Abstract: A lithographic system for projecting an image onto a workpiece using radiation is provided. The lithographic system includes: a support structure for supporting a workpiece; a radiation source for providing radiation to project an image on the workpiece; a reticle positioned between the radiation source and the workpiece; and a mask positioned adjacent the reticle, the mask being configured to block radiation from the radiation source, the mask including a heat removal apparatus.

Abstract: A lithographic system for projecting an image onto a workpiece using radiation is provided. The lithographic system includes: a support structure for supporting a workpiece; a radiation source for providing radiation to project an image on the workpiece; a reticle positioned between the radiation source and the workpiece; and a mask positioned adjacent the reticle, the mask being configured to block radiation from the radiation source, the mask including a heat removal apparatus.

Abstract: According to an exemplary embodiment of the invention, a method of patterning a photoresist is provided. The method includes selectively illuminating an edge portion of a photoresist using an illumination system to form a patterned portion of the photoresist.

Abstract: A lithographic system for projecting an image onto a workpiece using radiation is provided. The lithographic system includes: a support structure for supporting a workpiece; a radiation source for providing radiation to project an image on the workpiece; a reticle positioned between the radiation source and the workpiece; and a mask positioned adjacent the reticle, the mask being configured to block radiation from the radiation source, the mask including a heat removal apparatus.

Abstract: A lithographic system for projecting an image onto a workpiece using radiation is provided. The lithographic system includes: a support structure for supporting a workpiece; a radiation source for providing radiation to project an image on the workpiece; a reticle positioned between the radiation source and the workpiece; and a mask positioned adjacent the reticle, the mask being configured to block radiation from the radiation source, the mask including a heat removal apparatus.

Abstract: A lithographic system for projecting an image onto a workpiece using radiation is provided. The lithographic system includes: a support structure for supporting a workpiece; a radiation source for providing radiation to project an image on the workpiece; a reticle positioned between the radiation source and the workpiece; and a mask positioned adjacent the reticle, the mask being configured to block radiation from the radiation source, the mask including a heat removal apparatus.

Abstract: A lithographic system for projecting an image onto a workpiece using radiation is provided. The lithographic system includes: a support structure for supporting a workpiece; a radiation source for providing radiation to project an image on the workpiece; a reticle positioned between the radiation source and the workpiece; and a mask positioned adjacent the reticle, the mask being configured to block radiation from the radiation source, the mask including a heat removal apparatus.

Abstract: A correction mask for an optical beam homogenizer includes a lens array. The correction mask is configured to provide a shaped initial beam profile. A subset of a plurality of optical paths between the incoming light beam and the illumination plane is at least partially blocked by the correction mask to provide a further homogenized beam profile having a further reduced light intensity variance with respect to an initial homogenized beam profile. The mask includes a plurality of submasks arranged according to a mask grid layout matching the lens grid layout of the lens array. Each one of the submasks is designed with a specific submask pattern to shape the respective subarea of the initial beam profile passing a specific one of the lenslets.

Abstract: A correction mask for an optical beam homogenizer includes a lens array. The correction mask is configured to provide a shaped initial beam profile. A subset of a plurality of optical paths between the incoming light beam and the illumination plane is at least partially blocked by the correction mask to provide a further homogenized beam profile having a further reduced light intensity variance with respect to an initial homogenized beam profile. The mask includes a plurality of submasks arranged according to a mask grid layout matching the lens grid layout of the lens array. Each one of the submasks is designed with a specific submask pattern to shape the respective subarea of the initial beam profile passing a specific one of the lenslets.