Patents by Inventor Mike Jura

Mike Jura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Selective emitter nanowire array and methods of making same
    Patent number: 9136410
    Abstract: Another aspect of the present disclosure relates to a device including a substrate, having a top surface and a bottom surface; an array of nanowires having a base and a top surface, the base contacting the top surface of the substrate; a contacting structure including the same material as the substrate having a non-nanostructured surface of a dimension suitable for forming an electrical contact, located on the same side of the substrate as the array of silicon nanowires; wherein the contacting structure is doped with a greater impurity concentration than the nanowire array, thereby forming a selective emitter.
    Type: Grant
    Filed: August 24, 2014
    Date of Patent: September 15, 2015
    Assignee: Advanced Silicon Group, Inc.
    Inventors: Faris Modawar, Marcie R. Black, Brian Murphy, Jeff Miller, Mike Jura
  • Nanowire device with alumina passivation layer and methods of making same
    Patent number: 9099583
    Abstract: In one aspect, the present disclosure relates to a device including a silicon substrate, wherein at least a portion of the substrate surface can be a silicon nanowire array; and a layer of alumina covering the silicon nanowire array. In some embodiments, the device can be a solar cell. In some embodiments, the device can be a p-n junction. In some embodiments, the p-n junction can be located below the bottom surface the nanowire array.
    Type: Grant
    Filed: January 18, 2012
    Date of Patent: August 4, 2015
    Assignee: BANDGAP ENGINEERING, INC.
    Inventors: Faris Modawar, Marcie R. Black, Brian Murphy, Jeff Miller, Mike Jura
  • Process for forming silver films on silicon
    Patent number: 8945794
    Abstract: A process is provided for etching a silicon-containing substrate. In the process, the surface of the substrate is cleaned. A film of alumina is deposited on the cleaned substrate surface. A silver film is deposited above the film of alumina. An etchant comprising HF is contacted with the silver film.
    Type: Grant
    Filed: November 14, 2011
    Date of Patent: February 3, 2015
    Inventors: Faris Modawar, Jeff Miller, Mike Jura, Brian Murphy, Marcie Black, Brent A. Buchine
  • SELECTIVE EMITTER NANOWIRE ARRAY AND METHODS OF MAKING SAME
    Publication number: 20140366934
    Abstract: Another aspect of the present disclosure relates to a device including a substrate, having a top surface and a bottom surface; an array of nanowires having a base and a top surface, the base contacting the top surface of the substrate; a contacting structure including the same material as the substrate having a non-nanostructured surface of a dimension suitable for forming an electrical contact, located on the same side of the substrate as the array of silicon nanowires; wherein the contacting structure is doped with a greater impurity concentration than the nanowire array, thereby forming a selective emitter.
    Type: Application
    Filed: August 24, 2014
    Publication date: December 18, 2014
    Applicant: BANDGAP ENGINEERING, INC.
    Inventors: Faris MODAWAR, Marcie R. BLACK, Brian MURPHY, Jeff MILLER, Mike JURA
  • Selective emitter nanowire array and methods of making same
    Patent number: 8829485
    Abstract: Another aspect of the present disclosure relates to a device including a substrate, having a top surface and a bottom surface; an array of nanowires having a base and a top surface, the base contacting the top surface of the substrate; a contacting structure including the same material as the substrate having a non-nanostructured surface of a dimension suitable for forming an electrical contact, located on the same side of the substrate as the array of silicon nanowires; wherein the contacting structure is doped with a greater impurity concentration than the nanowire array, thereby forming a selective emitter.
    Type: Grant
    Filed: January 18, 2012
    Date of Patent: September 9, 2014
    Assignee: Bandgap Engineering, Inc.
    Inventors: Faris Modawar, Marcie R. Black, Brian Murphy, Jeff Miller, Mike Jura
  • METHOD OF ELECTRICALLY CONTACTING NANOWIRE ARRAYS
    Publication number: 20120181502
    Abstract: In one aspect, the present disclosure relates to a device including a substrate, having a top surface and a bottom surface; an array of nanowires having a base and a top surface, the base contacting the top surface of the substrate; a contacting structure having a non-nanostructured surface, having a top surface and a bottom surface, located on the same side of the substrate as the array of silicon nanowires; and an electrical contact in contact with the top surface of the contacting structure. In some embodiments, the device includes an aluminum oxide passivation layer over the array of nanowires. In some embodiments, the layer of aluminum oxide is deposited via atomic layer deposition.
    Type: Application
    Filed: January 18, 2012
    Publication date: July 19, 2012
    Applicant: Bandgap Engineering, Inc.
    Inventors: Faris Modawar, Marcie R. Black, Brian Murphy, Jeff Miller, Mike Jura
  • Nanowire Device with Alumina Passivation Layer and Methods of Making Same
    Publication number: 20120153250
    Abstract: In one aspect, the present disclosure relates to a device including a silicon substrate, wherein at least a portion of the substrate surface can be a silicon nanowire array; and a layer of alumina covering the silicon nanowire array. In some embodiments, the device can be a solar cell. In some embodiments, the device can be a p-n junction. In some embodiments, the p-n junction can be located below the bottom surface the nanowire array.
    Type: Application
    Filed: January 18, 2012
    Publication date: June 21, 2012
    Applicant: Bandgap Engineering, Inc.
    Inventors: Faris Modawar, Marcie R. Black, Brian Murphy, Jeff Miller, Mike Jura
  • SELECTIVE EMITTER NANOWIRE ARRAY AND METHODS OF MAKING SAME
    Publication number: 20120153251
    Abstract: Another aspect of the present disclosure relates to a device including a substrate, having a top surface and a bottom surface; an array of nanowires having a base and a top surface, the base contacting the top surface of the substrate; a contacting structure including the same material as the substrate having a non-nanostructured surface of a dimension suitable for forming an electrical contact, located on the same side of the substrate as the array of silicon nanowires; wherein the contacting structure is doped with a greater impurity concentration than the nanowire array, thereby forming a selective emitter.
    Type: Application
    Filed: January 18, 2012
    Publication date: June 21, 2012
    Applicant: Bandgap Engineering, Inc.
    Inventors: Faris Modawar, Marcie R. Black, Brian Murphy, Jeff Miller, Mike Jura
  • Process for forming silver films on silicon
    Publication number: 20120156585
    Abstract: A process is provided for etching a silicon-containing substrate. In the process, the surface of the substrate is cleaned. A film of alumina is deposited on the cleaned substrate surface. A silver film is deposited above the film of alumina. An etchant comprising HF is contacted with the silver film.
    Type: Application
    Filed: November 14, 2011
    Publication date: June 21, 2012
    Inventors: Faris Modawar, Jeff Miller, Mike Jura, Brian Murphy, Marcie Black, Brent A. Buchine