Abstract: An optoelectronic computing system includes a first semiconductor die having a photonic integrated circuit (PIC) and a second semiconductor die having an electronic integrated circuit (EIC). The PIC includes optical waveguides, in which input values are encoded on respective optical signals carried by the optical waveguides. The PIC includes an optical copying distribution network having optical splitters. The PIC includes an array of optoelectronic circuitry sections, each receiving an optical wave from one of the output ports of the optical copying distribution network, and each optoelectronic circuitry section includes: at least one photodetector detecting at least one optical wave from the optoelectronic operation. The EIC includes electrical input ports receiving respective electrical values.

Abstract: A design structure embodied in a machine readable medium used in a design process includes an interleaved voltage-controlled oscillator, including a ring circuit of main logic inverter gates; a plurality of delay elements connected in parallel with a selected sequence of the main logic inverter gates; wherein each delay element comprises a feedforward section, comprising controls for regulating signal transmission through feedforward elements responsive to one or more control voltages; and a proportional section for regulating signal transmission through at least one logic inverter gate; at least one temperature compensation circuit responsive to a compensating voltage input that is proportional to temperature; an electronic circuit in communication with the temperature compensation circuit and configured to provide a voltage signal responsive to temperature; an amplifier in connection with the electronic circuit to amplify the voltage signal; and a DC offset generator configured to adjust the voltage of the

Abstract: An interleaved voltage-controlled oscillator (VCO) is disclosed. The VCO includes a ring circuit comprising a series connection of main logic inverter gates, a plurality of delay elements connected in parallel with a selected sequence of the main logic inverter gates, at least one temperature compensation circuit comprising a logic inverter gate in series connection with one or more field effect transistors, the field effect transistor responsive to a compensating voltage input that is proportional to temperature, and an electronic circuit in signal communication with the at least one temperature compensation circuit and configured to provide a voltage signal responsive to temperature. Each delay element includes a feedforward section, comprising controls for regulating signal transmission through feedforward elements responsive to one or more control voltages, and a proportional section, comprising controls for regulating signal transmission through at least one logic inverter gate.

Abstract: An interleaved voltage-controlled oscillator (VCO) is disclosed. The VCO includes a ring circuit comprising a series connection of main logic inverter gates, a plurality of delay elements connected in parallel with a selected sequence of the main logic inverter gates, at least one temperature compensation circuit comprising a logic inverter gate in series connection with one or more field effect transistors, the field effect transistor responsive to a compensating voltage input that is proportional to temperature, and an electronic circuit in signal communication with the at least one temperature compensation circuit and configured to provide a voltage signal responsive to temperature. Each delay element includes a feedforward section, comprising controls for regulating signal transmission through feedforward elements responsive to one or more control voltages, and a proportional section, comprising controls for regulating signal transmission through at least one logic inverter gate.

Abstract: A design structure embodied in a machine readable medium used in a design process includes an interleaved voltage-controlled oscillator, including a ring circuit of main logic inverter gates; a plurality of delay elements connected in parallel with a selected sequence of the main logic inverter gates; wherein each delay element comprises a feedforward section, comprising controls for regulating signal transmission through feedforward elements responsive to one or more control voltages; and a proportional section for regulating signal transmission through at least one logic inverter gate; at least one temperature compensation circuit responsive to a compensating voltage input that is proportional to temperature; an electronic circuit in communication with the temperature compensation circuit and configured to provide a voltage signal responsive to temperature; an amplifier in connection with the electronic circuit to amplify the voltage signal; and a DC offset generator configured to adjust the voltage of the

Abstract: An interleaved voltage-controlled oscillator (VCO) is disclosed. The VCO includes a ring circuit comprising a series connection of main logic inverter gates, a plurality of delay elements connected in parallel with a selected sequence of the main logic inverter gates, at least one temperature compensation circuit comprising a logic inverter gate in series connection with one or more field effect transistors, the field effect transistor responsive to a compensating voltage input that is proportional to temperature, and an electronic circuit in signal communication with the at least one temperature compensation circuit and configured to provide a voltage signal responsive to temperature. Each delay element includes a feedforward section, comprising controls for regulating signal transmission through feedforward elements responsive to one or more control voltages, and a proportional section, comprising controls for regulating signal transmission through at least one logic inverter gate.

Abstract: An interleaved voltage-controlled oscillator (VCO) is disclosed. The VCO includes a ring circuit comprising a series connection of main logic inverter gates, a plurality of delay elements connected in parallel with a selected sequence of the main logic inverter gates, at least one temperature compensation circuit comprising a logic inverter gate in series connection with one or more field effect transistors, the field effect transistor responsive to a compensating voltage input that is proportional to temperature, and an electronic circuit in signal communication with the at least one temperature compensation circuit and configured to provide a voltage signal responsive to temperature. Each delay element includes a feedforward section, comprising controls for regulating signal transmission through feedforward elements responsive to one or more control voltages, and a proportional section, comprising controls for regulating signal transmission through at least one logic inverter gate.

Abstract: An interleaved voltage-controlled oscillator (VCO) is disclosed. The VCO includes a ring circuit comprising a series connection of main logic inverter gates, a plurality of delay elements connected in parallel with a selected sequence of the main logic inverter gates, at least one temperature compensation circuit comprising a logic inverter gate in series connection with one or more field effect transistors, the field effect transistor responsive to a compensating voltage input that is proportional to temperature, and an electronic circuit in signal communication with the at least one temperature compensation circuit and configured to provide a voltage signal responsive to temperature. Each delay element includes a feedforward section, comprising controls for regulating signal transmission through feedforward elements responsive to one or more control voltages, and a proportional section, comprising controls for regulating signal transmission through at least one logic inverter gate.

Abstract: An interleaved voltage-controlled oscillator (VCO) is disclosed. The VCO includes a ring circuit comprising a series connection of main logic inverter gates, a plurality of delay elements connected in parallel with a selected sequence of the main logic inverter gates, at least one temperature compensation circuit comprising a logic inverter gate in series connection with one or more field effect transistors, the field effect transistor responsive to a compensating voltage input that is proportional to temperature, and an electronic circuit in signal communication with the at least one temperature compensation circuit and configured to provide a voltage signal responsive to temperature. Each delay element includes a feedforward section, comprising controls for regulating signal transmission through feedforward elements responsive to one or more control voltages, and a proportional section, comprising controls for regulating signal transmission through at least one logic inverter gate.

Abstract: Field effect transistor integrated circuits include field effect transistors in an integrated circuit substrate, such as a semiconductor substrate. A first one of the field effect transistors has a body effect that is substantially lower than that of a second one of the field effect transistors during operation of the first and second field effect transistors. The field effect transistors may be interconnected to form a circuit, and the body effect of the first field effect transistor is substantially lower than that of the second field effect transistor during operation of the circuit.

Abstract: A field effect transistor includes a strained silicon channel in a substrate, source/drain regions in the substrate at opposite ends of the strained silicon channel, a gate insulating layer on the strained silicon channel, and a gate on the gate insulating layer. The doping of the strained silicon channel, the doping of the substrate and/or the depth of the strained silicon channel are configured to produce nearly zero vertical electric field in the gate insulating layer and in the strained silicon channel surface at a threshold voltage of the field effect transistor. Moreover, the gate is configured to provide a gate work function that is close to a mid-bandgap of silicon. Accordingly, a Fermi-FET with a strained silicon channel and a gate layer with a mid-bandgap work function are provided. Related fabrication methods using epitaxial growth also are described.