Patents by Inventor Mikhail V. Kisin
Mikhail V. Kisin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220262980Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide at least one strain compensation layer and efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.Type: ApplicationFiled: May 2, 2022Publication date: August 18, 2022Applicant: Ostendo Technologies, Inc.Inventors: Hussein El-Ghoroury, Mikhail v. Kisin, Yea-Chuan Milton Yea, Chih-Li Chuang, Jyh-Chia Chen
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Patent number: 11335829Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.Type: GrantFiled: November 10, 2021Date of Patent: May 17, 2022Assignee: Ostendo Technologies, Inc.Inventors: Hussein S. El-Ghoroury, Mikhail V. Kisin, Yea-Chuan Milton Yeh, Chih-Li Chuang, Jyh-Chia Chen
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Patent number: 11329191Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.Type: GrantFiled: November 18, 2021Date of Patent: May 10, 2022Assignee: Ostendo Technologies, inc.Inventors: Hussein S. El-Ghoroury, Mikhail V. Kisin, Yea-Chuan Milton Yeh, Chih-Li Chuang, Jyh-Chia Chen
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Publication number: 20220123170Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.Type: ApplicationFiled: November 18, 2021Publication date: April 21, 2022Inventors: Hussein S. El-Ghoroury, Mikhail V. Kisin, Yea-Chuan Milton Yeh, Chih-Li Chuang, Jyh-Chia Chen
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Publication number: 20220123169Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.Type: ApplicationFiled: November 10, 2021Publication date: April 21, 2022Inventors: Hussein S. El-Ghoroury, Mikhail V. Kisin, Yea-Chuan Milton Yeh, Chih-Li Chuang, Jyh-Chia Chen
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Publication number: 20210343900Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.Type: ApplicationFiled: July 12, 2021Publication date: November 4, 2021Inventors: Hussein S. El-Ghoroury, Mikhail V. Kisin, Yea-Chuan Milton Yeh, Chih-Li Chuang, Jyh-Chia Chen
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Patent number: 11063179Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.Type: GrantFiled: June 3, 2016Date of Patent: July 13, 2021Assignee: Ostendo Technologies, Inc.Inventors: Hussein S. El-Ghoroury, Mikhail V. Kisin, Yea-Chuan Milton Yeh, Chih-Li Chuang, Jyh-Chia Chen
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Patent number: 10418516Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.Type: GrantFiled: May 25, 2018Date of Patent: September 17, 2019Assignee: Ostendo Technologies, Inc.Inventors: Hussein S. El-Ghoroury, Mikhail V. Kisin, Yea-Chuan Milton Yeh, Chih-Li Chuang, Jyh-Chia Chen
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Publication number: 20180323340Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.Type: ApplicationFiled: May 25, 2018Publication date: November 8, 2018Inventors: Hussein S. El-Ghoroury, Mikhail V. Kisin, Yea-Chuan Milton Yeh, Chih-Li Chuang, Jyh-Chia Chen
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Patent number: 9985174Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.Type: GrantFiled: June 3, 2016Date of Patent: May 29, 2018Assignee: Ostendo Technologies, Inc.Inventors: Hussein S. El-Ghoroury, Mikhail V. Kisin, Yea-Chuan Milton Yeh, Chih-Li Chuang, Jyh-Chia Chen
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Publication number: 20160359300Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.Type: ApplicationFiled: June 3, 2016Publication date: December 8, 2016Inventors: Hussein S. El-Ghoroury, Mikhail V. Kisin, Yea-Chuan Milton Yeh, Chih-Li Chuang, Jyh-Chia Chen
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Publication number: 20160359084Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.Type: ApplicationFiled: June 3, 2016Publication date: December 8, 2016Applicant: Ostendo Technologies, Inc.Inventors: Hussein S. El-Ghoroury, Mikhail V. Kisin, Yea-Chuan Milton Yeh, Chih-Li Chuang, Jyh-Chia Chen
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Publication number: 20160359086Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.Type: ApplicationFiled: June 3, 2016Publication date: December 8, 2016Inventors: Hussein S. El-Ghoroury, Mikhail V. Kisin, Yea-Chuan Milton Yeh, Chih-Li Chuang, Jyh-Chia Chen
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Publication number: 20160359299Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.Type: ApplicationFiled: June 3, 2016Publication date: December 8, 2016Inventors: Hussein S. El-Ghoroury, Mikhail V. Kisin, Yea-Chuan Milton Yeh, Chih-Li Chuang, Jyh-Chia Chen
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Patent number: 8571082Abstract: The present invention provides a QCL device with an electrically controlled refractive index through the Stark effect. By changing the electric field in the active area, the energy spacing between the lasing energy levels may be changed and, hence, the effective refractive index in the spectral region near the laser wavelength may be controlled.Type: GrantFiled: January 24, 2011Date of Patent: October 29, 2013Assignees: Maxion Technologies, Inc., The Research Foundation of State University of New York, Board of Regents, The University of Texas SystemInventors: Gregory Belenky, John D. Bruno, Mikhail V. Kisin, Serge Luryi, Leon Shterengas, Sergey Suchalkin, Richard L. Tober, Mikhail Belkin
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Publication number: 20120120972Abstract: The present invention provides a QCL device with an electrically controlled refractive index through the Stark effect. By changing the electric field in the active area, the energy spacing between the lasing energy levels may be changed and, hence, the effective refractive index in the spectral region near the laser wavelength may be controlled.Type: ApplicationFiled: January 24, 2011Publication date: May 17, 2012Inventors: Gregory Belenky, John D. Bruno, Mikhail V. Kisin, Serge Luryi, Leon Shterengas, Sergey Suchalkin, Richard L. Tober, Mikhail Belkin
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Publication number: 20110188528Abstract: Injection efficiency in both polar and non-polar III-nitride light-emitting structures is strongly deteriorated by inhomogeneous population of different quantum wells (QWs) in multiple QW (MQW) active region of the emitter. Inhomogeneous QW population becomes stronger in long-wavelength emitters with deeper active QWs. In both polar and non-polar structures, indium and/or aluminum incorporation into optical waveguide layers and/or barrier layers of the active region, depending on the desired wavelength of the light to be emitted, improves the uniformity of QW population and increases the structure injection efficiency.Type: ApplicationFiled: January 26, 2011Publication date: August 4, 2011Applicant: OSTENDO TECHNOLOGIES, INC.Inventors: Mikhail V. Kisin, Hussein S. El-Ghoroury
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Patent number: 7876795Abstract: A semiconductor light source comprises a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.Type: GrantFiled: August 18, 2005Date of Patent: January 25, 2011Assignees: Maxion Technologies, Inc., The Research Foundation of State University of New YorkInventors: Gregory Belenky, John D. Bruno, Mikhail V. Kisin, Serge Luryi, Leon Shterengas, Sergey Suchalkin, Richard L. Tober