Patents by Inventor Mikhail Rodionovich Baklanov
Mikhail Rodionovich Baklanov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7042091Abstract: The present invention discloses the formation of a hard mask layer in an organic polymer layer by modifying at least locally the chemical composition of a part of said exposed organic low-k polymer. This modification starts from an exposed surface of the polymer and extends into the polymer thereby increasing the chemical resistance of the modified part of the polymer. As a result, this modified part can be used as a hard mask or an etch stop layer for plasma etching.Type: GrantFiled: April 27, 2001Date of Patent: May 9, 2006Assignee: IMEC vzwInventors: Mikhail Rodionovich Baklanov, Serge Vanhaelemeersch, Karen Maex, Joost Waeterloos, Gilbert Declerck
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Patent number: 6900140Abstract: A method for forming an opening in an organic insulating layer by covering the insulating layer with a bilayer containing a resist hard mask layer and a resist layer on top of the resist hard mask layer. The bilayer is patterned, and an opening is created by plasma etching the insulating layer in a reaction chamber containing a gas mixture. The plasma etching is controlled so that virtually no etch residues are deposited and so that the side walls of the opening are fluorinated to enhance the anisotropy of the etching. The gas mixture can be a mixture of a fluorine-containing gas and an inert gas, a mixture of an oxygen-containing gas and an inert gas, or a mixture of hydrogen bromide and an additive.Type: GrantFiled: March 12, 2004Date of Patent: May 31, 2005Assignee: Interuniversitair Microelektronica Centrum (IMEC)Inventors: Serge Vanhaelemeersch, Mikhail Rodionovich Baklanov
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Patent number: 6844267Abstract: A method for forming an opening in an organic insulating layer by covering the insulating layer with a bilayer containing a resist hard mask layer and a resist layer on top of the resist hard mask layer. The bilayer is patterned, and an opening is created by plasma etching the insulating layer in a reaction chamber containing a gas mixture. The plasma etching is controlled so that virtually no etch residues are deposited and so that the side walls of the opening are fluorinated to enhance the anisotropy of the etching. The gas mixture can be a mixture of a fluorine-containing gas and an inert gas, a mixture of an oxygen-containing gas and an inert gas, or a mixture of hydrogen bromide and an additive.Type: GrantFiled: October 22, 1998Date of Patent: January 18, 2005Assignee: Interuniversitair Micro-Elektronica CentrumInventors: Serge Vanhaelemeersch, Mikhail Rodionovich Baklanov
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Publication number: 20040175945Abstract: A method for forming an opening in an organic insulating layer by covering the insulating layer with a bilayer containing a resist hard mask layer and a resist layer on top of the resist hard mask layer. The bilayer is patterned, and an opening is created by plasma etching the insulating layer in a reaction chamber containing a gas mixture. The plasma etching is controlled so that virtually no etch residues are deposited and so that the side walls of the opening are fluorinated to enhance the anisotropy of the etching. The gas mixture can be a mixture of a fluorine-containing gas and an inert gas, a mixture of an oxygen-containing gas and an inert gas, or a mixture of hydrogen bromide and an additive.Type: ApplicationFiled: March 12, 2004Publication date: September 9, 2004Inventors: Serge Vanhaelemeersch, Mikhail Rodionovich Baklanov
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Patent number: 6662631Abstract: A method and apparatus for evaluation of films, such as low-k thin films with nano-scale pores, are provided. The evaluation may include characterization of the pore structure, the characterization results in determining pore sizes, hence obtaining pore size data. Moreover, the characterization may result in a non-destructive evaluation of mechanical properties, in particular the Young's Modulus, or the effect of interfering physical & chemical factors such as Pore Killers. Further, in line monitoring or studying of pore structure porosity and pore size distribution (PSD) of low-k films and evaluation of the mechanical properties of porous low-k films simultaneously using the same set of experimental data is provided.Type: GrantFiled: July 12, 2002Date of Patent: December 16, 2003Assignees: Interuniversitair Microelektronica Centrum, Technokom-Centre Advanced Technology, XPEQTInventors: Mikhail Rodionovich Baklanov, Konstantin Petrovich Mogilnikov, Karen Maex, Denis Shamiryan, Fedor Nikolaevich Dultsev
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Patent number: 6635964Abstract: The present invention is related to a metallization structure on a fluorine-containing dielectric. This metallization structure includes a conductive pattern; a fluorine-containing dielectric; and a barrier layer containing a material, i.e. a near noble metal such as Co, Ni, Pt, and Pd. The barrier layer includes at least a first part, being positioned between the fluorine-containing dielectric and the conductive pattern, the first part containing at least a first and a second sub-layer, the first sub-layer contacting the fluorine-containing dielectric being impermeable for fluorine.Type: GrantFiled: August 13, 2001Date of Patent: October 21, 2003Assignee: Interuniversitair Micro-Elektronica Centrum (IMEC vzw)Inventors: Karen Maex, Mikhail Rodionovich Baklanov, Serge Vanhaelemeersch
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Publication number: 20030094032Abstract: A method and apparatus for evaluation of films, such as low-k thin films with nano-scale pores, are provided. The evaluation may include characterization of the pore structure, the characterization results in determining pore sizes, hence obtaining pore size data. Moreover, the characterization may result in a non-destructive evaluation of mechanical properties, in particular the Young's Modulus. Further, in line monitoring or studying of pore structure porosity and pore size distribution (PSD) of low-K films and evaluation of the mechanical properties of porous low-k films simultaneously using the same set of experimental data is provided.Type: ApplicationFiled: July 12, 2002Publication date: May 22, 2003Inventors: Mikhail Rodionovich Baklanov, Konstantin Petrovich Mogilnikov, Karen Maex, Denis Shamiryan, Fedor Nikolaevich Dultsev
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Patent number: 6435008Abstract: The present invention is related to an apparatus and a non-destructive method for determining the porosity of an element, particularly a thin film, formed on a substrate, said substrate being positioned in a pressurized chamber, said chamber being at a predetermined pressure and at a predetermined temperature. According to this method a gaseous substance like e.g. toluene vapour is admitted in said chamber and after a predetermined period of time the porosity of the thin film is determined by means of at least on ellipsometric measurement. Particularly, the optical characteristics resulting from this in-situ ellipsometry are used to determine the amount of gaseous substance condensed in the pores of the film. These amounts are used to calculate the porosity of the film.Type: GrantFiled: August 16, 2001Date of Patent: August 20, 2002Assignees: Interuniversitair Microelecktronica Centrum, Centre for Advanced Technologies TechnokomInventors: Mikhail Rodionovich Baklanov, Fedor Nikolaevich Dultsev, Konstantin Petrovich Mogilnikov, Karen Maex
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Publication number: 20020066957Abstract: The present invention is related to a metallization structure on a fluorine-containing dielectric and a method for fabrication thereof. This metallization structure comprises a conductive pattern; a fluorine-containing dielectric; and a barrier layer containing a material, i.e. a near noble metal such as Co, Ni, Pt and Pd, said barrier layer comprising at least a first part, being positioned between said fluorine-containing dielectric and said conductive pattern, said first part containing at least a first and a second sub-layer, said first sub-layer contacting said fluorine-containing dielectric and being impermeable for fluorine. Particularly by depositing a layer of said material on a fluorine-containing dielectric, a stable and thin layer of a fluoride of said material is formed in a self-limiting way.Type: ApplicationFiled: August 13, 2001Publication date: June 6, 2002Inventors: Karen Maex, Mikhail Rodionovich Baklanov, Serge Vanhaelemeersch
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Publication number: 20010054306Abstract: The present invention is related to an apparatus and a non-destructive method for determining the porosity of an element, particularly a thin film, formed on a substrate, said substrate being positioned in a pressurized chamber, said chamber being at a predetermined pressure and at a predetermined temperature. According to this method a gaseous substance like e.g. toluene vapour is admitted in said chamber and after a predetermined period of time the porosity of the thin film is determined by means of at least on ellipsometric measurement. Particularly, the optical characteristics resulting from this in-situ ellipsometry are used to determine the amount of gaseous substance condensed in the pores of the film. These amounts are used to calculate the porosity of the film.Type: ApplicationFiled: August 16, 2001Publication date: December 27, 2001Inventors: Mikhail Rodionovich Baklanov, Fedor Nikolaevich Dultsev, Konstantin Petrovich Mogilnikov, Karen Maex
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Patent number: 6323555Abstract: The present invention is related to a metallization structure on a fluorine-containing dielectric and a method for fabrication thereof. This metallization structure comprises a conductive pattern; a fluorine-containing dielectric; and a barrier layer containing a material, i.e. a near noble metal such as Co, Ni, Pt and Pd, said barrier layer comprising at least a first part, being positioned between said fluorine-containing dielectric and said conductive pattern, said first part containing at least a first and a second sub-layer, said first sub-layer contacting said fluorine-containing dielectric and being impermeable for fluorine. Particularly by depositing a layer of said material on a fluorine-containing dielectric, a stable and thin layer of a fluoride of said material is formed in a self-limiting way.Type: GrantFiled: January 27, 1999Date of Patent: November 27, 2001Assignee: Interuniversitiar Microelektronica Centrum (IMEC VZW)Inventors: Karen Maex, Mikhail Rodionovich Baklanov, Serge Vanhaelemeersch
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Patent number: 6319736Abstract: The present invention is related to an apparatus and a non-destructive method for determining the porosity of an element, particularly a thin film, formed on a substrate, said substrate being positioned in a pressurized chamber, said chamber being at a predetermined pressure and at a predetermined temperature. According to this method a gaseous substance like e.g. toluene vapor is admitted in said chamber and after a predetermined period of time the porosity of the thin film is determined by means of at least on ellipsometric measurement. Particularly, the optical characteristics resulting from this in-situ ellipsometry are used to determine the amount of gaseous substance condensed in the pores of the film. These amounts are used to calculate the porosity of the film.Type: GrantFiled: June 19, 2000Date of Patent: November 20, 2001Assignee: Interuniversitair Microelektronica Centrum (IMEC)Inventors: Mikhail Rodionovich Baklanov, Fedor Nikolaevich Dultsev, Konstantin Petrovich Mogilnikov, Karen Maex
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Publication number: 20010026956Abstract: The present invention discloses the formation of a hard mask layer in an organic polymer layer by modifying at least locally the chemical composition of a part of said exposed organic low-k polymer. This modification starts from an exposed surface of the polymer and extends into the polymer thereby increasing the chemical resistance of the modified part of the polymer. As a result, this modified part can be used as a hard mask or an etch stop layer for plasma etching.Type: ApplicationFiled: April 27, 2001Publication date: October 4, 2001Inventors: Mikhail Rodionovich Baklanov, Serge Vanhaelemeersch, Karen Maex, Joost Waterloos, Gillbert Declerck
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Patent number: 6255227Abstract: The present invention relates to methods for controlling the etching rate of CoSi2 layers by adjusting the pH of an HF-based solution to obtain the desired etch rate. The pH of the HF-based solution may be adjusted by adding pH modifying chemicals to the solution. A further aspect of the invention is an improved method for manufacturing Schotky barrier infared detectors employing the controlled etching step. A method for reducing drain induced barrier lowering in an active transistor having a small gate length is also provided.Type: GrantFiled: January 6, 2000Date of Patent: July 3, 2001Assignee: Interuniversitair Microelektronica CentrumInventors: Ricardo Alves Donaton, Karen Irma Josef Maex, Rita Verbeeck, Philippe Jansen, Rita Rooyackers, Ludo Deferm, Mikhail Rodionovich Baklanov
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Patent number: 6245489Abstract: The present invention discloses the formation of a hard mask layer in an organic polymer layer by modifying at least locally the chemical composition of a part of said exposed organic low-k polymer. This modification starts from an exposed surface of the polymer and extends into the polymer thereby increasing the chemical resistance of the modified part of the polymer. As a result, this modified part can be used as a hard mask or an etch stop layer for plasma etching.Type: GrantFiled: May 27, 1998Date of Patent: June 12, 2001Assignee: Imec VZWInventors: Mikhail Rodionovich Baklanov, Serge Vanhaelemeersch, Karen Maex, Joost Waeterloos, Gilbert Declerck
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Patent number: 6153484Abstract: The present invention relates to methods for controlling the etching rate of CoSi.sub.2 layers by adjusting the pH of an HF-based solution to obtain the desired etch rate. The pH of the HF-based solution may be adjusted by adding pH modifying chemicals to the solution. A further aspect of the invention is an improved method for manufacturing Schottky barrier infared detectors employing the controlled etching step. A method for reducing drain induced barrier lowering in an active transistor having a small gate length is also provided.Type: GrantFiled: June 19, 1996Date of Patent: November 28, 2000Assignee: IMEC VZWInventors: Ricardo Alves Donaton, Karen Irma Josef Maex, Rita Verbeeck, Philippe Jansen, Rita Rooyackers, Ludo Deferm, Mikhail Rodionovich Baklanov