Patents by Inventor Mikhail Korolik
Mikhail Korolik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240258116Abstract: Exemplary semiconductor processing methods may include flowing an etchant precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may define an exposed region of a titanium-containing material. The methods may include contacting the substrate with the etchant precursor. The methods may include removing at least a portion of the titanium-containing material.Type: ApplicationFiled: January 26, 2023Publication date: August 1, 2024Applicant: Applied Materials, Inc.Inventors: Baiwei Wang, Wanxing Xu, Lisa J. Enman, Aaron Dangerfield, Rohan Puligoru Reddy, Xiaolin C. Chen, Mikhail Korolik, Bhaskar Jyoti Bhuyan, Zhenjiang Cui, Anchuan Wang
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Publication number: 20240120210Abstract: Exemplary methods of etching a silicon-containing material may include flowing a first fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include flowing a sulfur-containing precursor into the remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the first fluorine-containing precursor and the sulfur-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include isotropically etching the layers of silicon nitride while substantially maintaining the silicon oxide.Type: ApplicationFiled: October 11, 2022Publication date: April 11, 2024Applicant: Applied Materials, Inc.Inventors: Mikhail Korolik, Paul E. Gee, Wei Ying Doreen Yong, Tuck Foong Koh, John Sudijono, Philip A. Kraus, Thai Cheng Chua
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Publication number: 20220293430Abstract: Exemplary methods of etching a silicon-containing material may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include isotropically etching the layers of silicon nitride while substantially maintaining the silicon oxide.Type: ApplicationFiled: February 1, 2022Publication date: September 15, 2022Applicants: Applied Materials, Inc., National University of SingaporeInventors: Mikhail Korolik, Paul E. Gee, Bhaskar Jyoti Bhuyan, John Sudijono, Wei Ying Doreen Yong, Kah Wee Ang, Samarth Jain
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Publication number: 20210111033Abstract: Exemplary methods of etching a silicon-containing material may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The fluorine-containing precursor may be characterized by a molecular formula of XFy, and y may be greater than or equal to 5. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include laterally etching the layers of silicon nitride.Type: ApplicationFiled: October 10, 2019Publication date: April 15, 2021Applicants: Applied Materials, Inc., National University of SingaporeInventors: Mikhail Korolik, Paul E. Gee, Bhaskar Jyoti Bhuyan, John Sudijono, Doreen Wei Ying Yong, Kah Wee Ang, Debanjan Jana, Niharendu Mahapatra
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Patent number: 10593553Abstract: Exemplary methods for etching a germanium-containing material may include forming a plasma of a fluorine-containing precursor in a remote plasma region of a semiconductor processing chamber. The methods may include flowing effluents of the fluorine-containing precursor through apertures defined in a chamber component. The apertures may be coated with a catalytic material. The methods may include reducing a concentration of fluorine radicals in the plasma effluents with the catalytic material. The methods may also include delivering the plasma effluents to a processing region of the semiconductor processing chamber. A substrate having an exposed region of a germanium-containing material may be housed within the processing region. The methods may further include etching the germanium-containing material.Type: GrantFiled: August 6, 2018Date of Patent: March 17, 2020Assignee: Applied Materials, Inc.Inventors: Mikhail Korolik, Nitin Ingle, Dimitri Kioussis
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Patent number: 10204796Abstract: The present disclosure provides methods for etching a silicon material in a device structure in semiconductor applications. In one example, a method for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including HF gas without nitrogen etchants to remove a silicon material disposed on a substrate.Type: GrantFiled: November 27, 2017Date of Patent: February 12, 2019Assignee: Applied Materials, Inc.Inventors: Nitin K. Ingle, Anchuan Wang, Zihui Li, Mikhail Korolik
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Publication number: 20190043727Abstract: Exemplary methods for etching a germanium-containing material may include forming a plasma of a fluorine-containing precursor in a remote plasma region of a semiconductor processing chamber. The methods may include flowing effluents of the fluorine-containing precursor through apertures defined in a chamber component. The apertures may be coated with a catalytic material. The methods may include reducing a concentration of fluorine radicals in the plasma effluents with the catalytic material. The methods may also include delivering the plasma effluents to a processing region of the semiconductor processing chamber. A substrate having an exposed region of a germanium-containing material may be housed within the processing region. The methods may further include etching the germanium-containing material.Type: ApplicationFiled: August 6, 2018Publication date: February 7, 2019Applicant: Applied Materials, Inc.Inventors: Mikhail Korolik, Nitin Ingle, Dimitri Kioussis
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Patent number: 10177227Abstract: The present disclosure provides methods for forming horizontal gate-all-around (hGAA) structure devices. In one example, a method includes selectively and laterally etching a first group of sidewalls of a first layer in a multi-material layer, wherein the multi-material layer comprises repeating pairs of the first layer and a second layer, the first and the second layers having the first group and a second group of sidewalls respectively, the first group of sidewalls from the first layer exposed through openings defined in the multi-material layer and a group of inner spacers formed atop of the second group of sidewalls from the second layer, forming a recess from the first group of sidewalls of the first layer and defining a vertical wall inward from an outer vertical surface of the inner spacer formed atop of the second layers, and forming an epi-silicon layer from the recess of the first layer.Type: GrantFiled: August 28, 2017Date of Patent: January 8, 2019Assignee: Applied Materials, Inc.Inventors: Naomi Yoshida, Lin Dong, Shiyu Sun, Myungsun Kim, Nam Sung Kim, Dimitri Kioussis, Mikhail Korolik, Gaetano Santoro, Vanessa Pena
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Publication number: 20180226278Abstract: Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing a nitrogen-containing precursor into the substrate processing region. The methods may further include removing an amount of the metal-containing material.Type: ApplicationFiled: February 6, 2017Publication date: August 9, 2018Applicant: Applied Materials, Inc.Inventors: Ranga Rao Arnepalli, Prerna Sonthalia Goradia, Robert Jan Visser, Nitin Ingle, Mikhail Korolik, Jayeeta Biswas, Saurabh Lodha
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Patent number: 10043684Abstract: Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing a nitrogen-containing precursor into the substrate processing region. The methods may further include removing an amount of the metal-containing material.Type: GrantFiled: February 6, 2017Date of Patent: August 7, 2018Assignee: Applied Materials, Inc.Inventors: Ranga Rao Arnepalli, Prerna Sonthalia Goradia, Robert Jan Visser, Nitin Ingle, Mikhail Korolik, Jayeeta Biswas, Saurabh Lodha
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Patent number: 10043674Abstract: Exemplary methods for etching a germanium-containing material may include forming a plasma of a fluorine-containing precursor in a remote plasma region of a semiconductor processing chamber. The methods may include flowing effluents of the fluorine-containing precursor through apertures defined in a chamber component. The apertures may be coated with a catalytic material. The methods may include reducing a concentration of fluorine radicals in the plasma effluents with the catalytic material. The methods may also include delivering the plasma effluents to a processing region of the semiconductor processing chamber. A substrate having an exposed region of a germanium-containing material may be housed within the processing region. The methods may further include etching the germanium-containing material.Type: GrantFiled: August 4, 2017Date of Patent: August 7, 2018Assignee: Applied Materials, Inc.Inventors: Mikhail Korolik, Nitin Ingle, Dimitri Kioussis
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Publication number: 20180082849Abstract: The present disclosure provides methods for etching a silicon material in a device structure in semiconductor applications. In one example, a method for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including HF gas without nitrogen etchants to remove a silicon material disposed on a substrate.Type: ApplicationFiled: November 27, 2017Publication date: March 22, 2018Inventors: Nitin K. INGLE, Anchuan WANG, Zihui LI, Mikhail KOROLIK
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Patent number: 9875907Abstract: Methods of etching silicon nitride faster than silicon oxide are described. Exposed portions of silicon nitride and silicon oxide may both be present on a patterned substrate. A self-assembled monolayer (SAM) is selectively deposited over the silicon oxide but not on the exposed silicon nitride. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the OH group on the exposed silicon oxide portion and the tail moiety extending away from the patterned substrate. A subsequent gas-phase etch using anhydrous vapor-phase HF may then be used to selectively remove silicon nitride much faster than silicon oxide because the SAM has been found to delay the etch and reduce the etch rate.Type: GrantFiled: August 11, 2016Date of Patent: January 23, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Fei Wang, Mikhail Korolik, Nitin K. Ingle, Anchuan Wang, Robert Jan Visser
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Patent number: 9859128Abstract: Methods of etching silicon nitride faster than silicon or silicon oxide are described. Methods of selectively depositing additional material onto the silicon nitride are also described. Exposed portions of silicon nitride and silicon oxide may both be present on a patterned substrate. A self-assembled monolayer (SAM) is selectively deposited over the silicon oxide but not on the exposed silicon nitride. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the OH group on the exposed silicon oxide portion and the tail moiety extending away from the patterned substrate. A subsequent exposure to an etchant or a deposition precursor may then be used to selectively remove silicon nitride or to selectively deposit additional material on the silicon nitride.Type: GrantFiled: October 28, 2016Date of Patent: January 2, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Fei Wang, Mikhail Korolik, Nitin K. Ingle, Anchuan Wang, Robert Jan Visser
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Patent number: 9831097Abstract: The present disclosure provides methods for etching a silicon material in a device structure in semiconductor applications. In one example, a method for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including HF gas without nitrogen etchants to remove a silicon material disposed on a substrate.Type: GrantFiled: February 15, 2016Date of Patent: November 28, 2017Assignee: Applied Materials, Inc.Inventors: Nitin K. Ingle, Anchuan Wang, Zihui Li, Mikhail Korolik
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Publication number: 20170178915Abstract: The present disclosure provides methods for etching a silicon material in a device structure in semiconductor applications. In one example, a method for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including HF gas without nitrogen etchants to remove a silicon material disposed on a substrate.Type: ApplicationFiled: February 15, 2016Publication date: June 22, 2017Inventors: Nitin K. INGLE, Anchuan WANG, Zihui LI, Mikhail KOROLIK
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Publication number: 20170148642Abstract: Methods of etching silicon nitride faster than silicon or silicon oxide are described. Methods of selectively depositing additional material onto the silicon nitride are also described. Exposed portions of silicon nitride and silicon oxide may both be present on a patterned substrate. A self-assembled monolayer (SAM) is selectively deposited over the silicon oxide but not on the exposed silicon nitride. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the OH group on the exposed silicon oxide portion and the tail moiety extending away from the patterned substrate. A subsequent exposure to an etchant or a deposition precursor may then be used to selectively remove silicon nitride or to selectively deposit additional material on the silicon nitride.Type: ApplicationFiled: October 28, 2016Publication date: May 25, 2017Applicant: APPLIED MATERIALS, INC.Inventors: Fei Wang, Mikhail Korolik, Nitin K. Ingle, Anchuan Wang, Robert Jan Visser
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Publication number: 20170148640Abstract: Methods of etching silicon nitride faster than silicon oxide are described. Exposed portions of silicon nitride and silicon oxide may both be present on a patterned substrate. A self-assembled monolayer (SAM) is selectively deposited over the silicon oxide but not on the exposed silicon nitride. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the OH group on the exposed silicon oxide portion and the tail moiety extending away from the patterned substrate. A subsequent gas-phase etch using anhydrous vapor-phase HF may then be used to selectively remove silicon nitride much faster than silicon oxide because the SAM has been found to delay the etch and reduce the etch rate.Type: ApplicationFiled: August 11, 2016Publication date: May 25, 2017Inventors: Fei Wang, Mikhail Korolik, Nitin K. Ingle, Anchuan Wang, Robert Jan Visser
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Patent number: 9576809Abstract: Methods of selectively etching silicon relative to silicon germanium are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the silicon. The plasmas effluents react with exposed surfaces and selectively remove silicon while very slowly removing other exposed materials. The methods are useful for removing Si(1-X)GeX faster than Si(1-Y)GeY, for X<Y. In some embodiments, the silicon germanium etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.Type: GrantFiled: May 5, 2014Date of Patent: February 21, 2017Assignee: Applied Materials, Inc.Inventors: Mikhail Korolik, Nitin K. Ingle, Jingchun Zhang, Anchuan Wang, Jie Liu
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Patent number: 9478434Abstract: A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a chlorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.Type: GrantFiled: November 17, 2014Date of Patent: October 25, 2016Assignee: Applied Materials, Inc.Inventors: Xikun Wang, Mandar Pandit, Zhenjiang Cui, Mikhail Korolik, Anchuan Wang, Nitin K. Ingle, Jie Liu