Patents by Inventor Mikiko Fukasawa

Mikiko Fukasawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220200548
    Abstract: A second member is joined in surface contact with a first surface of a first member including a semiconductor region made from an elemental semiconductor. The second member includes a radio-frequency amplifier circuit made from a compound semiconductor. A conductive protrusion projects from the second member toward a side opposite to the first member. The first member includes a temperature measurement element that detects a temperature.
    Type: Application
    Filed: December 9, 2021
    Publication date: June 23, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Mikiko FUKASAWA, Satoshi GOTO, Shunji YOSHIMI, Yuji TAKEMATSU, Mitsunori SAMATA
  • Publication number: 20220199548
    Abstract: A semiconductor device includes first and second members. In the first member, a first electronic circuit including a semiconductor element is formed. The second member is joined to an area of part of a first surface of the first member, and includes a second electronic circuit including a semiconductor element formed of a semiconductor material different from that of the semiconductor element of the first electronic circuit. An interlayer insulating film covers the second member and an area of the first surface of the first member to which the second member is not joined. An inter-member connection wire on the interlayer insulating film couples the first and second electronic circuits through an opening in the interlayer insulating film. A shield structure including a first metal pattern disposed on the interlayer insulating film shields a shielded circuit, which is part of the first electronic circuit, in terms of radio frequencies.
    Type: Application
    Filed: December 13, 2021
    Publication date: June 23, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Satoshi GOTO, Masayuki Aoike, Mikiko Fukasawa
  • Publication number: 20220199557
    Abstract: In a semiconductor device, a first member having a first surface includes a plurality of circuit blocks disposed in an inner region of the first surface when the first surface is viewed in plan. The second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes a plurality of first transistors that are connected in parallel to each other and form a first amplifier circuit. A conductive protrusion protrudes from the second member on an opposite side to the first member. The first transistors are disposed in a region not overlapping any of the circuit blocks in the first member in a plan view.
    Type: Application
    Filed: December 13, 2021
    Publication date: June 23, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Shunji YOSHIMI, Satoshi GOTO, Mikiko FUKASAWA
  • Publication number: 20220199558
    Abstract: In a semiconductor device, when a first surface of a first member is viewed in plan, at least one switch circuit including a switch is disposed within the first surface. A second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes a plurality of transistors that are made of a compound semiconductor and form a radio-frequency amplifier circuit. A first conductive protrusion protrudes from the second member on an opposite side to the first member. The first member includes a circuit element disposed between the radio-frequency amplifier circuit and the at least one switch circuit in a plan view, the circuit element not forming the switch circuit.
    Type: Application
    Filed: December 13, 2021
    Publication date: June 23, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Satoshi GOTO, Shunji YOSHIMI, Mikiko FUKASAWA
  • Publication number: 20220199484
    Abstract: In a semiconductor device, when a first surface of a first member is viewed in plan, a plurality of circuit blocks are disposed in an inner region of the first surface. The second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes one or more circuit blocks. A conductive protrusion protrudes from the second member on an opposite side to the first member. One of the circuit blocks in the second member constitutes a first amplifier circuit including a plurality of first transistors that are connected in parallel to each other. At least one of the circuit blocks in the first member overlaps at least one circuit block in the second member in a plan view.
    Type: Application
    Filed: December 17, 2021
    Publication date: June 23, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Mikiko FUKASAWA, Satoshi GOTO, Shunji YOSHIMI
  • Patent number: 10964996
    Abstract: Bidirectional detection is performed with a suppressed increase in return loss at an output terminal. A bidirectional coupler includes a detection port, a main line connected to a first port and a second port, a sub-line, a termination circuit, a switch circuit that switches each of one end and another end of the sub-line to the termination circuit or the detection port, and a matching network disposed between the switch circuit and the detection port and including at least one of a first variable capacitor, a first variable inductor, or a first variable resistor. In a first mode for detecting a first signal, the switch circuit connects the one end of the sub-line to the detection port, and connects the other end of the sub-line to the termination circuit.
    Type: Grant
    Filed: September 23, 2019
    Date of Patent: March 30, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Ryangsu Kim, Katsuya Shimizu, Yasushi Shigeno, Daisuke Tokuda, Mikiko Fukasawa
  • Publication number: 20200252029
    Abstract: A current control circuit controls a base current of a first transistor included in a bias circuit outputting a bias current to a power amplifier based on a base-collector voltage of the first transistor. The current control circuit includes a first circuit that outputs a signal associated with the base-collector voltage of the first transistor, and a second circuit that, based on the signal, provides electrical continuity between a base of the first transistor and a reference potential.
    Type: Application
    Filed: February 4, 2020
    Publication date: August 6, 2020
    Inventors: Mikiko FUKASAWA, Kazuhiko ISHIMOTO
  • Publication number: 20200021003
    Abstract: Bidirectional detection is performed with a suppressed increase in return loss at an output terminal. A bidirectional coupler includes a detection port, a main line connected to a first port and a second port, a sub-line, a termination circuit, a switch circuit that switches each of one end and another end of the sub-line to the termination circuit or the detection port, and a matching network disposed between the switch circuit and the detection port and including at least one of a first variable capacitor, a first variable inductor, or a first variable resistor. In a first mode for detecting a first signal, the switch circuit connects the one end of the sub-line to the detection port, and connects the other end of the sub-line to the termination circuit.
    Type: Application
    Filed: September 23, 2019
    Publication date: January 16, 2020
    Inventors: Ryangsu KIM, Katsuya SHIMIZU, Yasushi SHIGENO, Daisuke TOKUDA, Mikiko FUKASAWA
  • Patent number: 10297892
    Abstract: When a plurality of RF signals having different frequer bands are output at the same time by carrier aggregation, a switch element allows parallel connection between two capacitance elements such that a low pass filter has a first cut-off frequency that is lower than the frequency of an intermodulation distortion signal generated by the carrier aggregation. When an RF signal of a frequency band is output, the switch element releases parallel connection between the two capacitance elements such that the low pass filter has a second cut-off frequency that is higher than the first cut-off frequency.
    Type: Grant
    Filed: July 10, 2018
    Date of Patent: May 21, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Mikiko Fukasawa
  • Publication number: 20180316076
    Abstract: When a plurality of RF signals having different frequer bands are output at the same time by carrier aggregation, a switch element allows parallel connection between two capacitance elements such that a low pass filter has a first cut-off frequency that is lower than the frequency of an intermodulation distortion signal generated by the carrier aggregation. When an RF signal of a frequency band is output, the switch element releases parallel connection between the two capacitance elements such that the low pass filter has a second cut-off frequency that is higher than the first cut-off frequency.
    Type: Application
    Filed: July 10, 2018
    Publication date: November 1, 2018
    Inventor: Mikiko Fukasawa
  • Patent number: 10044084
    Abstract: When a plurality of RF signals having different freque bands are output at the same time by carrier aggregation, a switch element allows parallel connection between two capacitance elements such that a low pass filter has a first cut-off frequency that is lower than the frequency of an intermodulation distortion signal generated by the carrier aggregation. When an RF signal of a frequency band is output, the switch element releases parallel connection between the two capacitance elements such that the low pass filter has a second cut-off frequency that is higher than the first cut-off frequency.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: August 7, 2018
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Mikiko Fukasawa
  • Publication number: 20180198181
    Abstract: When a plurality of RF signals having different frequency bands are output at the same time by carrier aggregation, a switch element allows parallel connection between two capacitance elements such that a low pass filter has a first cut-off frequency that is lower than the frequency of an intermodulation distortion signal generated by the carrier aggregation. When an RF signal of a frequency band is output, the switch element releases parallel connection between the two capacitance elements such that the low pass filter has a second cut-off frequency that is higher than the first cut-off frequency.
    Type: Application
    Filed: January 10, 2018
    Publication date: July 12, 2018
    Inventor: Mikiko Fukasawa