Patents by Inventor Miki Niwa
Miki Niwa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9018664Abstract: An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900° C. to the semiconductor device and the base.Type: GrantFiled: December 30, 2013Date of Patent: April 28, 2015Assignee: Nichia CorporationInventors: Masafumi Kuramoto, Satoru Ogawa, Miki Niwa
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Patent number: 9011728Abstract: The object of the present invention is to provide a method for producing a conductive material that has a low electric resistivity and that is obtained using an inexpensive and stable conductive material composition. A conductive material having a low electric resistivity can be obtained by a method including the step of heating a conductive material composition that contains at least one of a full-cured or semi-cured thermosetting resin and a thermoplastic resin, as well as silver particles. Such a conductive material is a conductive material that includes fused silver particles, and thermosetting resin fine particles that have an average particle diameter of 0.1 ?m to 10 ?m both inclusive and are dispersed in the fused silver particles. Further, in such a conductive material is a conductive material that includes fused silver particles, and a thermoplastic resin welded among the fused silver particles.Type: GrantFiled: July 21, 2010Date of Patent: April 21, 2015Assignee: Nichia CorporationInventors: Masafumi Kuramoto, Satoru Ogawa, Miki Niwa, Katsuaki Suganuma, Keun-Soo Kim
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Patent number: 8927341Abstract: An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, and bonding the semiconductor element and the base by applying heat having a temperature of 200 to 900° C. to the semiconductor device and the base.Type: GrantFiled: January 28, 2014Date of Patent: January 6, 2015Assignee: Nichia CorporationInventors: Masafumi Kuramoto, Satoru Ogawa, Miki Niwa
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Patent number: 8809218Abstract: There is provided a substance having much higher catalytic activity for a Suzuki-Miyaura coupling reaction than conventional heterogenous catalysts. The present invention provides a zeolite-palladium complex including USY-zeolite and Pd supported on the USY-zeolite, the Pd having a Pd—Pd coordination number of 4 or less and an oxidation number of 0.5 or less.Type: GrantFiled: February 23, 2010Date of Patent: August 19, 2014Assignee: National University Corporation Tottori UniversityInventors: Kazu Okumura, Miki Niwa, Hirosuke Matsui, Yoshinori Enmi, Takuya Tomiyama, Shizuyo Okuda
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Publication number: 20140141550Abstract: An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, and bonding the semiconductor element and the base by applying heat having a temperature of 200 to 900° C. to the semiconductor device and the base.Type: ApplicationFiled: January 28, 2014Publication date: May 22, 2014Applicant: NICHIA CORPORATIONInventors: Masafumi KURAMOTO, Satoru OGAWA, Miki NIWA
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Publication number: 20140110740Abstract: An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900° C. to the semiconductor device and the base.Type: ApplicationFiled: December 30, 2013Publication date: April 24, 2014Applicant: Nichia CorporationInventors: Masafumi KURAMOTO, Satoru OGAWA, Miki NIWA
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Patent number: 8679898Abstract: An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, and bonding the semiconductor element and the base by applying heat having a temperature of 200 to 900° C. to the semiconductor device and the base.Type: GrantFiled: January 22, 2010Date of Patent: March 25, 2014Assignee: Nichia CorporationInventors: Masafumi Kuramoto, Satoru Ogawa, Miki Niwa
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Patent number: 8642392Abstract: An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900° C. to the semiconductor device and the base.Type: GrantFiled: January 22, 2010Date of Patent: February 4, 2014Assignee: Nichia CorporationInventors: Masafumi Kuramoto, Satoru Ogawa, Miki Niwa
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Publication number: 20120059191Abstract: There is provided a substance having much higher catalytic activity for a Suzuki-Miyaura coupling reaction than conventional heterogenous catalysts. The present invention provides a zeolite-palladium complex including USY-zeolite and Pd supported on the USY-zeolite, the Pd having a Pd—Pd coordination number of 4 or less and an oxidation number of 0.5 or less.Type: ApplicationFiled: February 23, 2010Publication date: March 8, 2012Inventors: Kazu Okumura, Miki Niwa, Hirosuke Matsui, Yoshinori Enmi, Takuya Tomiyama, Shizuyo Okuda
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Publication number: 20110186340Abstract: The object of the present invention is to provide a method for producing a conductive material that has a low electric resistivity and that is obtained using an inexpensive and stable conductive material composition. A conductive material having a low electric resistivity can be obtained by a method including the step of heating a conductive material composition that contains at least one of a full-cured or semi-cured thermosetting resin and a thermoplastic resin, as well as silver particles. Such a conductive material is a conductive material that includes fused silver particles, and thermosetting resin fine particles that have an average particle diameter of 0.1 ?m to 10 ?m both inclusive and are dispersed in the fused silver particles. Further, in such a conductive material is a conductive material that includes fused silver particles, and a thermoplastic resin welded among the fused silver particles.Type: ApplicationFiled: July 21, 2010Publication date: August 4, 2011Applicant: NICHIA CORPORATIONInventors: Masafumi Kuramoto, Satoru Ogawa, Miki Niwa, Katsuaki Suganuma, Keun-Soo Kim
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Publication number: 20100187563Abstract: An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900° C. to the semiconductor device and the base.Type: ApplicationFiled: January 22, 2010Publication date: July 29, 2010Inventors: Masafumi Kuramoto, Satoru Ogawa, Miki Niwa
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Publication number: 20100190298Abstract: An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, and bonding the semiconductor element and the base by applying heat having a temperature of 200 to 900° C. to the semiconductor device and the base.Type: ApplicationFiled: January 22, 2010Publication date: July 29, 2010Inventors: Masafumi KURAMOTO, Satoru Ogawa, Miki Niwa
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Patent number: 5466483Abstract: A method for producing a silica mask on metal oxide surface is disclosed. Benzaldehyde is adsorbed on neutral or weak alkaline metal oxide surface, and then tetra-methoxy silane is deposited. The tetra-methoxy silane is hydrolyzed by water vapor into silica and the adsorbed benzaldehyde is removed by NH3 as benzo-nitrile. Thus a silica mask is produced on the metal oxide surface, and the mask has vacancies corresponding to the removed benzaldehyde. The vacancies act as the adsorption sites for shape selective adsorption.Type: GrantFiled: June 15, 1994Date of Patent: November 14, 1995Assignees: Miki Niwa, Figaro Engineering Inc.Inventors: Miki Niwa, Nobuaki Kodakari, Hisato Funabiki, Naonobu Katada