Patents by Inventor Mike Watson Goodwin

Mike Watson Goodwin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7531398
    Abstract: A semiconductor device is fabricated having a metal stress inducing layer that facilitates channel mobility. A gate dielectric layer is formed over a semiconductor substrate. The metal stress inducing layer is formed over the gate dielectric layer. The metal stress inducing layer has a selected conductivity type and is formed and composed to yield a select stress amount and type. A gate layer, such as a polysilicon layer, is formed over the metal stress inducing layer. The gate layer and the metal stress inducing layer are patterned to define gate structures.
    Type: Grant
    Filed: October 19, 2006
    Date of Patent: May 12, 2009
    Assignee: Texas Instruments Incorporated
    Inventors: Zhibo Zhang, Cloves Rinn Cleavelin, Michael Francis Pas, Stephanie Watts Butler, Mike Watson Goodwin, Satyavolu Srinivas Papa Rao
  • Publication number: 20080096338
    Abstract: A semiconductor device is fabricated having a metal stress inducing layer that facilitates channel mobility. A gate dielectric layer is formed over a semiconductor substrate. The metal stress inducing layer is formed over the gate dielectric layer. The metal stress inducing layer has a selected conductivity type and is formed and composed to yield a select stress amount and type. A gate layer, such as a polysilicon layer, is formed over the metal stress inducing layer. The gate layer and the metal stress inducing layer are patterned to define gate structures.
    Type: Application
    Filed: October 19, 2006
    Publication date: April 24, 2008
    Inventors: Zhibo Zhang, Cloves Rinn Cleavelin, Michael Francis Pas, Stephanie Watts Butler, Mike Watson Goodwin, Satyavolu Srinivas Papa Rao