Abstract: A die screening system may receive die-resolved metrology data for a population of dies on one or more samples from the one or more in-line metrology tools after one or more fabrication steps, where the die-resolved metrology data includes images generated using one or more measurement configurations of the one or more in-line metrology tools. In this way, the die-resolved metrology data provides many measurement channels per die, where a particular measurement channel includes data from a particular pixel of a particular image. The controller may then generate screening data for the population of dies from the die-resolved metrology data, where the screening data includes a subset of the plurality of measurement channels of the die-resolved metrology data, and screen the plurality of dies into two or more disposition classes including at least outlier dies based on variability in the screening data.

Abstract: Automatically identifying defect-based test coverage gaps in semiconductor devices includes determining a plurality of apparent killer defects on one or more semiconductor devices with a plurality of semiconductor dies based on characterization measurements of the one or more semiconductor devices acquired by one or more semiconductor fabrication subsystems, determining at least one semiconductor die which passes at least one test based on test measurements acquired by one or more test tool subsystems, correlate the characterization measurements with the test measurements to determine at least one apparent killer defect on the at least one semiconductor die which passes the at least one test, and determining one or more gap areas on the one or more semiconductor devices for defect-based test coverage based on the at least one apparent killer defect on the at least one semiconductor die which passes the at least one test.

Abstract: An inspection system may include a controller communicatively coupled to one or more in-line sample analysis tools including, but not limited to, an inspection tool or a metrology tool. The controller may identify defects in a population of dies based on data received from at least one of the one or more in-line sample analysis tools, assign weights to the identified defects indicative of predicted impact of the identified defects on reliability of the dies using a weighted defectivity model, generate defectivity scores for the dies in the population by aggregating the weighted defects in the respective dies in the population, and determine a set of outlier dies based on the defectivity scores for the dies in the population, wherein at least some of the set of outlier dies are isolated from the population.

Abstract: An inspection system may include a controller communicatively coupled to one or more in-line sample analysis tools including, but not limited to, an inspection tool or a metrology tool. The controller may identify defects in a population of dies based on data received from at least one of the one or more in-line sample analysis tools, assign weights to the identified defects indicative of predicted impact of the identified defects on reliability of the dies using a weighted defectivity model, generate defectivity scores for the dies in the population by aggregating the weighted defects in the respective dies in the population, and determine a set of outlier dies based on the defectivity scores for the dies in the population, wherein at least some of the set of outlier dies are isolated from the population.

Abstract: Methods that include acquiring aerial images of a reticle for different values of a member of a set of lithographic variables are provided. One method also includes determining a presence of an anomaly in a design pattern of the reticle by comparing at least one pair of the aerial images corresponding to at least two of the different values. A different method includes comparing at least one pair of the aerial images corresponding to at least two of the different values and determining an area on the reticle where a lithography process using the reticle is most susceptible to failure based on the results of the comparison. Another embodiment includes determining a presence of transient repeating defects on the reticle by subtracting non-transient defects from the aerial images and comparing at least one pair of the aerial images corresponding to at least two of the different values.

Abstract: The invention is a method of determining the presence of an anomaly in qualifying a pattern, patterning process, or patterning apparatus used in the fabrication of microlithographic patterns. A preferred implementation of the method qualifies incoming reticles and process conditions on test wafers to maximize the available usable process window for a given reticle exposure tool combination. Practicing this method on test wafers enables the identification of spatial areas where a process will fail first and candidate regions for carrying out defect inspection and metrology. Other preferred implementations of the method qualify masks, reticles, or other patterns characterized by data bases on which are stored image data acquired by practice of aerial image measurement system (AIMS) or design rule checking (DRC) techniques.

Abstract: Methods that include acquiring aerial images of a reticle for different values of a member of a set of lithographic variables are provided. One method also includes determining a presence of an anomaly in a design pattern of the reticle by comparing at least one pair of the aerial images corresponding to at least two of the different values. A different method includes comparing at least one pair of the aerial images corresponding to at least two of the different values and determining an area on the reticle where a lithography process using the reticle is most susceptible to failure based on the results of the comparison. Another embodiment includes determining a presence of transient repeating defects on the reticle by subtracting non-transient defects from the aerial images and comparing at least one pair of the aerial images corresponding to at least two of the different values.

Abstract: The invention is a method of determining the presence of an anomaly in qualifying a pattern, patterning process, or patterning apparatus used in the fabrication of microlithographic patterns. A preferred implementation of the method qualifies incoming reticles and process conditions on test wafers to maximize the available usable process window for a given reticle exposure tool combination. Practicing this method on test wafers enables the identification of spatial areas where a process will fail first and candidate regions for carrying out defect inspection and metrology. Other preferred implementations of the method qualify masks, reticles, or other patterns characterized by data bases on which are stored image data acquired by practice of aerial image measurement system (AIMS) or design rule checking (DRC) techniques.