Abstract: A method for cleaning a wafer with a drip nozzle being configured for use in a drip manifold that is oriented over a brush of a wafer cleaning system is provided. The drip nozzle has a first end and a second end with a passage defined there between where the passage includes a wall that extends longitudinally between the first end and the second end. An orifice is defined within the passage and located at the first end of the drip nozzle. The method includes inputting a fluid into the drip nozzle at an acute angle relative to a longitudinal extension of the wall and reflecting the fluid stream off an internal wall of the drip nozzle at least twice in a direction that is toward the second end. The method further includes outputting at least one substantially uniform drop from the second end of the passage.

Abstract: A method and a system are provided for cleaning a surface of a wafer. The method starts by scrubbing the surface of the wafer with a cleaning brush that applies a chemical solution to the surface of the wafer. In one example, the cleaning brush implements a through the brush (TTB) technique to apply the chemicals. The scrubbing is generally performed in a brush box, with a top cleaning brush and a bottom cleaning brush. The top cleaning brush is then removed from contact with the surface of the wafer. The chemical concentration in the top brush may be maintained at substantially the same concentration that was in the brush during the scrubbing operation. Next, a flow of water (preferably de-ionized water) is delivered to the surface of the wafer. The delivery of water is preferably configured to remove substantially all of the chemical solution from the surface of the wafer before proceeding to a next cleaning operation.

Abstract: A method and apparatus for qualifying a polishing pad used in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes at least one qualifying member including at least one collimated hole structure, wherein the collimated hole structure forms multiple channels within the qualifying member. The method includes providing at least one qualifying member formed with at least one capillary tube array, wherein the capillary tube array forms multiple channels within the qualifying member, pressing the qualifying member against the polishing pad, and moving the qualifying member along the polishing pad along a trajectory to simulate the polishing of a semiconductor wafer.

Abstract: A drip manifold having drip nozzles configured to form controlled droplets is provided for use in wafer cleaning systems. The drip manifold includes a plurality of drip nozzles that are secured to the drip manifold. Each of the plurality of drip nozzles has a passage defined between a first end and a second end. A sapphire orifice is defined within the passage and is located at the first end of the drip nozzle. The sapphire orifice is angled to produce a fluid stream that is reflected within the passage and toward the second end to form one or more uniform drops over a brush.

Abstract: A method for preparing a semiconductor wafer surface is provided which includes providing a plurality of source inlets and a plurality of source outlets and applying isopropyl alcohol (IPA) vapor gas through the plurality of source inlets to the wafer surface when the plurality of source inlets and outlets are in close proximity to the wafer surface. The method also includes applying a fluid through the plurality of source inlets to the wafer surface while applying the IPA vapor gas, and removing the applied IPA vapor gas and fluid from the wafer surface through the plurality of source outlets.

Abstract: Systems and apparatus for evaluating the effectiveness of wafer drying techniques are provided. The systems and apparatus include a laser or any other source configured to apply light radiation to the surface of a substrate that has been rinsed with a solution containing an analytically detectable compound prior to a drying process. Any residue of the analytically detectable compound is excited by the source, and the resulting energy is imaged with a confocal microscope or similar device to identify regions of the surface of the substrate of ineffective drying.

Abstract: A system is provided for use in semiconductor wafer cleaning operations. The cleaning system has a top cap and a bottom cap. The top cap seals on a top surface contact ring of a wafer, and the bottom cap seals on a bottom surface contact ring of the wafer. The wafer is held between the top cap and the bottom cap. An edge clean roller is used for cleaning an edge of the wafer. A drive roller is configured to rotate the wafer, the top cap, and the bottom cap. The edge clean roller rotates at a first velocity and the drive roller rotates at a second velocity so as to facilitate an edge cleaning of the wafer by the edge clean roller.

Abstract: A method for preparing a semiconductor wafer surface is provided which includes providing a plurality of source inlets and a plurality of source outlets and applying isopropyl alcohol (WPA) vapor gas through the plurality of source inlets to the wafer surface when the plurality of source inlets and outlets are in close proximity to the wafer surface. The method also includes applying a fluid through the plurality of source inlets to the wafer surface while applying the IPA vapor gas, and removing the applied IPA vapor gas and fluid from the wafer surface through the plurality of source outlets.

Abstract: A brush core and the method for making a brush core for use in substrate scrubbing are provided. The substrate can be any substrate that may need to undergo a scrubbing operation to complete a cleaning operation, etching operation, or other preparation. For instance, the substrate can be a semiconductor wafer, a disk, or any other type of work piece that will benefit from a brush core that can deliver uniform controlled amounts of fluid through the brush along an entire length of the brush core. The brush core is defined by a tubular core having a length that extends between a first end and a second end. The first end has an opening into a bore that is defined through a middle of the tubular core and extends along an inner length of the tubular core. A first plurality of holes are oriented along a plurality of first lines that extend in the direction of the length of the tubular core, and each of the first plurality of holes define paths to the bore of the tubular core.

Abstract: A method is provided for cleaning a surface of a semiconductor wafer after a CMP operation. In one example, an improved cleaning chemical (ICC) is applied to the surface of the wafer. The ICC is configured to transform a copper film on the surface of the wafer into a water soluble form. The wafer surface is scrubbed. The wafer is then rinsed with a liquid. The scrubbing and the rinsing are configured to remove a controlled amount of the water soluble copper from the surface of the wafer and the brush, wherein the applying, the scrubbing, and the rinsing are performed in a brush box.

Abstract: A cover to be disposed over a substrate processing apparatus is provided. The cover includes a material capable of being tuned between an opaque state and a transparent state. Being tuned closer to the opaque state limits an amount of light capable of passing through the tunable cover and into the substrate processing apparatus during substrate processing. Being tuned closer to the transparent state allows viewing into the substrate processing apparatus without removing the cover.

Abstract: Methods for evaluating advanced wafer drying techniques are provided. An exemplary method includes applying a solution containing an analytically detectable compound to a substrate prior to a desired drying operation. The method then provides for the inspection and analysis of the substrate for any residue of the analytically detectable compound, the presence of which identifies any regions of the substrate where the drying operation is ineffective. The drying operation is selected, changed, or modified according to the results of the evaluation.

Abstract: A method and apparatus for controlling galvanic corrosion effects on a single-wafer cleaning system are provided. In one embodiment, a method for minimizing galvanic corrosion effects in a single-wafer cleaning system is provided. The method initiates with applying a cleaning chemistry containing corrosion inhibitors to a surface of a wafer. Then, the surface of the wafer is exposed to the cleaning chemistry for a period of time. Next, a concentration gradient at an interface of the cleaning chemistry and the surface of the wafer is refreshed. Then, a rinsing agent and a drying agent are applied simultaneously to remove the cleaning chemistry, wherein the drying agent dries the surface of the wafer prior to a concentration of the corrosion inhibitors being diluted to a level insufficient to provide corrosion protection.

Abstract: A wafer cleaner and dryer to be used in wafer manufacturing operations is provided. The wafer cleaner and dryer has a proximity head which moves toward a wafer surface to complete either a cleaning or a drying operation. The proximity head includes a plurality of source inlets where the plurality of source inlets generates a first pressure on a fluid film present on the wafer surface when the proximity head is in a first position that is close to the wafer surface. The proximity head also contains a plurality of source outlets which introduces a second pressure on the fluid film present on the wafer surface when the proximity head is in the first position. The first pressure generated by the plurality of source inlets is greater than the second pressure created by the plurality of source outlets so as to create a pressure difference where the pressure difference causes removal of the fluid film from the wafer surface.

Abstract: A method and apparatus for qualifying a polishing pad used in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes at least one qualifying member including at least one collimated hole structure, wherein the collimated hole structure forms multiple channels within the qualifying member. The method includes providing at least one qualifying member formed with at least one capillary tube array, wherein the capillary tube array forms multiple channels within the qualifying member, pressing the qualifying member against the polishing pad, and moving the qualifying member along the polishing pad along a trajectory to simulate the polishing of a semiconductor wafer.

Abstract: A method and apparatus for qualifying a polishing pad used in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes at least one qualifying member including at least one collimated hole structure, wherein the collimated hole structure forms multiple channels within the qualifying member. The method includes providing at least one qualifying member formed with at least one capillary tube array, wherein the capillary tube array forms multiple channels within the qualifying member, pressing the qualifying member against the polishing pad, and moving the qualifying member along the polishing pad along a trajectory to simulate the polishing of a semiconductor wafer.

Abstract: A method and a system are provided for cleaning a surface of a wafer, The method starts by scrubbing the surface of the wafer with a cleaning brush that applies a chemical solution to the surface of the wafer. In one example, the cleaning brush implements a through the brush (TTB) technique to apply the chemicals. The scrubbing is generally performed in a brush box, with a top cleaning brush and a bottom cleaning brush. The top cleaning brush is then removed from contact with the surface of the wafer. The chemical concentration in the top brush may be maintained at substantially the same concentration that was in the brush during the scrubbing operation. Next, a flow of water (preferably de-ionized water) is delivered to the surface of the wafer. The delivery of water is preferably configured to remove substantially all of the chemical solution from the surface of the wafer before proceeding to a next cleaning operation.

Abstract: A method and system are provided for reducing and eliminating photo-assisted copper corrosion during a wafer cleaning process. In one example, a method is provided for making a composite material for the cover of a wafer cleaning system. A first transparent layer is formed. A transparency tunable layer is formed over the first transparent layer. Electrical connections are defined between a first portion and a second portion of the transparency tunable layer. And a second transparent layer is formed over the transparency tunable layer.

Abstract: Chemical mechanical polishing systems and methods are disclosed. The system includes a polishing pad that is configured to move from a first point to a second point. A carrier is also included and is configured to hold a substrate to be polished over the polishing pad. The carrier is designed to apply the substrate to the polishing pad in a polish location that is between the first point and the second point. A first sensor is located at the first point and oriented so as to sense an IN temperature of the polishing pad, and a second sensor is located a the second point and oriented so as to sense an OUT temperature of the polishing pad. The sensing of the IN and OUT temperatures is configured to produce a temperature differential that allows monitoring the process state and the state of the wafer surface for purposes of switching the process steps while processing wafers by chemical mechanical planarization.

Abstract: Chemical mechanical polishing systems and methods are disclosed. The system includes a polishing pad that is configured to move from a first point to a second point. A carrier is also included and is configured to hold a substrate to be polished over the polishing pad. The carrier is designed to apply the substrate to the polishing pad in a polish location that is between the first point and the second point. A first sensor is located at the first point and oriented so as to sense an IN temperature of the polishing pad, and a second sensor is located a the second point and oriented so as to sense an OUT temperature of the polishing pad. The sensing of the IN and OUT temperatures is configured to produce a temperature differential that allows monitoring the process state and the state of the wafer surface for purposes of switching the process steps while processing wafers by chemical mechanical planarization.