Patents by Inventor MIKE TANG

MIKE TANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having buried layer and method for forming the same
    Patent number: 9159785
    Abstract: Semiconductor devices having a buried layer and methods for forming the same are disclosed. In an exemplary method, a hard mask layer can be provided on a semiconductor substrate. The hard mask layer can have a plurality of through-openings. A plurality of deep trenches can be formed in the semiconductor substrate using the hard mask layer as a mask. A bottom of each of the plurality of deep trenches in the semiconductor substrate can be doped to form a plurality of heavily-doped regions. One or more of the plurality of heavily-doped regions can be connected to form the buried layer in the semiconductor substrate. There is thus no need to use an epitaxial process to form active regions. In addition, lateral isolation structures can be simultaneously formed in the semiconductor substrate.
    Type: Grant
    Filed: September 7, 2013
    Date of Patent: October 13, 2015
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventors: Jiwei He, Gangning Wang, Shannon Pu, Mike Tang, Amy Feng
  • SEMICONDUCTOR DEVICE HAVING BURIED LAYER AND METHOD FOR FORMING THE SAME
    Publication number: 20140077342
    Abstract: Semiconductor devices having a buried layer and methods for forming the same are disclosed. In an exemplary method, a hard mask layer can be provided on a semiconductor substrate. The hard mask layer can have a plurality of through-openings. A plurality of deep trenches can be formed in the semiconductor substrate using the hard mask layer as a mask. A bottom of each of the plurality of deep trenches in the semiconductor substrate can be doped to form a plurality of heavily-doped regions. One or more of the plurality of heavily-doped regions can be connected to form the buried layer in the semiconductor substrate. There is thus no need to use an epitaxial process to form active regions. In addition, lateral isolation structures can be simultaneously formed in the semiconductor substrate.
    Type: Application
    Filed: September 7, 2013
    Publication date: March 20, 2014
    Applicant: Semiconductor Manufacturing International Corp.
    Inventors: JIWEI HE, GANGNING WANG, SHANNON PU, MIKE TANG, AMY FENG