Abstract: The present invention provides a dicing die bond film in which peeling electrification hardly occurs and which has good tackiness and workability. The dicing die bond film of the present invention is a dicing die bond film including a dicing film and a thermosetting type die bond film provided thereon, wherein the thermosetting type die bond film contains conductive particles, the volume resistivity of the thermosetting type die bond film is 1×10?6 ?·cm or more and 1×10?3 ?·cm or less, and the tensile storage modulus of the thermosetting type die bond film at ?20° C. before thermal curing is 0.1 to 10 GPa.

Abstract: An electromagnetic wave shielding layer can be provided on the backside of a semiconductor element that is flip-chip connected to an adherend, and a semiconductor device having the electromagnetic wave shielding layer can be manufactured without deteriorating productivity. The present invention provides a film for the backside of a flip-chip type semiconductor to be formed on the backside of a semiconductor element that is flip-chip connected to an adherend, having an adhesive layer and an electromagnetic wave shielding layer.

Abstract: The present invention provides a dicing die bond film in which peeling electrification hardly occurs and which has good tackiness and workability. The dicing die bond film of the present invention is a dicing die bond film including a dicing film and a thermosetting type die bond film provided thereon, wherein the thermosetting type die bond film contains conductive particles, the volume resistivity of the thermosetting type die bond film is 1×10?6 ?·cm or more and 1×10?3 ?·cm or less, and the tensile storage modulus of the thermosetting type die bond film at ?20° C. before thermal curing is 0.1 to 10 GPa.

Abstract: The present invention aims to provides a method of manufacturing a film for a semiconductor device in which a dicing film, a die bond film, and a protecting film are laminated in this order, including the steps of: irradiating the die bond film with a light ray having a wavelength of 400 to 800 nm to detect the position of the die bond film based on the obtained light transmittance and punching the dicing film out based on the detected position of the die bond film, and in which T2/T1 is 0.04 or more, wherein T1 is the light transmittance of the portion where the dicing film and the protecting film are laminated and T2 is the light transmittance of the portion where the dicing film, the die bond film, and the protecting film are laminated.

Abstract: The present invention aims to provides a method of manufacturing a film for a semiconductor device in which a dicing film, a die bond film, and a protecting film are laminated in this order, including the steps of: irradiating the die bond film with a light ray having a wavelength of 400 to 800 nm to detect the position of the die bond film based on the obtained light transmittance and punching the dicing film out based on the detected position of the die bond film, and in which T2/T1 is 0.04 or more, wherein T1 is the light transmittance of the portion where the dicing film and the protecting film are laminated and T2 is the light transmittance of the portion where the dicing film, the die bond film, and the protecting film are laminated.

Abstract: A die-bonding film contains a glycidyl-group-containing acrylic copolymer (a) having a weight-average molecular weight of 500,000 or more and a phenolic resin (b), wherein the weight ratio (x/y) of the content x of the glycidyl-group-containing acrylic copolymer (a) to the content y of the phenolic resin (b) is 5 or more and 30 or less, and the die-bonding film substantially does not contain an epoxy resin having a weight-average molecular weight of 5000 or less. Thus, a die-bonding film having a high reliability is provided by which a sufficient adhering strength and an elastic modulus at a high temperature can be obtained before and after curing; the workability is good; air bubbles (voids) do not stay at the boundary between the die-bonding film and the adherend; and the die-bonding film can withstand a humidity resistance solder reflow test.

Abstract: An electromagnetic wave shielding layer can be provided on the backside of a semiconductor element that is flip-chip connected to an adherend, and a semiconductor device having the electromagnetic wave shielding layer can be manufactured without deteriorating productivity. The present invention provides a film for the backside of a flip-chip type semiconductor to be formed on the backside of a semiconductor element that is flip-chip connected to an adherend, having an adhesive layer and an electromagnetic wave shielding layer.

Abstract: An object of the present invention is to decrease the influence of an electromagnetic wave emitted from one semiconductor chip on other semiconductor chips in the same package, amounted substrate, adjacent devices, and the package. The present invention provides an adhesive film for a semiconductor device having an adhesive layer and an electromagnetic wave shielding layer, in which the attenuation of the electromagnetic wave that penetrates the adhesive film for a semiconductor device is 3 dB or more in at least a portion of the frequency range of 50 MHz to 20 GHz.

Abstract: A semiconductor device having an electromagnetic wave shielding layer can be manufactured without decreasing productivity. The present invention provides a die bond film including an adhesive layer and an electromagnetic wave shielding layer made of a metal foil or a die bond film including an adhesive layer and an electromagnetic wave shielding layer formed by vapor deposition.

Abstract: The present invention provides a dicing die bond film in which peeling electrification hardly occurs and which has good tackiness and workability. The dicing die bond film of the present invention is a dicing die bond film including a dicing film and a thermosetting type die bond film provided thereon, wherein the thermosetting type die bond film contains conductive particles, the volume resistivity of the thermosetting type die bond film is 1×10?6 ?·cm or more and 1×10?3 ?·cm or less, and the tensile storage modulus of the thermosetting type die bond film at ?20° C. before thermal curing is 0.1 to 10 GPa.

Abstract: The present invention provides a film for a semiconductor device that is capable of suppressing the generation of a transfer mark on an adhesive film when a film for a semiconductor device, in which an adhesive film with a dicing sheet obtained by laminating an adhesive film onto a dicing film is laminated onto a cover film leaving a prescribed spacing, is wound up into a roll. It is a film for a semiconductor device in which an adhesive film with a dicing sheet obtained by laminating an adhesive film onto a dicing film is laminated onto a cover film leaving a prescribed spacing, wherein a ratio Ea/Eb of the tensile storage modulus Ea of the adhesive film at 23° C. to the tensile storage modulus Eb of the cover film at 23° C. is in a range of 0.001 to 50.

Abstract: A novel organic non-linear optical material and a device using the same are disclosed. The material hardly makes reversal symmetrical molecular configuration in a bulk state such as a crystal and a thin layer and shows a high non-linear optical effect. A non-linear optical device using the material has an excellent properties. The organic non-linear optical material is comprised of the following compound: ##STR1## wherein R.sub.1, R.sub.3 and R.sub.4 are independently a hydrogen atom, a cyano group, a phenyl group, an amino group, an alkoxy group, an acylamino group, an alkylthio group, an alkyl group, an alkoxycarbonyl group, carbamoyl group or a heterocyclic group, provided that R.sub.3 is allowed to link together with R.sub.4 to form a ring and R.sub.1, R.sub.3 and R.sub.4 are not hydrogen atom at the same time; R.sub.2 is a hydrogen atom, an alkyl group or an acyl group; and said groups represented by R.sub.1, R.sub.2, R.sub.3, R.sub.4 and the ring formed by linking the groups represented by R.sub.

Abstract: A non-linear optical device applicable to use such as the generation of the higher harmonic waves and the parametric amplification of laser beam is disclosed. The device comprises a crystal of a compound represented by the following Formula I: ##STR1## wherein A is an electron attractive group having 0 to 5 carbon atoms; R.sub.1 is a hydrogen atom, an alkyl group or an alkenyl group; R.sub.2 is a hydroxyl group, an acylamino group or a ureido group; and R.sub.3 is a hydrogen atom or a mono-valent substituent.