Abstract: A venting appliance lid includes an outer sealing section having a rim and a shoulder defining a central opening and a skirt; a center cap having a flange and a cup, wherein in a fully inserted position the flange rests on the shoulder; wherein an inner diameter of the skirt is separated by a gap from an outer diameter of the cup; the skirt having an expansion notch and the cup having a locking tab, wherein the center cap is rotatable relative to the outer sealing section to align the locking tab with the expansion notch and wherein the expansion notch allows the locking tab to travel a vertical distance equal to the height of the expansion notch; and wherein pressure on the center cap raises the center cap to form a vent path that is open to atmosphere while preventing the center cap from being ejected.

Abstract: Semiconductor devices having a buried layer and methods for forming the same are disclosed. In an exemplary method, a hard mask layer can be provided on a semiconductor substrate. The hard mask layer can have a plurality of through-openings. A plurality of deep trenches can be formed in the semiconductor substrate using the hard mask layer as a mask. A bottom of each of the plurality of deep trenches in the semiconductor substrate can be doped to form a plurality of heavily-doped regions. One or more of the plurality of heavily-doped regions can be connected to form the buried layer in the semiconductor substrate. There is thus no need to use an epitaxial process to form active regions. In addition, lateral isolation structures can be simultaneously formed in the semiconductor substrate.

Abstract: Semiconductor devices having a buried layer and methods for forming the same are disclosed. In an exemplary method, a hard mask layer can be provided on a semiconductor substrate. The hard mask layer can have a plurality of through-openings. A plurality of deep trenches can be formed in the semiconductor substrate using the hard mask layer as a mask. A bottom of each of the plurality of deep trenches in the semiconductor substrate can be doped to form a plurality of heavily-doped regions. One or more of the plurality of heavily-doped regions can be connected to form the buried layer in the semiconductor substrate. There is thus no need to use an epitaxial process to form active regions. In addition, lateral isolation structures can be simultaneously formed in the semiconductor substrate.