Abstract: A refrigerant recovery management system includes a display and a computer. The computer executes a data input program to present a screen on the display. The screen is configured for a user to input information regarding refrigerant that has been recovered from refrigerant use equipment and is to be sent to a refrigerant treatment practitioner that conducts a refrigerant treatment on the refrigerant.

Abstract: A refrigerant recovery management system includes a display and a computer. The computer executes a data input program to present a screen on the display. The screen is configured for a user to input information regarding refrigerant that has been recovered from refrigerant use equipment and is to be sent to a refrigerant treatment practitioner that conducts a refrigerant treatment on the refrigerant.

Abstract: A refrigerant recovery management system includes a first generation unit and a second generation unit. The first generation unit generates first information to send a refrigerant recovered from refrigerant-use equipment to a refrigerant treatment practitioner that conducts refrigerant treatment on the refrigerant. The second generation unit generates second information on the refrigerant treatment, to report the refrigerant treatment to a manager that manages refrigerant recovery.

Abstract: A refrigerant recovery management system includes a first generation unit and a second generation unit. The first generation unit generates first information to send a refrigerant recovered from refrigerant-use equipment to a refrigerant treatment practitioner that conducts refrigerant treatment on the refrigerant. The second generation unit generates second information on the refrigerant treatment, to report the refrigerant treatment to a manager that manages refrigerant recovery.

Abstract: A high-resistance region is formed right under a seal ring by irradiating a semiconductor substrate with hydrogen ions or helium ions. The high-resistance region has a greater thickness than an isolation insulating layer formed as a shallow trench isolation (STI) region on the surface of the semiconductor substrate. As a result, a semiconductor integrated circuit including a seal ring achieving excellent high-frequency isolation is provided.

Abstract: The present invention aims at providing a semiconductor device that can prevent quality degradation of a signal caused by noise, reduce a malfunction of a circuit caused by latch-up, and secure favorable isolation, and the semiconductor device includes: a first layer with a resistivity higher than 10·cm and lower than 1 k·cm which is formed in a semiconductor substrate; a second layer formed on a surface of the semiconductor substrate so as to be located above the first layer; two semiconductor devices formed in the second layer or on the second layer; and a trench-type insulating region which is located between the two semiconductor devices, is formed in the semiconductor substrate so as to reach the first layer from the surface of the semiconductor substrate, and electrically isolates the two semiconductor devices.

Abstract: The switching operation of a high frequency switch connected in series downstream from the amplifier circuit produces a load variation on the amplifier circuit, and serially connecting the amplifier circuit and high frequency switch causes a drop in gain due to an in-band mismatch. An amplifier circuit is connected to the input pin for input a high frequency signal, and the output of the amplifier circuit branches to serially connected resistances. An RC filter composed of a resistance and a capacitance is parallel connected between the resistances and the downstream high frequency switches. Input pins for inputting a high frequency signal are connected to the gates of the high frequency switches. Capacitances are parallel connected downstream from the high frequency switches, forming a switched capacitor circuit connected to the output pins.