Patents by Inventor Mikhail Naydenkov
Mikhail Naydenkov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7133586Abstract: A fast silicon-on-insulator (SOI) waveguide-based optical device enhanced with minority charge carrier lifetime modifiers enables faster modulation speeds in optical attenuators, optical intensity/phase-modulators, and optical switches whose operation principles are based on free-carrier injection into a waveguide. The waveguide is doped with gold (Au) or platinum (Pt) such that when a drive voltage (applied to the device) is turned off, the minority charge carriers rapidly annihilate because gold doping reduces the minority carrier lifetime, which improves transient characteristics of the optical device. Integration of the fast active device with passive devices such as WDM demultiplexers/multiplexers on the SOI optical waveguide platform enables realization of monolithic integrated optical components for advanced functionality such as dynamic spectral equalization.Type: GrantFiled: April 25, 2006Date of Patent: November 7, 2006Assignee: Intel CorporationInventors: Sivasubramaniam Yegnanarayanan, Mikhail Naydenkov
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Patent number: 7133585Abstract: A fast silicon-on-insulator (SOI) waveguide-based optical device enhanced with minority charge carrier lifetime modifiers enables faster modulation speeds in optical attenuators, optical intensity/phase-modulators, and optical switches whose operation principles are based on free-carrier injection into a waveguide. The waveguide is doped with gold (Au) or platinum (Pt) such that when a drive voltage (applied to the device) is turned off, the minority charge carriers rapidly annihilate because gold doping reduces the minority carrier lifetime, which improves transient characteristics of the optical device. Integration of the fast active device with passive devices such as WDM demultiplexers/multiplexers on the SOI optical waveguide platform enables realization of monolithic integrated optical components for advanced functionality such as dynamic spectral equalization.Type: GrantFiled: April 25, 2006Date of Patent: November 7, 2006Assignee: Intel CorporationInventors: Sivasubramaniam Yegnanarayanan, Mikhail Naydenkov
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Publication number: 20060198597Abstract: A fast silicon-on-insulator (SOI) waveguide-based optical device enhanced with minority charge carrier lifetime modifiers enables faster modulation speeds in optical attenuators, optical intensity/phase-modulators, and optical switches whose operation principles are based on free-carrier injection into a waveguide. The waveguide is doped with gold (Au) or platinum (Pt) such that when a drive voltage (applied to the device) is turned off, the minority charge carriers rapidly annihilate because gold doping reduces the minority carrier lifetime, which improves transient characteristics of the optical device. Integration of the fast active device with passive devices such as WDM demultiplexers/multiplexers on the SOI optical waveguide platform enables realization of monolithic integrated optical components for advanced functionality such as dynamic spectral equalization.Type: ApplicationFiled: April 25, 2006Publication date: September 7, 2006Inventors: Sivasubramaniam Yegnanarayanan, Mikhail Naydenkov
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Publication number: 20060198572Abstract: A fast silicon-on-insulator (SOI) waveguide-based optical device enhanced with minority charge carrier lifetime modifiers enables faster modulation speeds in optical attenuators, optical intensity/phase-modulators, and optical switches whose operation principles are based on free-carrier injection into a waveguide. The waveguide is doped with gold (Au) or platinum (Pt) such that when a drive voltage (applied to the device) is turned off, the minority charge carriers rapidly annihilate because gold doping reduces the minority carrier lifetime, which improves transient characteristics of the optical device. Integration of the fast active device with passive devices such as WDM demultiplexers/multiplexers on the SOI optical waveguide platform enables realization of monolithic integrated optical components for advanced functionality such as dynamic spectral equalization.Type: ApplicationFiled: April 25, 2006Publication date: September 7, 2006Inventors: Sivasubramaniam Yegnanarayanan, Mikhail Naydenkov
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Patent number: 7092609Abstract: A fast silicon-on-insulator (SOI) waveguide-based optical device enhanced with minority charge carrier lifetime modifiers enables faster modulation speeds in optical attenuators, optical intensity/phase-modulators, and optical switches whose operation principles are based on free-carrier injection into a waveguide. The waveguide is doped with gold (Au) or platinum (Pt) such that when a drive voltage (applied to the device) is turned off, the minority charge carriers rapidly annihilate because gold doping reduces the minority carrier lifetime, which improves transient characteristics of the optical device. Integration of the fast active device with passive devices such as WDM demultiplexers/multiplexers on the SOI optical waveguide platform enables realization of monolithic integrated optical components for advanced functionality such as dynamic spectral equalization.Type: GrantFiled: January 31, 2002Date of Patent: August 15, 2006Assignee: Intel CorporationInventors: Sivasubramaniam Yegnanarayanan, Mikhail Naydenkov
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Publication number: 20040029304Abstract: A cost effective method is provided for assembly of hybrid optoelectronic circuits requiring flip-chip bonding of multiple active optoelectronic devices onto common substrate or optical bench platform with fine pitch and high accuracy “after-bonding” alignment to the alignment features on substrate and/or to other elements of the hybrid circuit. A Flip-Chip Bonder equipped with high precision Bonding Arm and optical and mechanical system, heated substrate chuck and heated pick-up tool may be used both for alignment and thermal bonding of active component dies to corresponding bonding pads on the common substrate using gold-tin (Au—Sn) solder disposed between die bonding pad and the corresponding substrate bonding pad.Type: ApplicationFiled: August 5, 2003Publication date: February 12, 2004Applicant: Intel CorporationInventors: Mikhail Naydenkov, Sivasubramaniam Yegnanarayanan, Quyen Huynh
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Patent number: 6660548Abstract: A cost effective method is provided for assembly of hybrid optoelectronic circuits requiring flip-chip bonding of multiple active optoelectronic devices onto common substrate or optical bench platform with fine pitch and high accuracy “after-bonding” alignment to the alignment features on substrate and/or to other elements of the hybrid circuit. A Flip-Chip Bonder equipped with high precision Bonding Arm and optical and mechanical system, heated substrate chuck and heated pick-up tool may be used both for alignment and thermal bonding of active component dies to corresponding bonding pads on the common substrate using gold-tin (Au—Sn) solder disposed between die bonding pad and the corresponding substrate bonding pad.Type: GrantFiled: March 27, 2002Date of Patent: December 9, 2003Assignee: Intel CorporationInventors: Mikhail Naydenkov, Sivasubramaniam Yegnanarayanan, Quyen Huynh
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Publication number: 20030186476Abstract: A cost effective method is provided for assembly of hybrid optoelectronic circuits requiring flip-chip bonding of multiple active optoelectronic devices onto common substrate or optical bench platform with fine pitch and high accuracy “after-bonding” alignment to the alignment features on substrate and/or to other elements of the hybrid circuit. A Flip-Chip Bonder equipped with high precision Bonding Arm and optical and mechanical system, heated substrate chuck and heated pick-up tool may be used both for alignment and thermal bonding of active component dies to corresponding bonding pads on the common substrate using gold-tin (Au—Sn) solder disposed between die bonding pad and the corresponding substrate bonding pad.Type: ApplicationFiled: March 27, 2002Publication date: October 2, 2003Inventors: Mikhail Naydenkov, Sivasubramaniam Yegnanarayanan, Quyen Huynh
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Publication number: 20030142943Abstract: A fast silicon-on-insulator (SOI) waveguide-based optical device enhanced with minority charge carrier lifetime modifiers enables faster modulation speeds in optical attenuators, optical intensity/phase-modulators, and optical switches whose operation principles are based on free-carrier injection into a waveguide. The waveguide is doped with gold (Au) or platinum (Pt) such that when a drive voltage (applied to the device) is turned off, the minority charge carriers rapidly annihilate because gold doping reduces the minority carrier lifetime, which improves transient characteristics of the optical device. Integration of the fast active device with passive devices such as WDM demultiplexers/multiplexers on the SOI optical waveguide platform enables realization of monolithic integrated optical components for advanced functionality such as dynamic spectral equalization.Type: ApplicationFiled: January 31, 2002Publication date: July 31, 2003Inventors: Sivasubramaniam Yegnanarayanan, Mikhail Naydenkov