Abstract: To provide a photoelectric conversion element capable of further improving performance in a photoelectric conversion element using an organic semiconductor material. The photoelectric conversion element includes a first electrode and a second electrode arranged to face each other, and a photoelectric conversion layer 17 provided between the first electrode and the second electrode, in which the photoelectric conversion layer 17 includes a first organic semiconductor material and a second organic semiconductor material, and at least one of the first organic semiconductor material or the second organic semiconductor material is an organic molecule having a HOMO volume fraction of 0.15 or less or a LUMO volume fraction of 0.15 or less.

Abstract: To reduce the dark current ratio. A photoelectric conversion element 10 including an anode 16, a cathode 12, an active layer 14 provided between the anode and the cathode, and at least one electron transportation layer 13 provided between the active layer and the cathode, in which the electron transportation layer contains an insulating material and a semiconductor material; a difference between a work function of the electron transportation layer and a work function of the cathode is 0.88 eV or more; the active layer contains a p-type semiconductor material and an n-type semiconductor material; and a work function of the electron transportation layer (Wf1) and an energy level of a lowest occupied molecular orbital of the n-type semiconductor material (LUMO) satisfy the following Formula (2): |LUMO|?Wf1?0.06 eV??(2).

Abstract: To reduce the dark current ratio. A photoelectric conversion element 10 including an anode 16, a cathode 12, an active layer 14 provided between the anode and the cathode, and at least one electron transportation layer 13 provided between the active layer and the cathode, in which the electron transportation layer contains an insulating material and a semiconductor material; a difference between a work function of the electron transportation layer and a work function of the cathode is 0.88 eV or more; the active layer contains a p-type semiconductor material and an n-type semiconductor material; and a work function of the electron transportation layer (Wf1) and an energy level of a lowest occupied molecular orbital of the n-type semiconductor material (LUMO) satisfy the following Formula (2): |LUMO|?Wf1?0.06 eV??(2).