Abstract: In a plasma processing apparatus, a gas to be activated into a plasma is introduced into a plasma formation chamber through a gas introducing pipe. Input microwave energy from a microwave source is also supplied to the plasma formation chamber, so that the introduced gas is activated into the plasma by electron cyclotron resonance. The input microwave energy in a TE mode from the microwave source is received by a tapered waveguide in which a dielectric plate is accommodated, so that at least a part of the input microwave energy is transformed into microwave energy in a TM mode or hybrid mode having an electric field component in the direction of the propagation of the input microwave. Microwave energy in both the modes is introduced into the plasma formation chamber through a microwave introducing window.

Abstract: A thin film which becomes a membrane is formed over one major surface of a substrate by a plasma deposition process utilizing microwave electron cyclotron resonance. The substrate is then removed, other than a portion of the substrate which remains as a frame, so as to form a membrane structure. A dense and high quality membrane is formed at a low temperature and the internal stress of the membrane controlled by varying the conditions under which the plasma deposition process is carried out and by heat treating the thin film after its formation.

Abstract: There is disclosed a soft x-ray source comprising (a) a substrate formed of a thermally conductive material, such as copper or a copper alloy, which tends to generate predominantly hard x-rays upon the collision of an electron beam, (b) an intermediate layer formed on the substrate, the intermediate layer being at least one of rhodium, silver, palladium, and molybdenum, and (c) a silicon film formed on the intermediate layer. There is also disclosed an x-ray lithographic apparatus comprising (a) an electron beam source, (b) the soft x-ray source described above, and (c) means for irradiating an object with the emitted soft x-rays. The method for manufacturing the soft x-ray source comprises (a) preparing a substrate, (b) setting the substrate in a vacuum chamber, (c) introducing a gas or vapor-containing silicon in a vacuum chamber, and (d) forming a silicon film on the intermediate layer by generating a plasma within the vacuum chamber.