Patents by Inventor Mikhail Naydenkov

Mikhail Naydenkov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7133586
    Abstract: A fast silicon-on-insulator (SOI) waveguide-based optical device enhanced with minority charge carrier lifetime modifiers enables faster modulation speeds in optical attenuators, optical intensity/phase-modulators, and optical switches whose operation principles are based on free-carrier injection into a waveguide. The waveguide is doped with gold (Au) or platinum (Pt) such that when a drive voltage (applied to the device) is turned off, the minority charge carriers rapidly annihilate because gold doping reduces the minority carrier lifetime, which improves transient characteristics of the optical device. Integration of the fast active device with passive devices such as WDM demultiplexers/multiplexers on the SOI optical waveguide platform enables realization of monolithic integrated optical components for advanced functionality such as dynamic spectral equalization.
    Type: Grant
    Filed: April 25, 2006
    Date of Patent: November 7, 2006
    Assignee: Intel Corporation
    Inventors: Sivasubramaniam Yegnanarayanan, Mikhail Naydenkov
  • Patent number: 7133585
    Abstract: A fast silicon-on-insulator (SOI) waveguide-based optical device enhanced with minority charge carrier lifetime modifiers enables faster modulation speeds in optical attenuators, optical intensity/phase-modulators, and optical switches whose operation principles are based on free-carrier injection into a waveguide. The waveguide is doped with gold (Au) or platinum (Pt) such that when a drive voltage (applied to the device) is turned off, the minority charge carriers rapidly annihilate because gold doping reduces the minority carrier lifetime, which improves transient characteristics of the optical device. Integration of the fast active device with passive devices such as WDM demultiplexers/multiplexers on the SOI optical waveguide platform enables realization of monolithic integrated optical components for advanced functionality such as dynamic spectral equalization.
    Type: Grant
    Filed: April 25, 2006
    Date of Patent: November 7, 2006
    Assignee: Intel Corporation
    Inventors: Sivasubramaniam Yegnanarayanan, Mikhail Naydenkov
  • Publication number: 20060198597
    Abstract: A fast silicon-on-insulator (SOI) waveguide-based optical device enhanced with minority charge carrier lifetime modifiers enables faster modulation speeds in optical attenuators, optical intensity/phase-modulators, and optical switches whose operation principles are based on free-carrier injection into a waveguide. The waveguide is doped with gold (Au) or platinum (Pt) such that when a drive voltage (applied to the device) is turned off, the minority charge carriers rapidly annihilate because gold doping reduces the minority carrier lifetime, which improves transient characteristics of the optical device. Integration of the fast active device with passive devices such as WDM demultiplexers/multiplexers on the SOI optical waveguide platform enables realization of monolithic integrated optical components for advanced functionality such as dynamic spectral equalization.
    Type: Application
    Filed: April 25, 2006
    Publication date: September 7, 2006
    Inventors: Sivasubramaniam Yegnanarayanan, Mikhail Naydenkov
  • Publication number: 20060198572
    Abstract: A fast silicon-on-insulator (SOI) waveguide-based optical device enhanced with minority charge carrier lifetime modifiers enables faster modulation speeds in optical attenuators, optical intensity/phase-modulators, and optical switches whose operation principles are based on free-carrier injection into a waveguide. The waveguide is doped with gold (Au) or platinum (Pt) such that when a drive voltage (applied to the device) is turned off, the minority charge carriers rapidly annihilate because gold doping reduces the minority carrier lifetime, which improves transient characteristics of the optical device. Integration of the fast active device with passive devices such as WDM demultiplexers/multiplexers on the SOI optical waveguide platform enables realization of monolithic integrated optical components for advanced functionality such as dynamic spectral equalization.
    Type: Application
    Filed: April 25, 2006
    Publication date: September 7, 2006
    Inventors: Sivasubramaniam Yegnanarayanan, Mikhail Naydenkov
  • Patent number: 7092609
    Abstract: A fast silicon-on-insulator (SOI) waveguide-based optical device enhanced with minority charge carrier lifetime modifiers enables faster modulation speeds in optical attenuators, optical intensity/phase-modulators, and optical switches whose operation principles are based on free-carrier injection into a waveguide. The waveguide is doped with gold (Au) or platinum (Pt) such that when a drive voltage (applied to the device) is turned off, the minority charge carriers rapidly annihilate because gold doping reduces the minority carrier lifetime, which improves transient characteristics of the optical device. Integration of the fast active device with passive devices such as WDM demultiplexers/multiplexers on the SOI optical waveguide platform enables realization of monolithic integrated optical components for advanced functionality such as dynamic spectral equalization.
    Type: Grant
    Filed: January 31, 2002
    Date of Patent: August 15, 2006
    Assignee: Intel Corporation
    Inventors: Sivasubramaniam Yegnanarayanan, Mikhail Naydenkov
  • Publication number: 20040029304
    Abstract: A cost effective method is provided for assembly of hybrid optoelectronic circuits requiring flip-chip bonding of multiple active optoelectronic devices onto common substrate or optical bench platform with fine pitch and high accuracy “after-bonding” alignment to the alignment features on substrate and/or to other elements of the hybrid circuit. A Flip-Chip Bonder equipped with high precision Bonding Arm and optical and mechanical system, heated substrate chuck and heated pick-up tool may be used both for alignment and thermal bonding of active component dies to corresponding bonding pads on the common substrate using gold-tin (Au—Sn) solder disposed between die bonding pad and the corresponding substrate bonding pad.
    Type: Application
    Filed: August 5, 2003
    Publication date: February 12, 2004
    Applicant: Intel Corporation
    Inventors: Mikhail Naydenkov, Sivasubramaniam Yegnanarayanan, Quyen Huynh
  • Patent number: 6660548
    Abstract: A cost effective method is provided for assembly of hybrid optoelectronic circuits requiring flip-chip bonding of multiple active optoelectronic devices onto common substrate or optical bench platform with fine pitch and high accuracy “after-bonding” alignment to the alignment features on substrate and/or to other elements of the hybrid circuit. A Flip-Chip Bonder equipped with high precision Bonding Arm and optical and mechanical system, heated substrate chuck and heated pick-up tool may be used both for alignment and thermal bonding of active component dies to corresponding bonding pads on the common substrate using gold-tin (Au—Sn) solder disposed between die bonding pad and the corresponding substrate bonding pad.
    Type: Grant
    Filed: March 27, 2002
    Date of Patent: December 9, 2003
    Assignee: Intel Corporation
    Inventors: Mikhail Naydenkov, Sivasubramaniam Yegnanarayanan, Quyen Huynh
  • Publication number: 20030186476
    Abstract: A cost effective method is provided for assembly of hybrid optoelectronic circuits requiring flip-chip bonding of multiple active optoelectronic devices onto common substrate or optical bench platform with fine pitch and high accuracy “after-bonding” alignment to the alignment features on substrate and/or to other elements of the hybrid circuit. A Flip-Chip Bonder equipped with high precision Bonding Arm and optical and mechanical system, heated substrate chuck and heated pick-up tool may be used both for alignment and thermal bonding of active component dies to corresponding bonding pads on the common substrate using gold-tin (Au—Sn) solder disposed between die bonding pad and the corresponding substrate bonding pad.
    Type: Application
    Filed: March 27, 2002
    Publication date: October 2, 2003
    Inventors: Mikhail Naydenkov, Sivasubramaniam Yegnanarayanan, Quyen Huynh
  • Publication number: 20030142943
    Abstract: A fast silicon-on-insulator (SOI) waveguide-based optical device enhanced with minority charge carrier lifetime modifiers enables faster modulation speeds in optical attenuators, optical intensity/phase-modulators, and optical switches whose operation principles are based on free-carrier injection into a waveguide. The waveguide is doped with gold (Au) or platinum (Pt) such that when a drive voltage (applied to the device) is turned off, the minority charge carriers rapidly annihilate because gold doping reduces the minority carrier lifetime, which improves transient characteristics of the optical device. Integration of the fast active device with passive devices such as WDM demultiplexers/multiplexers on the SOI optical waveguide platform enables realization of monolithic integrated optical components for advanced functionality such as dynamic spectral equalization.
    Type: Application
    Filed: January 31, 2002
    Publication date: July 31, 2003
    Inventors: Sivasubramaniam Yegnanarayanan, Mikhail Naydenkov