Abstract: A crucible for growing silicon ingots may include a vessel having a bottom wall and side walls surrounding an inner portion of the vessel. A coating layer is applied to inner surfaces of the bottom wall and the side walls, the coating layer including a temperature-resistant material compatible with ingot growth from molten silicon such as silicon nitride. A patterned protrusion layer is applied at the inner surface of the bottom wall, which includes a matrix consisting of a temperature-resistant material compatible with ingot growth from molten silicon such as silicon nitride. Furthermore, the patterned protrusion layer includes particles of a nucleation enhancing material such as silica, the particles locally protruding from the matrix. The protruding particles may generate a pattern of multiple nucleation points during crystal growth of the ingot. Due to such multiple nucleation points, a dislocation density defect propagation towards a top may be reduced during crystal growth such that, e.g.

Abstract: There is provided a computing engine (10) for use in simulating a complex system (20), controlling the complex system (20), or a combination of simulating and controlling the complex system (20), wherein the computing engine (10) includes a data processing arrangement (40) that is operable to execute one or more program instructions. The computing engine (10) includes a plurality of computational modules (50) that are operable to exchange data therebetween via a data exchange arrangement (60). The computational modules (50) are operable to execute one or more computational functions therein on data received at the computational modules (50) and to generate corresponding output data (R). The computational modules (50) are operable to receive, for input data to their one or more computational functions, at least one of: user input values, sensed data from the complex system (20).

Abstract: A test socket includes a test base and at least one electrical connection module. The at least one electrical connection module is detachably mounted in the test base and each one of the at least one electrical connection module has a frame and an electrically conducting element. The frame has a receiving hole for receiving and testing an IC. The electrically conducting element is detachably mounted on a bottom of the frame. After long time of use, the ineffective electrical connection module or electrically conducting element thereof can be rapidly and easily replaced with a new or an effective one by directly detaching the electrical connection module from the test base. Therefore, idle time or dead time of test apparatuses is shortened and test efficiency is enhanced.