Abstract: There is provided a surface emitting laser that can suppress position shift between the center of a current constriction region and the center of a lens-shaped part in plan view. The surface emitting laser according to the present technology includes: first and second reflection mirrors; and a semiconductor structure that is disposed between the first and second reflection mirrors, and the semiconductor structure internally includes a convex-shaped part to which a current constriction region is set, and that protrudes toward a side of the second reflection mirror, and includes a lens-shaped part that meets the convex-shaped part on a top layer on the side of the second reflection mirror. According to the present technology, it is possible to provide the surface emitting laser that can suppress position shift between the center of the current constriction region and the center of the lens-shaped part in plan view.

Abstract: The present technology provides a surface emitting laser that can achieve a high output while suppressing an increase in manufacturing cost, and includes a current constriction region. The surface emitting laser according to the present technology includes: first and second reflection mirrors that are mutually laminated; and a middle part that is disposed between the first and second reflection mirrors, the middle part has a laminated structure formed by laminating a plurality of semiconductor structures including each of a mutually laminated active layer and tunnel junction layer as an intermediate layer, and a peripheral part of at least the tunnel junction layer of the at least one semiconductor structure has higher resistance than resistance of a center part. The surface emitting laser according to the present technology can provide the surface emitting laser that can achieve a high output while suppressing an increase in manufacturing cost, and includes a current constriction region.

Abstract: A surface emitting laser that allows for improved heat dissipation is provided. The surface emitting laser according to the present technology includes a semiconductor multilayer film reflector, a reflector, an active layer provided between the semiconductor multilayer film reflector and the reflector, a metal film provided at a back surface of the semiconductor multilayer film reflector which is a surface on an opposite side to the side of the active layer or having a part provided on a virtual surface including the back surface on the opposite side to the side of the active layer and a further part provided in and/or around the semiconductor multilayer film reflector. According to the present technology a surface emitting laser that allows for improved heat dissipation can be provided.

Abstract: A surface emitting device includes a semiconductor layer including a first crystal material, a reflection layer formed on the semiconductor layer, including a second crystal material of which a lattice constant or a crystal structure is different from the first crystal material, and having a mesa shape, and a light constriction region that is formed in a portion of the reflection layer and controls optical confinement.

Abstract: A surface emitting device according to an embodiment of the present disclosure includes: a first reflective layer; a first semiconductor layer of a first conductive type, the first semiconductor layer being stacked on the first reflective layer; an active layer stacked on the first semiconductor layer; a second semiconductor layer of a second conductive type that is a conductive type opposite to the first conductive type, the second semiconductor layer being stacked on the active layer; a tunnel junction layer stacked on the second semiconductor layer; a third semiconductor layer of the first conductive type, the third semiconductor layer being stacked on the tunnel junction layer; a second reflective layer stacked on the third semiconductor layer, at a side opposite to a side of the first reflective layer; a dielectric layer formed, through non-selective oxidation, between the second semiconductor layer and the third semiconductor layer or between the third semiconductor layer and the second reflective layer

Abstract: To provide a surface-emitting laser that can achieve further reduction of diffraction loss, further improvement of heat dissipation, further improvement of yield, and further improvement of reliability. To provide a surface-emitting laser including a substrate and a vertical resonator structure formed on the substrate, in which the vertical resonator structure includes at least one element selected from the group consisting of In, Ga, Al, N, As, and P, and includes at least an active layer, an upper DBR layer, a lower DBR layer, the upper DBR layer and the lower DBR layer are formed with the active layer interposed therebetween, and the lower DBR layer includes at least one transparent conductive layer that contains a transparent conductive material including a non III-V semiconductor.

Abstract: The present technology provides a surface emitting laser capable of performing current confinement at least in a tunnel junction layer while suppressing the characteristic change of the tunnel junction layer. The surface emitting laser according to the present technology includes: first and second reflectors; and a resonator disposed between the first and second reflectors, the resonator including an active layer and a tunnel junction layer, in which, in the resonator, a peripheral portion has higher resistance than a central portion at least in an entire region in a thickness direction of the tunnel junction layer. According to the surface emitting laser according to the present technology, it is possible to provide a surface emitting laser capable of performing current confinement at least in a tunnel junction layer while suppressing the characteristic change of the tunnel junction layer.

Abstract: The present technology provides a surface emitting laser capable of improving flatness of a surface of a buried layer while reducing diffraction loss of light in the buried layer. The surface emitting laser according to present technology includes a first structure including a first multilayer film reflector, a second structure including a second multilayer film reflector, and a resonator disposed between the first and second structures, in which the resonator includes an active layer, a tunnel junction layer disposed between the first structure and the active layer and having a mesa and an adjacent region adjacent to the mesa, and a buried layer that buries a periphery of the mesa and a periphery of the adjacent region, and an interval between the mesa and the adjacent region is less than or equal to 30 ?m.

Abstract: [Object] To provide a vertical cavity surface emitting laser element and an electronic apparatus that have high light emission efficiency. [Solving Means] A vertical cavity surface emitting laser element according to the present technology includes: an active layer; a first cladding layer; and an intermediate layer. The first cladding layer is provided on the active layer. The intermediate layer is provided on the first cladding layer, electrons in the intermediate layer having potential higher than potential of electrons in the first cladding layer, holes in the intermediate layer having potential higher than potential of holes in the first cladding layer.

Abstract: [Object] To provide a vertical cavity surface emitting laser device having a concave mirror structure and excellent polarization controllability. [Solving Means] A vertical cavity surface emitting laser device according to the present technology includes: a first light-reflecting layer; a second light-reflecting layer; and a stacked body. The stacked body includes a first semiconductor layer, a second semiconductor layer, and an active layer, and is disposed between the first light-reflecting layer and the second light-reflecting layer. The stacked body has a current confinement structure for confining a current and forming a current injection region where a current concentrates. The first light-reflecting layer includes a concave mirror having a concave surface on a side of the stacked body and a convex surface on a side opposite to the stacked body.

Abstract: A display unit including: a first substrate and a second substrate that are disposed to face each other; a first organic insulating layer on the first substrate; a plurality of light-emitting elements arrayed in a display region, the display region being on the first organic insulating layer and facing the second substrate; and a first moisture-proof film covering the first organic insulating layer in a peripheral region, the peripheral region being provided on the first substrate and surrounding the display region.

Abstract: [Object] To provide a vertical cavity surface emitting laser device that is excellent in producibility and capable of reducing the production cost and a method of producing the vertical cavity surface emitting laser device. [Solving Means] A vertical cavity surface emitting laser device (100) according to the present technology includes: a first reflection mirror (103); a second reflection mirror (109); a first semiconductor layer (104); a second semiconductor layer (106); a tunnel junction layer (107); and a light-emitting layer (105), the vertical cavity surface emitting laser device (100) having a mesa structure (M) that has a current injection region where a current passing through an inner peripheral region and flowing into the light-emitting layer (105) concentrates.

Abstract: A light emitting element according to the present disclosure includes: a laminated structure 20 in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are laminated; a first light reflecting layer 41 formed on a first surface side of the first compound semiconductor layer 21; a second light reflecting layer 42 formed on a second surface side of the second compound semiconductor layer 22; a first electrode 31 electrically connected to the first compound semiconductor layer 21; and a second electrode 32 electrically connected to the second compound semiconductor layer 22, a current confinement region 52 that controls an inflow of a current to the active layer 23 is provided, and when an axis in a thickness direction of the laminated structure 20 passing through a center of a current injection region 51 surrounded by the current confinement region 52 is defined as a Z axis, a direction orthogonal to the Z axis is defined as an X direction, and a directi

Abstract: A display unit including a first substrate and a second substrate that are disposed to face each other, a first organic insulating layer on the first substrate, a plurality of light-emitting elements arrayed in a display region, the display region on the first organic insulating layer and facing the second substrate and a first moisture-proof film covering the first organic insulating layer in a peripheral region, in which the peripheral region is provided on the first substrate and surrounds the display region.

Abstract: [Object] To provide a vertical cavity surface emitting laser element that has excellent producibility and is suitable for high output and a method of producing the vertical cavity surface emitting laser element. [Solving Means] A vertical cavity surface emitting laser element according to the present technology includes: a first DBR; a second BR; an active layer; and a tunnel junction layer. The first DBR reflects light of a specific wavelength. The second DBR reflects light of the wavelength. The active layer is disposed between the first DBR and the second DBR. The tunnel junction layer is disposed between the first DBR and the active layer and forms a tunnel junction.

Abstract: A light emitting element (10A) of the present disclosure includes: a stacked structure (20) in which a first compound semiconductor layer (21) having a first surface (21a) and a second surface (21b), an active layer (23), and a second compound semiconductor layer (22) having a first surface (22a) and a second surface (22b) are stacked; a first light reflecting layer (41) formed on a first surface side of the first compound semiconductor layer (21) and having a convex shape in a direction away from the active layer (23); and a second light reflecting layer (42) formed on a second surface side of the second compound semiconductor layer (22) and having a flat shape, in which a partition wall (24) extending in a stacking direction of the stacked structure (20) is formed so as to surround the first light reflecting layer (41).

Abstract: [Object] To provide a vertical cavity surface emitting laser element that has low thermal resistance and is capable of operating at high temperature, a vertical cavity surface emitting laser element array, a vertical cavity surface emitting laser module, and a method of producing a vertical cavity surface emitting laser element. [Solving Means] A vertical cavity surface emitting laser element (100) according to the present technology includes: a first substrate (110); a second substrate (120); a first DBR layer (131); and a second DBR layer (132). The first substrate (110) is formed of a first material and includes an active layer (115). The second substrate (120) is formed of a second material and is bonded to the first substrate (110), the second material causing light having a specific wavelength to be transmitted therethrough and being different from that of the first substrate (110).

Abstract: A light emitting element array includes a plurality of light emitting elements 10A arranged. Each light emitting element 10A includes: a stacked structure 20 including a stack of a first compound semiconductor layer 21 having a first surface 21a and a second surface 21b, an active layer 23 facing the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 having a first surface 22a and a second surface 22b; a first light reflection layer 41 formed on a base part surface 90 located on a first surface side of the first compound semiconductor layer 21; and a second light reflection layer 42 formed on a second surface side of the second compound semiconductor layer 22 and having a flat shape. The base part surface 90 extends to a peripheral region 99 surrounded by the plurality of light emitting elements. The base part surface 90 has a concavo-convex shape, and is differentiable.

Abstract: A display unit including a first substrate and a second substrate that are disposed to face each other, a first organic insulating layer on the first substrate, a plurality of light-emitting elements arrayed in a display region, the display region on the first organic insulating layer and facing the second substrate and a first moisture-proof film covering the first organic insulating layer in a peripheral region, in which the peripheral region is provided on the first substrate and surrounds the display region.

Abstract: A display unit including a first substrate and a second substrate that are disposed to face each other, a first organic insulating layer on the first substrate, a plurality of light-emitting elements arrayed in a display region, the display region on the first organic insulating layer and facing the second substrate and a first moisture-proof film covering the first organic insulating layer in a peripheral region, in which the peripheral region is provided on the first substrate and surrounds the display region.