Patents by Inventor Mikihiro TAKASAKI

Mikihiro TAKASAKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240141230
    Abstract: An object of the present invention is to provide a quantum dot and a method for manufacturing a quantum dot capable of enhancing the EQE. A method for manufacturing the quantum dot of the present invention includes steps of: generating a core and coating a shell on a surface of the core, wherein in the step of coating the shell, an acidic compound and a zinc halide compound are blended in a shell raw material. In the present invention, the step of coating the shell is divided into at least a first half and a second half. In the first half, a shell raw material in which the acidic compound is blended and the zinc halide compound is not blended is used, while in the second half, it is preferable that the shell is coated a plurality of times using the shell raw material in which both the acidic compound and the zinc halide compound are blended.
    Type: Application
    Filed: February 25, 2022
    Publication date: May 2, 2024
    Applicant: NS MATERIALS INC.
    Inventors: Mikihiro TAKASAKI, Yuka TAKAMIZUMA, Hironori MATSUZAWA
  • Patent number: 11952522
    Abstract: An object is to provide a quantum dot that has a narrow fluorescence half-width and a high fluorescence quantum yield, and emits blue fluorescence. A quantum dot (5) according to the present invention includes at least Zn and Se and does not include Cd, and has a particle diameter of 5 nm or more and 20 nm or less. In addition, the quantum dot (5) according to the present invention includes at least Zn and Se and does not include Cd, and has a fluorescence quantum yield of 5% or more and a fluorescence half-width of 25 nm or less. In the present invention, the fluorescence lifetime can be made 50 ns or less.
    Type: Grant
    Filed: September 16, 2020
    Date of Patent: April 9, 2024
    Assignee: NS MATERIALS INC.
    Inventors: Soichiro Nikata, Yuko Ogura, Mikihiro Takasaki, Yuka Takamizuma
  • Publication number: 20240079518
    Abstract: An object of the present invention is to provide a method for manufacturing quantum dots capable of containing a large amount of Zn on a surface thereof, and a quantum dot. A method for manufacturing quantum dots of the present invention includes a step of producing a core containing at least Ag, Ga, and S or Ag, Ga, and Se, and a step of coating a surface of the core with a shell, and in the step of coating with the shell, the surface of the core is coated with GaS, and then Zn is added. It is preferable that the surface of the core is coated with ZnS after being coated with GaS. It is preferable that the core and the shell do not contain Cd and In.
    Type: Application
    Filed: December 24, 2021
    Publication date: March 7, 2024
    Applicant: NS MATERIALS INC.
    Inventors: Akio MISHIMA, Soichiro NIKATA, Vit KALOUSEK, Toshiaki SHIMASAKI, Yuko OGURA, Mikihiro TAKASAKI, Shogo UEDA, Yuya ASHIMURA
  • Publication number: 20230232647
    Abstract: A quantum dot (QD) dispersion solution includes QD phosphor particles, ligands, and a solvent. Each ligand includes a thiol group and at least one functional group of ester groups and ether groups. The solvent is propylene glycol monomethyl ether acetate.
    Type: Application
    Filed: July 3, 2020
    Publication date: July 20, 2023
    Inventors: Masaki YAMAMOTO, Kazuki GOTO, Yuma YAGUCHI, Soichiro NIKATA, Yuko OGURA, Masanori TANAKA, Yuka TAKAMIZUMA, Tetsuji ITO, Mikihiro TAKASAKI
  • Publication number: 20210371744
    Abstract: An object is to provide a quantum dot that has a narrow fluorescence half-width and a high fluorescence quantum yield, and emits blue fluorescence. A quantum dot (5) according to the present invention includes at least Zn and Se and does not include Cd, and has a particle diameter of 5 nm or more and 20 nm or less. In addition, the quantum dot (5) according to the present invention includes at least Zn and Se and does not include Cd, and has a fluorescence quantum yield of 5% or more and a fluorescence half-width of 25 nm or less. In the present invention, the fluorescence lifetime can be made 50 ns or less.
    Type: Application
    Filed: September 16, 2020
    Publication date: December 2, 2021
    Applicant: NS Materials Inc.
    Inventors: Soichiro NIKATA, Yuko OGURA, Mikihiro TAKASAKI, Yuka TAKAMIZUMA