Patents by Inventor Mike P. Violette

Mike P. Violette has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a lateral bipolar transistor
    Patent number: 6127236
    Abstract: A substantially concentric lateral bipolar transistor and the method of forming same. A base region is disposed about a periphery of an emitter region, and a collector region is disposed about a periphery of the base region to form the concentric lateral bipolar transistor of the invention. A gate overlies the substrate and at least a portion of the base region. At least one electrical contact is formed connecting the base and the gate, although a plurality of contacts may be formed. A further bipolar transistor is formed according to the following method of the invention. A base region is formed in a substrate and a gate region is formed overlying at least a portion of the base region. Emitter and collector terminals are formed on opposed sides of the base region. The gate is used as a mask during first and second ion implants.
    Type: Grant
    Filed: August 10, 1998
    Date of Patent: October 3, 2000
    Assignee: Micron Technology, Inc.
    Inventors: Kirk D. Prall, Mike P. Violette
  • Lateral bipolar transistor and apparatus using same
    Patent number: 5965923
    Abstract: A substantially concentric lateral bipolar transistor and the method of forming same. A base region is disposed about a periphery of an emitter region, and a collector region is disposed about a periphery of the base region to form the concentric lateral bipolar transistor of the invention. A gate overlies the substrate and at least a portion of the base region. At least one electrical contact is formed connecting the base and the gate, although a plurality of contacts may be formed. A further bipolar transistor is formed according to the following method of the invention. A base region is formed in a substrate and a gate region is formed overlying at least a portion of the base region. Emitter and collector terminals are formed on opposed sides of the base region. The gate is used as a mask during first and second ion implants.
    Type: Grant
    Filed: February 19, 1998
    Date of Patent: October 12, 1999
    Assignee: Micron Technology, Inc.
    Inventors: Kirk D. Prall, Mike P. Violette
  • Lateral bipolar transistor
    Patent number: 5945726
    Abstract: A substantially concentric lateral bipolar transistor having a base region that is disposed about a periphery of an emitter region, and a collector region that is disposed about a periphery of the base region to form the concentric lateral bipolar transistor of the invention. A gate overlies the substrate and at least a portion of the base region. At least one electrical contact is formed connecting the base and the gate, although a plurality of contacts may be formed. A further bipolar transistor is formed according to the following method of the invention. A base region is formed in a substrate and a gate region is formed overlying at least a portion of the base region. Emitter and collector terminals are formed on opposed sides of the base region. The gate is used as a mask during first and second ion implants.
    Type: Grant
    Filed: December 16, 1996
    Date of Patent: August 31, 1999
    Assignee: Micron Technology, Inc.
    Inventors: Kirk D. Prall, Mike P. Violette