Patents by Inventor Miki Isawa
Miki Isawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10854420Abstract: A pattern evaluation device has measurement or inspection conditions, supplied for the measurement and inspection of a replica produced by transferring a pattern for a semiconductor wafer or the like, which can be easily set, and with which recipes can be easily generated, when measurement and inspection conditions for the semiconductor wafer or the like and recipes in which these conditions are stored have been prepared in advance. The pattern evaluation device in which a pattern formed on the semiconductor wafer is evaluated on the basis of image data or signal waveforms obtained on the basis of beam irradiation or probe scanning of the semiconductor wafer, wherein the device conditions for evaluating the semiconductor wafer are converted to device conditions for evaluating a replica obtained by transferring a part of a pattern of the semiconductor wafer, and the converted device conditions are used to evaluate the replica.Type: GrantFiled: July 22, 2016Date of Patent: December 1, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Miki Isawa, Ayumi Doi, Kazuhisa Hasumi
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Patent number: 10732512Abstract: An image processor, a method for generating a pattern using self-organizing lithographic techniques, and a computer program are provided to achieve image processing suitable for addressing a sample generated by patterning using Directed Self-Assembly (DSA), and the processor, method, and computer program are characterized in that a template for addressing is prepared on the basis of guide pattern data used for patterning by DSA. The above configuration makes it possible to provide an addressing pattern suitable for visual field positioning in measuring or inspecting a pattern formed through the patterning process using DSA.Type: GrantFiled: February 23, 2018Date of Patent: August 4, 2020Assignee: Hitachi High-Tech CorporationInventors: Takumichi Sutani, Miki Isawa, Shunsuke Koshihara, Akiyuki Sugiyama
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Publication number: 20200098543Abstract: Provided is a pattern evaluation device with which measurement or inspection conditions, supplied for the measurement and inspection of a replica produced by transferring a pattern for a semiconductor wafer or the like, can be easily set, and with which recipes can be easily generated, when measurement and inspection conditions for a semiconductor wafer or the like and recipes in which these conditions are stored have been prepared in advance. The pattern evaluation device in which a pattern formed on a sample is evaluated on the basis of image data or signal waveforms obtained on the basis of beam irradiation or probe scanning of the sample, wherein the device conditions for evaluating a semiconductor wafer are converted to device conditions for evaluating a replica obtained by transferring a semiconductor wafer, and the converted device conditions are used to evaluate the replica.Type: ApplicationFiled: July 22, 2016Publication date: March 26, 2020Inventors: Miki ISAWA, Ayumi DOI, Kazuhisa HASUMI
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Patent number: 10545018Abstract: The purpose of the present invention is to provide a pattern measurement device which adequately evaluates a pattern formed by means of a patterning method for forming a pattern that is not in a photomask. In order to fulfil the purpose, the present invention suggests a pattern measurement device provided with a computation device for measuring the dimensions between patterns formed on a sample, wherein: the centroid of the pattern formed on the sample is extracted from data to be measured obtained by irradiating beams; a position alignment process is executed between the extracted centroid and measurement reference data in which a reference functioning as the measurement start point or measurement end point is set; and the dimensions between the measurement start point or the measurement end point of the measurement reference data, which was subjected to position alignment, and the edge or the centroid of the pattern contained in the data to be measured is measured.Type: GrantFiled: November 17, 2014Date of Patent: January 28, 2020Assignee: Hitachi High-Technologies CorporationInventors: Satoru Yamaguchi, Norio Hasegawa, Akiyuki Sugiyama, Miki Isawa, Akihiro Onizawa, Ryuji Mitsuhashi
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Publication number: 20180181009Abstract: An image processor, a method for generating a pattern using self-organizing lithographic techniques, and a computer program are provided to achieve image processing suitable for addressing a sample generated by patterning using Directed Self-Assembly (DSA), and the processor, method, and computer program are characterized in that a template for addressing is prepared on the basis of guide pattern data used for patterning by DSA. The above configuration makes it possible to provide an addressing pattern suitable for visual field positioning in measuring or inspecting a pattern formed through the patterning process using DSA.Type: ApplicationFiled: February 23, 2018Publication date: June 28, 2018Inventors: Takumichi SUTANI, Miki ISAWA, Shunsuke KOSHIHARA, Akiyuki SUGIYAMA
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Patent number: 9831062Abstract: An object of the present invention is to provide a method for pattern measurement and a charged particle radiation device in which a pattern formed by using a DSA technique can be very precisely measured and inspected. According to an aspect for achieving the object, a method for pattern measurement or a charged particle radiation device for realizing the measurement is proposed as follows. A charged particle is radiated to a polymer compound used for a self-organization lithography technique, and a specific polymer is considerably contracted as compared to the other polymer among multiple polymers forming the polymer compound. Thereafter, dimensions between multiple edges of the other polymer are measured, based on a signal obtained by scanning a region including the other polymer with the charged particle beam.Type: GrantFiled: January 22, 2014Date of Patent: November 28, 2017Assignee: Hitachi High-Technologies CorporationInventors: Makoto Suzuki, Satoru Yamaguchi, Kei Sakai, Miki Isawa, Satoshi Takada, Kazuhisa Hasumi, Masami Ikota
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Patent number: 9804107Abstract: The purpose of the present invention is to provide a pattern measurement device for quantitatively evaluating a pattern formed using a directed self-assembly (DSA) method with high accuracy. The present invention is a pattern measurement device for measuring distances between patterns formed in a sample, wherein the centroids of a plurality of patterns included in an image are determined; the inter-centroid distances, and the like, of the plurality of centroids are determined; and on the basis of the inter-centroid distances, and the like, of the plurality of centroids, a pattern meeting a specific condition is distinguished from patterns different from the pattern meeting the specific condition or information is calculated about the number of the patterns meeting the specific condition, the size of an area including the patterns meeting the specific condition, and the number of imaginary lines between the patterns meeting the specific condition.Type: GrantFiled: November 17, 2014Date of Patent: October 31, 2017Assignee: Hitachi High-Technologies CorporationInventors: Akiyuki Sugiyama, Miki Isawa, Satoru Yamaguchi, Motonobu Hommi
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Patent number: 9627171Abstract: An objective of the present invention is to provide a charged particle beam device with which information based on a charged particle which is discharged from a bottom part of high-aspect structure is revealed more than with previous technology. To achieve the objective, proposed is a charged particle beam device comprising: a first orthogonal electromagnetic field generator which deflects charged particles which are discharged from a material; a second orthogonal electromagnetic field generator which further deflects the charged particles which are deflected by the first orthogonal electromagnetic field generator; an aperture forming member having a charged particle beam pass-through aperture; and a third orthogonal electromagnetic field generator which deflects the charged particles which have passed through the aperture forming member.Type: GrantFiled: June 10, 2013Date of Patent: April 18, 2017Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Hiroshi Makino, Hideyuki Kazumi, Minoru Yamazaki, Yuzuru Mizuhara, Miki Isawa
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Patent number: 9589343Abstract: The purpose of the present invention is to provide a pattern measurement device which evaluates quantitatively and with high precision random patterns such as finger print patterns. In order to fulfill this purpose, a pattern measurement device which measures the pattern on a sample on the basis of an image acquired by a charged particle beam is proposed which selectively extracts linear or linearly approximable parts of the pattern on the sample, and outputs at least one of the following: the measurement of the distance between the extracted parts, the ratio of said extracted parts in a prescribed region, and the length of said extracted parts. Further, as a more specific embodiment, a pattern measurement device is proposed which calculates a frequency depending on a distance value between extracted parts, and outputs, as a pattern distance, distance values for which said frequency fulfills a prescribed condition.Type: GrantFiled: August 2, 2013Date of Patent: March 7, 2017Assignee: Hitachi High-Technologies CorporationInventors: Miki Isawa, Kei Sakai, Norio Hasegawa
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Patent number: 9502212Abstract: An object of the present invention is to provide a method and an apparatus capable of measuring a potential of a sample surface by using a charged particle beam, or of detecting a compensation value of a variation in an apparatus condition which changes due to sample charging, by measuring a sample potential caused by irradiation with the charged particle beam. In order to achieve the object, a method and an apparatus are provided in which charged particle beams (2(a), 2(b)) emitted from a sample (23) are deflected by a charged particle deflector (33) in a state in which the sample (23) is irradiated with a charged particle beam (1), and information regarding a sample potential is detected by using a signal obtained at that time.Type: GrantFiled: January 22, 2014Date of Patent: November 22, 2016Assignee: Hitachi High-Technologies CorporationInventors: Yuzuru Mizuhara, Miki Isawa, Minoru Yamazaki, Hitoshi Tamura, Hideyuki Kazumi
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Publication number: 20160320182Abstract: The purpose of the present invention is to provide a pattern measurement device which adequately evaluates a pattern formed by means of a patterning method for forming a pattern that is not in a photomask. In order to fulfil the purpose, the present invention suggests a pattern measurement device provided with a computation device for measuring the dimensions between patterns formed on a sample, wherein: the centroid of the pattern formed on the sample is extracted from data to be measured obtained by irradiating beams; a position alignment process is executed between the extracted centroid and measurement reference data in which a reference functioning as the measurement start point or measurement end point is set; and the dimensions between the measurement start point or the measurement end point of the measurement reference data, which was subjected to position alignment, and the edge or the centroid of the pattern contained in the data to be measured is measured.Type: ApplicationFiled: November 17, 2014Publication date: November 3, 2016Inventors: Satoru YAMAGUCHI, Norio HASEGAWA, Akiyuki SUGIYAMA, Miki ISAWA, Akihiro ONIZAWA, Ryuji MITSUHASHI
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Publication number: 20160313266Abstract: The purpose of the present invention is to provide a pattern measurement device for quantitatively evaluating a pattern formed using a directed self-assembly (DSA) method with high accuracy. The present invention is a pattern measurement device for measuring distances between patterns formed in a sample, wherein the centroids of a plurality of patterns included in an image are determined; the inter-centroid distances, and the like, of the plurality of centroids are determined; and on the basis of the inter-centroid distances, and the like, of the plurality of centroids, a pattern meeting a specific condition is distinguished from patterns different from the pattern meeting the specific condition or information is calculated about the number of the patterns meeting the specific condition, the size of an area including the patterns meeting the specific condition, and the number of imaginary lines between the patterns meeting the specific condition.Type: ApplicationFiled: November 17, 2014Publication date: October 27, 2016Inventors: Akiyuki SUGIYAMA, Miki ISAWA, Satoru YAMAGUCHI, Motonobu HOMMI
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Patent number: 9472376Abstract: An object of the invention is to provide a scanning electron microscope which forms an electric field to lift up, highly efficiently, electrons discharged from a hole bottom or the like even if a sample surface is an electrically conductive material. To achieve the above object, according to the invention, a scanning electron microscope including a deflector which deflects a scanning position of an electron beam, and a sample stage for loading a sample thereon, is proposed. The scanning electron microscope includes a control device which controls the deflector or the sample stage in such a way that before scanning a beam on a measurement target pattern, a lower layer pattern situated in a lower layer of the measurement target pattern undergoes beam irradiation on another pattern situated in the lower layer.Type: GrantFiled: February 18, 2013Date of Patent: October 18, 2016Assignee: Hitachi High-Technologies CorporationInventors: Toshiyuki Yokosuka, Chahn Lee, Hideyuki Kazumi, Hiroshi Makino, Yuzuru Mizuhara, Miki Isawa, Michio Hatano, Yoshinori Momonoi
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Publication number: 20150357158Abstract: An object of the present invention is to provide a method for pattern measurement and a charged particle radiation device in which a pattern formed by using a DSA technique can be very precisely measured and inspected. According to an aspect for achieving the object, a method for pattern measurement or a charged particle radiation device for realizing the measurement is proposed as follows. A charged particle is radiated to a polymer compound used for a self-organization lithography technique, and a specific polymer is considerably contracted as compared to the other polymer among multiple polymers forming the polymer compound. Thereafter, dimensions between multiple edges of the other polymer are measured, based on a signal obtained by scanning a region including the other polymer with the charged particle beam.Type: ApplicationFiled: January 22, 2014Publication date: December 10, 2015Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Makoto SUZUKI, Satoru YAMAGUCHI, Kei SAKAI, Miki ISAWA, Satoshi TAKADA, Kazuhisa HASUMI, Masami IKOTA
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Publication number: 20150357153Abstract: An objective of the present invention is to provide a charged particle beam device with which information based on a charged particle which is discharged from a bottom part of high-aspect structure is revealed more than with previous technology. To achieve the objective, proposed is a charged particle beam device comprising: a first orthogonal electromagnetic field generator which deflects charged particles which are discharged from a material; a second orthogonal electromagnetic field generator which further deflects the charged particles which are deflected by the first orthogonal electromagnetic field generator; an aperture forming member having a charged particle beam pass-through aperture; and a third orthogonal electromagnetic field generator which deflects the charged particles which have passed through the aperture forming member.Type: ApplicationFiled: June 10, 2013Publication date: December 10, 2015Inventors: Hiroshi MAKINO, Hideyuki KAZUMI, Minoru YAMAZAKI, Yuzuru MIZUHARA, Miki ISAWA
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Publication number: 20150348748Abstract: An object of the present invention is to provide a method and an apparatus capable of measuring a potential of a sample surface by using a charged particle beam, or of detecting a compensation value of a variation in an apparatus condition which changes due to sample charging, by measuring a sample potential caused by irradiation with the charged particle beam. In order to achieve the object, a method and an apparatus are provided in which charged particle beams (2(a), 2(b)) emitted from a sample (23) are deflected by a charged particle deflector (33) in a state in which the sample (23) is irradiated with a charged particle beam (1), and information regarding a sample potential is detected by using a signal obtained at that time.Type: ApplicationFiled: January 22, 2014Publication date: December 3, 2015Inventors: Yuzuru MIZUHARA, Miki ISAWA, Minoru YAMAZAKI, Hitoshi TAMURA, Hideyuki KAZUMI
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Publication number: 20150277237Abstract: An image processor, a method for generating a pattern using self-organizing lithographic techniques, and a computer program are provided to achieve image processing suitable for addressing a sample generated by patterning using Directed Self-Assembly (DSA), and the processor, method, and computer program are characterized in that a template for addressing is prepared on the basis of guide pattern data used for patterning by DSA. The above configuration makes it possible to provide an addressing pattern suitable for visual field positioning in measuring or inspecting a pattern formed through the patterning process using DSA.Type: ApplicationFiled: November 14, 2013Publication date: October 1, 2015Inventors: Takumichi Sutani, Miki Isawa, Shunsuke Koshihara, Akiyuki Sugiyama
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Publication number: 20150243008Abstract: The purpose of the present invention is to provide a pattern measurement device which evaluates quantitatively and with high precision random patterns such as finger print patterns. In order to fulfill this purpose, a pattern measurement device which measures the pattern on a sample on the basis of an image acquired by a charged particle beam is proposed which selectively extracts linear or linearly approximable parts of the pattern on the sample, and outputs at least one of the following: the measurement of the distance between the extracted parts, the ratio of said extracted parts in a prescribed region, and the length of said extracted parts. Further, as a more specific embodiment, a pattern measurement device is proposed which calculates a frequency depending on a distance value between extracted parts, and outputs, as a pattern distance, distance values for which said frequency fulfills a prescribed condition.Type: ApplicationFiled: August 2, 2013Publication date: August 27, 2015Inventors: Miki Isawa, Kei Sakai, Norio Hasegawa
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Patent number: 9000365Abstract: Provided are a pattern measuring apparatus and a computer program which determine whether a gap formed in a sample (201) is a core gap (211) or a spacer gap (212). The secondary electron profile of the sample (201) is acquired, the feature quantities of the secondary electron profile at the positions of edges (303, 305) are detected, and based on the detected feature quantities, whether each gap adjacent to each of the edges (303, 305) is the core gap (211) or the spacer gap (212) is determined. Furthermore, the waveform profile of the spacer (207) is previously stored, the secondary electron profile of the sample (201) is acquired, a matching degree of the secondary electron profile and the stored waveform profile at the position of each spacer (207) is detected, and based on the detected matching degree, whether the each gap adjacent to each spacer (207) is the core gap (211) or the spacer gap (212) is determined.Type: GrantFiled: April 7, 2010Date of Patent: April 7, 2015Assignee: Hitachi High-Technologies CorporationInventors: Yuzuru Mochizuki, Maki Tanaka, Miki Isawa, Satoru Yamaguchi
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Publication number: 20150008322Abstract: An object of the invention is to provide a scanning electron microscope which forms an electric field to lift up, highly efficiently, electrons discharged from a hole bottom or the like even if a sample surface is an electrically conductive material. To achieve the above object, according to the invention, a scanning electron microscope including a deflector which deflects a scanning position of an electron beam, and a sample stage for loading a sample thereon, is proposed. The scanning electron microscope includes a control device which controls the deflector or the sample stage in such a way that before scanning a beam on a measurement target pattern, a lower layer pattern situated in a lower layer of the measurement target pattern undergoes beam irradiation on another pattern situated in the lower layer.Type: ApplicationFiled: February 18, 2013Publication date: January 8, 2015Inventors: Toshiyuki Yokosuka, Chahn Lee, Hideyuki Kazumi, Hiroshi Makino, Yuzuru Mizuhara, Miki Isawa, Michio Hatano, Yoshinori Momonoi