Patents by Inventor Mike Kellogg

Mike Kellogg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multi zone gas injection upper electrode system
    Patent number: 11594400
    Abstract: A plasma processing system includes a plasma chamber having a substrate support, and a multi-zone gas injection upper electrode disposed opposite the substrate support. An inner plasma region is defined between the upper electrode and the substrate support. The multi-zone gas injection upper electrode has a plurality of concentric gas injection zones. A confinement structure, which surrounds the inner plasma region, has an upper horizontal wall that interfaces with the outer electrode of the upper electrode. The confinement structure has a lower horizontal wall that interfaces with the substrate support, and includes a perforated confinement ring and a vertical wall that extends from the upper horizontal wall to the lower horizontal wall. The lower surface of the upper horizontal wall, an inner surface of the vertical wall, and an upper surface of the lower horizontal wall define a boundary of an outer plasma region, which surrounds the inner plasma region.
    Type: Grant
    Filed: April 10, 2020
    Date of Patent: February 28, 2023
    Assignee: Lam Research Corporation
    Inventors: Ryan Bise, Rajinder Dhindsa, Alexei Marakhtanov, Lumin Li, Sang Ki Nam, Jim Rogers, Eric Hudson, Gerardo Delgadino, Andrew D. Bailey, III, Mike Kellogg, Anthony de la Llera, Darrell Ehrlich
  • MULTI ZONE GAS INJECTION UPPER ELECTRODE SYSTEM
    Publication number: 20200243307
    Abstract: A plasma processing system includes a plasma chamber having a substrate support, and a multi-zone gas injection upper electrode disposed opposite the substrate support. An inner plasma region is defined between the upper electrode and the substrate support. The multi-zone gas injection upper electrode has a plurality of concentric gas injection zones. A confinement structure, which surrounds the inner plasma region, has an upper horizontal wall that interfaces with the outer electrode of the upper electrode. The confinement structure has a lower horizontal wall that interfaces with the substrate support, and includes a perforated confinement ring and a vertical wall that extends from the upper horizontal wall to the lower horizontal wall. The lower surface of the upper horizontal wall, an inner surface of the vertical wall, and an upper surface of the lower horizontal wall define a boundary of an outer plasma region, which surrounds the inner plasma region.
    Type: Application
    Filed: April 10, 2020
    Publication date: July 30, 2020
    Inventors: Ryan Bise, Rajinder Dhindsa, Alexei Marakhtanov, Lumin Li, Sang Ki Nam, Jim Rogers, Eric Hudson, Gerardo Delgadino, Andrew D. Bailey, III, Mike Kellogg, Anthony de la Llera, Darrell Ehrlich
  • Multi zone gas injection upper electrode system
    Patent number: 10622195
    Abstract: A system and method of plasma processing includes a plasma processing system including a plasma chamber and a controller coupled to the plasma chamber. The plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric gas injection zones.
    Type: Grant
    Filed: April 3, 2012
    Date of Patent: April 14, 2020
    Assignee: Lam Research Corporation
    Inventors: Ryan Bise, Rajinder Dhindsa, Alexei Marakhtanov, Lumin Li, Sang Ki Nam, Jim Rogers, Eric Hudson, Gerardo Delgadino, Andrew D. Bailey, III, Mike Kellogg, Anthony Dela Llera, Darrell Ehrlich
  • Plasma processing chamber with flexible symmetric RF return strap
    Patent number: 9508530
    Abstract: Chambers for processing semiconductor wafers are provided. One such chamber includes an electrostatic chuck having a surface for supporting a substrate. A ground assembly is provided that surrounds a periphery of the electrostatic chuck. The ground assembly includes a first annular part and a second annular part and a space between the first annular part and the second annular part. A conductive strap having flexibility is provided. The conductive strap is annular and has a curved cross-sectional shape with a first end and a second end. The conductive strap is disposed in the space such that the first is electrically connected to the first annular part and the second end is electrically connected to the second annular part. The curved cross-sectional shape has an opening that faces away from the electrostatic chuck when the annular conductive strap is in the space.
    Type: Grant
    Filed: November 21, 2012
    Date of Patent: November 29, 2016
    Assignee: Lam Research Corporation
    Inventors: Rajinder Dhindsa, Mike Kellogg
  • Dual zone temperature control of upper electrodes
    Patent number: 9263240
    Abstract: A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber.
    Type: Grant
    Filed: March 15, 2012
    Date of Patent: February 16, 2016
    Assignee: Lam Research Corporation
    Inventors: Alexei Marakhtanov, Rajinder Dhindsa, Ryan Bise, Lumin Li, Sang Ki Nam, Jim Rogers, Eric Hudson, Gerardo Delgadino, Andrew D. Bailey, III, Mike Kellogg, Anthony de la Llera
  • Multi Zone Gas Injection Upper Electrode System
    Publication number: 20130126486
    Abstract: A system and method of plasma processing includes a plasma processing system including a plasma chamber and a controller coupled to the plasma chamber. The plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric gas injection zones.
    Type: Application
    Filed: April 3, 2012
    Publication date: May 23, 2013
    Inventors: Ryan Bise, Rajinder Dhindsa, Alexei Marakhtanov, Lumin Li, Sang Ki Naw, Jim Rogers, Eric Hudson, Gerardo Delgadino, Andrew D. Bailey, III, Mike Kellogg, Anthony Dela Llera, Darrell Ehrlich
  • DUAL ZONE TEMPERATURE CONTROL OF UPPER ELECTRODES
    Publication number: 20130126476
    Abstract: A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber.
    Type: Application
    Filed: March 15, 2012
    Publication date: May 23, 2013
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Alexei Marakhtanov, Rajinder Dhindsa, Ryan Bise, Lumin Li, Sang Ki Nam, Jim Rogers, Eric Hudson, Gerardo Delgadino, Andrew D. Bailey, III, Mike Kellogg, Anthony de la LIera