Patents by Inventor Mikhail Anikin

Mikhail Anikin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus and process for the formation of monocrystalline silicon carbide (SiC) on a nucleus
    Patent number: 6113692
    Abstract: The invention relates to an apparatus for forming SiC on a nucleus. The apparatus comprises a first enclosure (100) defined by at least one wall (102, 110, 112) and able to receive a SiC nucleus (122), a SiC powder reservoir (118) and means (120) for heating the enclosure and, according to the invention, the wall (102, 110, 112) is essentially covered by at least one SiC layer (116).
    Type: Grant
    Filed: March 25, 1997
    Date of Patent: September 5, 2000
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Claude Jaussaud, Roland Madard, Mikhail Anikin, Isabelle Garcon