Patents by Inventor Mike Hsinyih Chen

Mike Hsinyih Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Approach to provide high external voltage for flash memory erase
    Patent number: 6240027
    Abstract: In this invention external high voltages are connected to a chip containing a flash memory that are connected to selected cells to be erased. Internal pump circuits contained on the chip are turned off while the external voltages are used. The external voltages, a high negative voltage and a high positive voltage, are connected to gates and sources respectively of selected cells to be erased by a voltage control module. The external voltages are used during manufacture during program/erase operations to perform the erase function efficiently. The internal high voltage pump circuits are used to erase flash memory cells after being assembled on a circuit board by a user. Two level shifter circuits are disclosed that form a part of the voltage control module. The level shifter circuits apply voltages to the flash memory cells and provide voltages that select and deselect the cells for erasure.
    Type: Grant
    Filed: October 23, 2000
    Date of Patent: May 29, 2001
    Assignee: Aplus Flash Technology, Inc.
    Inventors: Peter Wung Lee, Fu-Chang Hsu, Mike Hsinyih Chen
  • Approach to provide high external voltage for flash memory erase
    Patent number: 6166961
    Abstract: In this invention external high voltages are connected to a chip containing a flash memory that are connected to selected cells to be erased. Internal pump circuits contained on the chip are turned off while the external voltages are used. The external voltages, a high negative voltage and a high positive voltage, are connected to gates and sources respectively of selected cells to be erased by a voltage control module. The external voltages are used during manufacture during program/erase operations to perform the erase function efficiently. The internal high voltage pump circuits are used to erase flash memory cells after being assembled on a circuit board by a user. Two level shifter circuits are disclosed that form a part of the voltage control module. The level shifter circuits apply voltages to the flash memory cells and provide voltages that select and deselect the cells for erasure.
    Type: Grant
    Filed: August 19, 1999
    Date of Patent: December 26, 2000
    Assignee: Aplus Flash Technology, Inc.
    Inventors: Peter Wung Lee, Fu-Chang Hsu, Mike Hsinyih Chen