Patents by Inventor Mike LaFleur

Mike LaFleur has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin film capacitor having multi-layer dielectric film including silicon dioxide and tantalum pentoxide
    Patent number: 6894335
    Abstract: A capacitor and a method of forming the same, one embodiment of which includes depositing a multi-layer dielectric film between first and second spaced-apart electrodes. The multi-layer dielectric film includes first and second layers that have differing roughness. The layer of the dielectric film having the least amount of roughness is disposed adjacent to the first electrode. After depositing the second layer of the dielectric film adjacent to the first layer, the second layer is annealed. An exemplary embodiment of the thin film capacitor forms the dielectric material from silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5).
    Type: Grant
    Filed: August 11, 2003
    Date of Patent: May 17, 2005
    Assignee: Technology IP Holdings, Inc.
    Inventor: Mike LaFleur
  • Thin film capacitor having multi-layer dielectric film including silicon dioxide and tantalum pentoxide
    Publication number: 20040113194
    Abstract: A capacitor and a method of forming the same, one embodiment of which includes depositing a multi-layer dielectric film between first and second spaced-apart electrodes. The multi-layer dielectric film includes first and second layers that have differing roughness. The layer of the dielectric film having the least amount of roughness is disposed adjacent to the first electrode. After depositing the second layer of the dielectric film adjacent to the first layer, the second layer is annealed. An exemplary embodiment of the thin film capacitor forms the dielectric material from silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5).
    Type: Application
    Filed: August 11, 2003
    Publication date: June 17, 2004
    Applicant: ALPINE MICROSYSTEMS, INC.
    Inventor: Mike LaFleur
  • Thin film capacitor having multi-layer dielectric film including silicon dioxide and tantalum pentoxide
    Patent number: 6620673
    Abstract: A capacitor and a method of forming the same, one embodiment of which includes depositing a multi-layer dielectric film between first and second spaced-apart electrodes. The multi-layer dielectric film includes first and second layers that have differing roughness. The layer of the dielectric film having the least amount of roughness is disposed adjacent to the first electrode. After depositing the second layer of the dielectric film adjacent to the first layer, the second layer is annealed. An exemplary embodiment of the thin film capacitor forms the dielectric material from silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5).
    Type: Grant
    Filed: March 8, 2002
    Date of Patent: September 16, 2003
    Assignee: Alpine Microsystems, Inc.
    Inventor: Mike LaFleur
  • THIN FILM CAPACITOR HAVING MULTI-LAYER DIELECTRIC FILM INCLUDING SILICON DIOXIDE AND TANTALUM PENTOXIDE
    Publication number: 20030170950
    Abstract: A capacitor and a method of forming the same, one embodiment of which includes depositing a multi-layer dielectric film between first and second spaced-apart electrodes. The multi-layer dielectric film includes first and second layers that have differing roughness. The layer of the dielectric film having the least amount of roughness is disposed adjacent to the first electrode. After depositing the second layer of the dielectric film adjacent to the first layer, the second layer is annealed. An exemplary embodiment of the thin film capacitor forms the dielectric material from silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5).
    Type: Application
    Filed: March 8, 2002
    Publication date: September 11, 2003
    Applicant: ALPINE MICROSYSTEMS, INC.
    Inventor: Mike LaFleur