Patents by Inventor Mikelis Nils Svilans

Mikelis Nils Svilans has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6915030
    Abstract: An optical spectrum analyzer for analyzing at least n wavelengths of light is disclosed having a tunable filter with an input port and an output port and a periodic output response with a free spectral range FSR and having a bandwidth B. An AWG is optically coupled to receive light from the output port; and for distributing the light spatially at other locations in a wavelength dependent manner. Optically coupled with the AWG are m detectors for detecting wavelength or channel information. The number of detectors, m is less than n when a single detector is associated with a single channel; and m is less than 2n when two detectors are associated with a single channel.
    Type: Grant
    Filed: November 13, 2003
    Date of Patent: July 5, 2005
    Inventors: Mikelis Nils Svilans, Philip Duggan, Paul Colbourne
  • Publication number: 20040096151
    Abstract: An optical spectrum analyzer for analyzing at least n wavelengths of light is disclosed having a tunable filter with an input port and an output port and a periodic output response with a free spectral range FSR and having a bandwidth B. An AWG is optically coupled to receive light from the output port; and for distributing the light spatially at other locations in a wavelength dependent manner. Optically coupled with the AWG are m detectors for detecting wavelength or channel information. The number of detectors, m is less than n when a single detector is associated with a single channel; and m is less than 2n when two detectors are associated with a single channel.
    Type: Application
    Filed: November 13, 2003
    Publication date: May 20, 2004
    Inventors: Mikelis Nils Svilans, Philip Duggan, Paul Colbourne
  • Patent number: 6556599
    Abstract: An external cavity laser comprises a light source unit, preferably comprising a semiconductor light source having internal optical gain and a collimating lens, for supplying substantially collimated light to a retroreflector via an angle-tuned filter extending across an optical axis of the light source. The retroreflector is positioned so as to receive light from the light source via the angle-tuned filter and reflect the light via the angle-tuned filter back to the light source. The retroreflector may comprise a quarter pitch graded-index (GRIN) lens having a proximal end surface oriented towards the light source and a distal end surface opposite thereto, with a mirror provided on the distal end surface, preferably as a high-reflectance coating. The angle-tuned filter may be attached to the proximal end surface of the GRIN lens, preferably as a coating. The GRIN lens may be tilted in order to vary the angle of the filter relative to the optical axis and hence the wavelength.
    Type: Grant
    Filed: October 17, 2000
    Date of Patent: April 29, 2003
    Assignee: Bookham Technology plc
    Inventor: Mikelis Nils Svilans
  • Patent number: 6222200
    Abstract: A photodetector has an extended wavelength range combined with high responsivity and reliability. It includes an active region having alternating compressive and tensile strain layers arranged so that the total effective strain of the active region is balanced. The thickness of each layer is limited so that a product of a thickness by strain is not exceeding about 20% nm to avoid formation of crystalline defects. The layers with higher optical absorption constant are made thicker than the layers with lower absorption constant to provide the required responsivity of the detector. In one embodiment, the active region is formed on InP substrate and includes alternating 0.25% compressive strain and 1.03% tensile strain layers of InGaAs composition, the compressive strain layers being approximately four times thicker. In another embodiment interfaces between the layers are compositionally graded. The described structure of the active region may be used in various types of photodetectors, e.g.
    Type: Grant
    Filed: April 19, 1999
    Date of Patent: April 24, 2001
    Assignee: Nortel Networks Limited
    Inventor: Mikelis Nils Svilans