Patents by Inventor Mikihito SUZUKI

Mikihito SUZUKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING POWER SEMICONDUCTOR DEVICE
    Publication number: 20230268398
    Abstract: In an RFC diode, a semiconductor substrate includes an n? drift layer, an n buffer layer, and a diffusion layer provided between and in contact with the n buffer layer and a second metal layer. The diffusion layer includes an n+ cathode layer provided in contact with the n buffer layer and the second metal layer in a diode region. The n+ cathode layer includes a first n+ cathode layer in contact with the second metal layer and a second n+ cathode layer provided between the first n+ cathode layer and the n buffer layer in contact with the n buffer layer. Crystal defect density of the first n+ cathode layer is higher than crystal defect density of another diffusion layer.
    Type: Application
    Filed: December 6, 2022
    Publication date: August 24, 2023
    Applicant: Mitsubishi Electric Corporation
    Inventors: Katsumi NAKAMURA, Naoyuki TAKEDA, Mikihito SUZUKI, Koji TANAKA