Patents by Inventor Mikhail Gaevski
Mikhail Gaevski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230416095Abstract: Methods permit the growth of two or more nanomaterials in a common process chamber in the same batch run, either simultaneously or sequentially, using one or a combination of CVD, CVI, or other techniques. The methods described can be beneficial for forming nanosilicon-containing nanocarbon structures suitable for use as a battery anode material.Type: ApplicationFiled: June 20, 2023Publication date: December 28, 2023Inventors: Maxim S. Shatalov, Samuel J. Wright, Mikhail Gaevski
-
Patent number: 11791438Abstract: A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.Type: GrantFiled: March 11, 2021Date of Patent: October 17, 2023Assignee: Sensor Electronic Technology, Inc.Inventors: Mikhail Gaevski, Alexander Dobrinsky, Maxim S. Shatalov, Michael Shur
-
Publication number: 20230103072Abstract: A 1.8-times improved light extraction efficiency (LEE) is reported under DC test conditions for truncated cone AlGaN DUV micropixel LEDs when the pixel size was reduced from 90 to 5 µm. This is shown to be a direct consequence of the absorption of the TM-polarized photons travelling in a direction parallel to the device epitaxial layers. Presently disclosed cathodoluminescence measurements show the lateral absorption length for 275 nm DUV photons to be 15 µm, which is ~1000 times shorter than that for waveguiding in the A0.65Ga0.35N cladding layers. Results show the re-absorption of this laterally travelling emission by the multiple quantum wells and the p-contact GaN layer to be a key factor limiting the LEE. Hence, for DUV emitters, scaling down to sub-20 µm device dimensions is critical for maximizing LEE. Presently disclosed sub-20 µm AIGaN-based LEDs do not show pronounced edge recombination effects.Type: ApplicationFiled: May 18, 2022Publication date: March 30, 2023Inventors: RICHARD FLOYD, ASIF KHAN, MIKHAIL GAEVSKI, MVS CHANDRASHEKHAR, GREGORY SIMIN
-
Publication number: 20210202791Abstract: A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.Type: ApplicationFiled: March 11, 2021Publication date: July 1, 2021Applicant: Sensor Electronic Technology, Inc.Inventors: Mikhail Gaevski, Alexander Dobrinsky, Maxim S. Shatalov, Michael Shur
-
Patent number: 10950747Abstract: A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.Type: GrantFiled: June 20, 2018Date of Patent: March 16, 2021Assignee: Sensor Electronic Technology, Inc.Inventors: Mikhail Gaevski, Alexander Dobrinsky, Maxim S. Shatalov, Michael Shur
-
Patent number: 10923623Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.Type: GrantFiled: March 12, 2019Date of Patent: February 16, 2021Assignee: Sensor Electronic Technology, Inc.Inventors: Michael Shur, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Remigijus Gaska, Mikhail Gaevski
-
Patent number: 10892381Abstract: A growth layer having a growth surface with protruding domains is described. The protruding domains can be separated by a substantially flat growth surface located between the protruding domains. A protruding domain can include an internal region that can be filled with a gas and/or can be partially or completely filled with one or more materials that differ from the material of the growth layer, which forms an outer surface of each of the protruding domains.Type: GrantFiled: February 28, 2019Date of Patent: January 12, 2021Assignee: Sensor Electronic Technology, Inc.Inventors: Mikhail Gaevski, Alexander Dobrinsky
-
Patent number: 10854785Abstract: An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include an n-type semiconductor layer having a surface. A mesa can be located over a first portion of the surface of the n-type semiconductor layer and have a mesa boundary. An n-type contact region can be located over a second portion of the surface of the n-type semiconductor contact layer entirely distinct from the first portion, and be at least partially defined by the mesa boundary. A first n-type metallic contact layer can be located over at least a portion of the n-type contact region in proximity of the mesa boundary, where the first n-type metallic contact layer forms an ohmic contact with the n-type semiconductor layer. A second metallic contact layer can be located over a second portion of the n-type contact region, where the second metallic contact layer is formed of a reflective metallic material.Type: GrantFiled: October 31, 2017Date of Patent: December 1, 2020Assignee: Sensor Electronic Technology, Inc.Inventors: Alexander Dobrinsky, Maxim S. Shatalov, Mikhail Gaevski, Michael Shur
-
Patent number: 10707379Abstract: An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include an n-type semiconductor layer having a surface. A mesa can be located over a first portion of the surface of the n-type semiconductor layer and have a mesa boundary, which has a shape including a plurality of interconnected fingers. The n-type semiconductor layer can have a shape at least partially defined by the mesa boundary. A first n-type contact layer can be located adjacent to another portion of the n-type semiconductor contact layer, where the first n-type contact layer forms an ohmic contact with the n-type semiconductor layer. A second contact layer can be located over a second portion of the n-type semiconductor contact layer, where the second contact layer is formed of a reflective material.Type: GrantFiled: July 2, 2018Date of Patent: July 7, 2020Assignee: Sensor Electronic Technology, Inc.Inventors: Alexander Dobrinsky, Maxim S. Shatalov, Mikhail Gaevski, Michael Shur
-
Patent number: 10483387Abstract: A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. The lateral portion of the device channel can be located adjacent to a first surface of the device structure, and one or more contacts and/or a gate can be formed on the first surface. The device structure also includes a set of insulating layers located in the device structure between the lateral portion of the device channel and a second surface of the device structure opposite the first surface. An opening in the set of insulating layers defines a transition region between the lateral portion of the device channel and a vertical portion of the device channel. A contact to the vertical portion of the device channel can be located on the second surface.Type: GrantFiled: March 21, 2017Date of Patent: November 19, 2019Assignee: Sensor Electronic Technology, Inc.Inventors: Grigory Simin, Mikhail Gaevski, Michael Shur, Remigijus Gaska
-
Publication number: 20190267512Abstract: A growth layer having a growth surface with protruding domains is described. The protruding domains can be separated by a substantially flat growth surface located between the protruding domains. A protruding domain can include an internal region that can be filled with a gas and/or can be partially or completely filled with one or more materials that differ from the material of the growth layer, which forms an outer surface of each of the protruding domains.Type: ApplicationFiled: February 28, 2019Publication date: August 29, 2019Applicant: Sensor Electronic Technology, Inc.Inventors: Mikhail Gaevski, Alexander Dobrinsky
-
Publication number: 20190207059Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.Type: ApplicationFiled: March 12, 2019Publication date: July 4, 2019Inventors: Michael Shur, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Remigijus Gaska, Mikhail Gaevski
-
Patent number: 10243100Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.Type: GrantFiled: August 28, 2017Date of Patent: March 26, 2019Assignee: Sensor Electronic Technology, Inc.Inventors: Michael Shur, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Remigijus Gaska, Mikhail Gaevski
-
Patent number: 10224408Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.Type: GrantFiled: May 22, 2017Date of Patent: March 5, 2019Assignee: Sensor Electronic Technology, Inc.Inventors: Mikhail Gaevski, Grigory Simin, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
-
Patent number: 10147854Abstract: A solution for packaging an optoelectronic device using an ultraviolet transparent polymer is provided. The ultraviolet transparent polymer material can be placed adjacent to the optoelectronic device and/or a device package on which the optoelectronic device is mounted. Subsequently, the ultraviolet transparent polymer material can be processed to cause the ultraviolet transparent polymer material to adhere to the optoelectronic device and/or the device package. The ultraviolet transparent polymer can be adhered in a manner that protects the optoelectronic device from the ambient environment.Type: GrantFiled: December 22, 2016Date of Patent: December 4, 2018Assignee: Sensor Electronic Technology, Inc.Inventors: Maxim S. Shatalov, Saulius Smetona, Alexander Dobrinsky, Michael Shur, Mikhail Gaevski
-
Patent number: 10147848Abstract: An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include a n-type semiconductor layer having a surface. A mesa can be located over a first portion of the surface of the n-type semiconductor layer and have a mesa boundary. A n-type contact region can be located over a second portion of the surface of the n-type semiconductor contact layer entirely distinct from the first portion, and be at least partially defined by the mesa boundary. A first n-type metallic contact layer can be located over at least a portion of the n-type contact region in proximity of the mesa boundary, where the first n-type metallic contact layer forms an ohmic contact with the n-type semiconductor layer. A second n-type metallic contact layer can be located over a second portion of the n-type contact region, where the second n-type metallic contact layer is formed of a reflective metallic material.Type: GrantFiled: October 3, 2016Date of Patent: December 4, 2018Assignee: Sensor Electronic Technology, Inc.Inventors: Mikhail Gaevski, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur
-
Publication number: 20180323345Abstract: An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include an n-type semiconductor layer having a surface. A mesa can be located over a first portion of the surface of the n-type semiconductor layer and have a mesa boundary, which has a shape including a plurality of interconnected fingers. The n-type semiconductor layer can have a shape at least partially defined by the mesa boundary. A first n-type contact layer can be located adjacent to another portion of the n-type semiconductor contact layer, where the first n-type contact layer forms an ohmic contact with the n-type semiconductor layer. A second contact layer can be located over a second portion of the n-type semiconductor contact layer, where the second contact layer is formed of a reflective material.Type: ApplicationFiled: July 2, 2018Publication date: November 8, 2018Applicant: Sensor Electronic Technology, Inc.Inventors: Alexander Dobrinsky, Maxim S. Shatalov, Mikhail Gaevski, Michael Shur
-
Publication number: 20180315886Abstract: A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.Type: ApplicationFiled: June 20, 2018Publication date: November 1, 2018Applicant: Sensor Electronic Technology, Inc.Inventors: Mikhail Gaevski, Alexander Dobrinsky, Maxim S. Shatalov, Michael Shur
-
Patent number: 10090210Abstract: A metal-organic chemical vapor deposition (MOCVD) growth with temperature controlled layer is described. A substrate or susceptor can have a temperature controlled layer formed thereon to adjust the temperature uniformity of a MOCVD growth process used to epitaxially grow semiconductor layers. In one embodiment, the substrate and/or the susceptor can be profiled with a shape that improves temperature uniformity during the MOCVD growth process. The profiled shape can be formed with material that provides a desired temperature distribution to the substrate that is in accordance with a predetermined temperature profile for the substrate for a particular MOCVD process.Type: GrantFiled: October 3, 2016Date of Patent: October 2, 2018Assignee: Sensor Electronic Technology, Inc.Inventors: Maxim S. Shatalov, Mikhail Gaevski, Igor Agafonov, Robert M. Kennedy, Alexander Dobrinsky, Michael Shur, Emmanuel Lakios
-
Publication number: 20180069154Abstract: An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include an n-type semiconductor layer having a surface. A mesa can be located over a first portion of the surface of the n-type semiconductor layer and have a mesa boundary. An n-type contact region can be located over a second portion of the surface of the n-type semiconductor contact layer entirely distinct from the first portion, and be at least partially defined by the mesa boundary. A first n-type metallic contact layer can be located over at least a portion of the n-type contact region in proximity of the mesa boundary, where the first n-type metallic contact layer forms an ohmic contact with the n-type semiconductor layer. A second metallic contact layer can be located over a second portion of the n-type contact region, where the second metallic contact layer is formed of a reflective metallic material.Type: ApplicationFiled: October 31, 2017Publication date: March 8, 2018Applicant: Sensor Electronic Technology, Inc.Inventors: Alexander Dobrinsky, Maxim S. Shatalov, Mikhail Gaevski, Michael Shur