Abstract: The invention relates to semiconductor devices for converting ionizing radiation into an electrical signal. The present ionizing radiation sensor has an n+-i-p+ structure, produced using the planar process. The sensor contains an i-region in the form of a high-resistivity substrate of high-purity float-zone silicon with p-type conductivity, having on its front face n+-regions (2, 3), an SiO2 layer (4), aluminium metallization (5), and a passivation layer. On the front face of the substrate (1) n-regions (2) are formed by ion implantation; a masking layer of SiO2 (layer 4) is grown; aluminium metallization (5) is deposited; and a passivation layer (6) is applied.

Abstract: The invention relates to semiconductor devices for converting ionizing radiation into an electrical signal. The present ionizing radiation sensor has an n+-i-p+ structure, produced using the planar process. The sensor contains an i-region in the form of a high-resistivity substrate of high-purity float-zone silicon with p-type conductivity, having on its front face n+-regions (2, 3), an SiO2 layer (4), aluminium metallization (5), and a passivation layer. On the front face of the substrate (1) n-regions (2) are formed by ion implantation; a masking layer of SiO2 (layer 4) is grown; aluminium metallization (5) is deposited; and a passivation layer (6) is applied.

Abstract: The invention relates to semiconductor devices for conversion of the ionizing radiation into an electrical signal enabling determination of the radiation level and absorbed dose of gamma, proton, electronic and alpha radiations being measured. The ionizing radiation sensor is a p-i-n structure fabricated by the planar technology. The sensor contains a high-resistance silicon substrate of n-type conductivity, on whose front side there are p-regions; layer from SiO2; aluminum metallization; and a passivating layer. P-region, located in the central part of the substrate and occupying the most surface area, forms the active region of the sensor. At least two p-regions in the form of circular elements are located in the inactive region on the perimeter of the substrate around the central p-region and ensure a decrease in the surface current value and smooth voltage drop from the active region to the device perimeter.

Abstract: The invention relates to semiconductor devices for conversion of the ionizing radiation into an electrical signal enabling determination of the radiation level and absorbed dose of gamma, proton, electronic and alpha radiations being measured. The ionizing radiation sensor is a p-i-n structure fabricated by the planar technology. The sensor contains a high-resistance silicon substrate of n-type conductivity, on whose front side there are p-regions; layer from SiO2; aluminum metallization; and a passivating layer. P-region, located in the central part of the substrate and occupying the most surface area, forms the active region of the sensor. At least two p-regions in the form of circular elements are located in the inactive region on the perimeter of the substrate around the central p-region and ensure a decrease in the surface current value and smooth voltage drop from the active region to the device perimeter.