Abstract: A transmission method simultaneously transmitting a first modulated signal and a second modulated signal at a common frequency performs precoding on both signals using a fixed precoding matrix and regularly changes the phase of at least one of the signals, thereby improving received data signal quality for a reception device.

Abstract: A transmitting method includes: configuring a frame using a plurality of orthogonal frequency-division multiplexing (OFDM) symbols, by allocating time resources and frequency resources to a plurality of transmission data; and transmitting the frame, wherein the frame includes a first period in which a preamble which includes information on a frame configuration of the frame is transmitted, and a second period in which the plurality of transmission data are transmitted by at least one of time division and frequency division, and among the plurality of OFDM symbols, OFDM symbols included in the second period include pilot symbols arranged along a time axis with a predetermined spacing therebetween, and a predetermined number of data symbols.

Abstract: An OFDM transmitter and an OFDM receiver respectively transmit and receive N (N?2, N is an integer) control symbols. For each control symbol, a guard interval time-domain signal is, for example, identical to a signal obtained by frequency-shifting at least a portion of a useful symbol time-domain signal by an amount different from any other symbol, or to a signal obtained by frequency-shifting one or both of a portion and a span of a useful symbol interval time-domain signal different from any other symbol by a predetermined amount.

Abstract: A transmission device includes: a weighting synthesizer that generates a first precoded signal and a second precoded signal; a first pilot inserter that inserts a pilot signal into the first precoded signal; a phase changer that applies a phase change of i×?? to the second precoded signal, where i is a symbol number and an integer that is greater than or equal to 0; an inserter that inserts a pilot signal into the phase-changed second precoded signal; and a phase changer that applies a phase change to the phase-changed and pilot-signal-inserted second precoded signal. ?? satisfies ?/2 radians<??<? radians or ? radians<??<3?/2 radians.

Abstract: A transmission method for transmitting an emergency warning signal, pertaining to one aspect of the present disclosure, includes: generating control information, the control information including a flag indicating either presence or absence of information related to a region and, when the flag indicates presence, information related to the region; acquiring information related to emergency warning content; and generating the emergency warning signal including the control information and the information related to the emergency warning content. Thus, emergency warning (early warning) information can be transmitted with greater precision.

Abstract: A transmitting method includes: configuring a frame using a plurality of orthogonal frequency-division multiplexing (OFDM) symbols, by allocating a plurality of transmission data to a plurality of areas; and transmitting the frame. The plurality of areas are each identified by at least one time resource among resources and at least one frequency resource among frequency resources. The frame includes a first period in which a preamble is transmitted, and a second period in which the plurality of transmission data are transmitted by at least one of time division and frequency division. The second period includes a first area, and the first area includes a data symbol generated from first transmission data, a data symbol generated from second transmission data and subsequent to the data symbol generated from the first transmission data, and a dummy symbol subsequent to the data symbol generated from the second transmission data.

Abstract: Provided are a frame configuring unit configured to configure a frame using a plurality of orthogonal frequency-division multiplexing (OFDM) symbols, by allocating time resources and frequency resources to a plurality of transmission data, and a transmitter which transmits the frame. The frame includes a first period in which a preamble which includes information on a frame configuration of the frame is transmitted, a second period in which a plurality of transmission data are transmitted by time division, a third period in which a plurality of transmission data are transmitted by frequency division, and a fourth period in which a plurality of transmission data are transmitted by time division and frequency division.

Abstract: A transmission method simultaneously transmitting a first modulated signal and a second modulated signal at a common frequency performs precoding on both signals using a fixed precoding matrix and regularly changes the phase of at least one of the signals, thereby improving received data signal quality for a reception device.

Abstract: An encoder outputs a first bit sequence having N bits. A mapper generates a first complex signal s1 and a second complex signal s2 with use of bit sequence having X+Y bits included in an input second bit sequence, where X indicates the number of bits used to generate the first complex signal s1, and Y indicates the number of bits used to generate the second complex signal s2. A bit length adjuster is provided after the encoder, and performs bit length adjustment on the first bit sequence such that the second bit sequence has a bit length that is a multiple of X+Y, and outputs the first bit sequence after the bit length adjustment as the second bit sequence. As a result, a problem between a codeword length of a block code and the number of bits necessary to perform mapping by a set of modulation schemes is solved.

Abstract: One coding scheme is selected from a plurality of coding schemes, an information sequence is encoded by using the selected coding scheme, and an obtained encoded sequence is modulated to obtain a modulated signal. The obtained modulated signal is subjected to a phase change and is transmitted. The plurality of coding schemes include at least a first coding scheme and a second coding scheme. The first coding scheme is a coding scheme with a first coding rate for forming a generated first codeword as a first encoded sequence by using a first parity check matrix. The second coding scheme is a coding scheme with a second coding rate obtained after puncturing processing, for generating a second encoded sequence by performing the puncturing processing on a generated second codeword by using a second parity check matrix different from the first parity check matrix. The number of bits of the first encoded sequence is equal to the number of bits of the second encoded sequence.

Abstract: A transmission method simultaneously transmitting a first modulated signal and a second modulated signal at a common frequency performs precoding on both signals using a fixed precoding matrix and regularly changes the phase of at least one of the signals, thereby improving received data signal quality for a reception device.

Abstract: An A1 pad (11) is provided on a field oxide film isolation (5). The A1 pad (11) is electrically connected to a gate electrode (7) with an A1 wiring pattern (10) and the like. In measurement, a probe (3) comes into contact with the A1 pad (11) to apply a voltage thereto. The probe (3) does not come into direct contact with the gate electrode (7), and therefore no stress is applied to a region below a gate insulation film (6) in which a depletion layer is to be created. With this structure, more accurate result is obtained in a test of estimating defects at an isolation edge using a C-t measurement method.

Abstract: A semiconductor device is obtained in which initial breakdown voltage of an insulating film is improved. On a silicon substrate, an insulating film is provided which is not more than 100 .ANG. in thickness. An electrode is provided on the silicon substrate, with the insulating film positioned therebetween. Oxygen concentration in the substrate is set to be not more than 1.times.10.sup.18 atoms/cm.sup.3 by old ASTM value.

Abstract: It is an object to obtain evaluation results with a dielectric film evaluating test structure which are close to those with an actual device. Gate electrodes (6A) are provided in a dielectric film evaluating test structure. In the gate electrodes 6A, openings (20) are formed on a gate insulator film (5) by etching, or the like.

Abstract: An apparatus for measuring an electrical characteristic of a semiconductor device, particularly for determining the dependence of leakage current of the semiconductor device with time or after a stress is applied to the semiconductor device. An accumulator counts pulses of an internal clock thereby separately determining the time during which a stress is applied and the time during which a measurement is made. These two times are recorded with the measured characteristic, such as leakage current. The measured characteristic is plotted on the basis of the duration of the applied stress and duration of the measurement and displayed.

Abstract: A superlattice semiconductor device comprises superlattice layers (4a, 4a', 5a) stacked on the whole surface of a trench (20) formed in a semiconductor substrate or on the whole surface of a projection (30) extending from a surface of the semiconductor substrate.

Abstract: An accurate dielectric breakdown prediction method and a prediction method in which accurate time dependent dielectric breakdown (TDDB) characteristics can be obtained on the basis of dielectric breakdown prediction by a step stress method are provided. In this method, dielectric breakdown is predicted on the basis of a plurality of reference currents in accordance with an applied voltage, or a reference current I.sub.cr is varied as the function of the applied voltage. In the step stress TDDB prediction, a Chen-Holland-Hu model or improved Chen-Holland-Hu model is employed. Since TDDB characteristics can be obtained from only dielectric breakdown prediction, this method is advantageous for early reliability prediction.

Abstract: An accurate dielectric breakdown prediction method and a prediction method in which accurate time dependent dielectric breakdown (TDDB) characteristics can be obtained on the basis of dielectric breakdown prediction by a step stress method are provided. In this method, dielectric breakdown is predicted on the basis of a plurality of reference currents in accordance with an applied voltage, or a reference current I.sub.cr is varied as the function of the applied voltage. In the step stress TDDB prediction, a Chen-Holland-Hu model or improved Chen-Holland-Hu model is employed. Since TDDB characteristics can be obtained from only dielectric breakdown prediction, this method is advantageous for early reliability prediction.

Abstract: A flat band voltage of a MIS structure is determined by measuring high-frequency C-V characteristics thereof, and a surface potential is calculated by the definite integral processing as a function of the flat band voltage. Ideal C-V characteristics of the MIS structure are determined from the surface potential. By comparing measured low-frequency or quasi-static C-V characteristics with the ideal C-V characteristics, the distribution of an interface state density is determined. Thus, the flat band voltage of an ideal C-V curve coincides with the flat band voltage of a low-frequency or quasi-static C-V curve, so that the interface state density distribution in the MIS structure can be accurately measured.

Abstract: A solid-state image sensing device has an overflow drain structure for purging superfluous charges. The overflow drain structure includes a gate electrode (34), channel regions (35), and a drain region (32) formed inside each groove (26) formed on a main surface of a semiconductor substrate (6). Optoelectro transducers (4) are formed on main surface regions of the semiconductor substrate continuous with each groove. The drain region is formed on side walls and a bottom wall of each groove by oblique ion implantation. The overflow drain structure formed inside the groove occupies a reduced area on the main surface of the semiconductor substrate and increases its opening ratio.