Abstract: A semiconductor device includes first and second members. In the first member, a first electronic circuit including a semiconductor element is formed. The second member is joined to an area of part of a first surface of the first member, and includes a second electronic circuit including a semiconductor element formed of a semiconductor material different from that of the semiconductor element of the first electronic circuit. An interlayer insulating film covers the second member and an area of the first surface of the first member to which the second member is not joined. An inter-member connection wire on the interlayer insulating film couples the first and second electronic circuits through an opening in the interlayer insulating film. A shield structure including a first metal pattern disposed on the interlayer insulating film shields a shielded circuit, which is part of the first electronic circuit, in terms of radio frequencies.

Abstract: An integrated circuit includes a first base that has at least a part formed of a first semiconductor material and that, in plan view, has a central area and a peripheral area surrounding the central area, and a second base that has at least a part formed of a second semiconductor material different from the first semiconductor material and that includes a power amplifier circuit. In plan view, the second base is overlain by the central area, and does not overlap the peripheral area.

Abstract: A radio-frequency module includes a module substrate that has a principal surface, an integrated circuit on the principal surface that includes a power amplifier circuit, and an SMD on the principal surface that includes a circuit device directly connected to the power amplifier circuit. The integrated circuit includes a first base that has at least a part formed of a first semiconductor material, and a second base that has at least a part formed of a second semiconductor material and that includes the power amplifier circuit. The first base has two sides that are opposite each other in plan view. The SMD is closer to one side than the other side in plan view. In plan view, the second base is smaller than the first base and is overlain by the first base at a position closer to the one side than to the other side.

Abstract: A radio-frequency module includes a module substrate having main surfaces facing each other, a first base material at least partially formed of a first semiconductor material, and a second base material at least partially formed of a second semiconductor material having thermal conductivity higher than that of the first semiconductor material and in which a power amplifier circuit is formed. The first base material and the second base material are arranged on the main surface, the second base material is arranged between the module substrate and the first base material, bonded to the first base material, and connected to the main surface with an electrode interposed therebetween, one of the first base material and the second base material is connected to the main surface with an electrode interposed therebetween, and in plan view of the module substrate, an area of the electrode is larger than an area of the electrode.

Abstract: A current control circuit controls a base current of a first transistor included in a bias circuit outputting a bias current to a power amplifier based on a base-collector voltage of the first transistor. The current control circuit includes a first circuit that outputs a signal associated with the base-collector voltage of the first transistor, and a second circuit that, based on the signal, provides electrical continuity between a base of the first transistor and a reference potential.

Abstract: A semiconductor device includes first and second members. In the first member, a first electronic circuit including a semiconductor element is formed. The second member is joined to an area of part of a first surface of the first member, and includes a second electronic circuit including a semiconductor element formed of a semiconductor material different from that of the semiconductor element of the first electronic circuit. An interlayer insulating film covers the second member and an area of the first surface of the first member to which the second member is not joined. An inter-member connection wire on the interlayer insulating film couples the first and second electronic circuits through an opening in the interlayer insulating film. A shield structure including a first metal pattern disposed on the interlayer insulating film shields a shielded circuit, which is part of the first electronic circuit, in terms of radio frequencies.

Abstract: In a semiconductor device, when a first surface of a first member is viewed in plan, at least one switch circuit including a switch is disposed within the first surface. A second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes a plurality of transistors that are made of a compound semiconductor and form a radio-frequency amplifier circuit. A first conductive protrusion protrudes from the second member on an opposite side to the first member. The first member includes a circuit element disposed between the radio-frequency amplifier circuit and the at least one switch circuit in a plan view, the circuit element not forming the switch circuit.

Abstract: A second member is joined in surface contact with a first surface of a first member including a semiconductor region made from an elemental semiconductor. The second member includes a radio-frequency amplifier circuit made from a compound semiconductor. A conductive protrusion projects from the second member toward a side opposite to the first member. The first member includes a temperature measurement element that detects a temperature.

Abstract: In a semiconductor device, when a first surface of a first member is viewed in plan, a plurality of circuit blocks are disposed in an inner region of the first surface. The second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes one or more circuit blocks. A conductive protrusion protrudes from the second member on an opposite side to the first member. One of the circuit blocks in the second member constitutes a first amplifier circuit including a plurality of first transistors that are connected in parallel to each other. At least one of the circuit blocks in the first member overlaps at least one circuit block in the second member in a plan view.

Abstract: In a semiconductor device, a first member having a first surface includes a plurality of circuit blocks disposed in an inner region of the first surface when the first surface is viewed in plan. The second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes a plurality of first transistors that are connected in parallel to each other and form a first amplifier circuit. A conductive protrusion protrudes from the second member on an opposite side to the first member. The first transistors are disposed in a region not overlapping any of the circuit blocks in the first member in a plan view.

Abstract: Bidirectional detection is performed with a suppressed increase in return loss at an output terminal. A bidirectional coupler includes a detection port, a main line connected to a first port and a second port, a sub-line, a termination circuit, a switch circuit that switches each of one end and another end of the sub-line to the termination circuit or the detection port, and a matching network disposed between the switch circuit and the detection port and including at least one of a first variable capacitor, a first variable inductor, or a first variable resistor. In a first mode for detecting a first signal, the switch circuit connects the one end of the sub-line to the detection port, and connects the other end of the sub-line to the termination circuit.

Abstract: A current control circuit controls a base current of a first transistor included in a bias circuit outputting a bias current to a power amplifier based on a base-collector voltage of the first transistor. The current control circuit includes a first circuit that outputs a signal associated with the base-collector voltage of the first transistor, and a second circuit that, based on the signal, provides electrical continuity between a base of the first transistor and a reference potential.

Abstract: Bidirectional detection is performed with a suppressed increase in return loss at an output terminal. A bidirectional coupler includes a detection port, a main line connected to a first port and a second port, a sub-line, a termination circuit, a switch circuit that switches each of one end and another end of the sub-line to the termination circuit or the detection port, and a matching network disposed between the switch circuit and the detection port and including at least one of a first variable capacitor, a first variable inductor, or a first variable resistor. In a first mode for detecting a first signal, the switch circuit connects the one end of the sub-line to the detection port, and connects the other end of the sub-line to the termination circuit.

Abstract: When a plurality of RF signals having different frequer bands are output at the same time by carrier aggregation, a switch element allows parallel connection between two capacitance elements such that a low pass filter has a first cut-off frequency that is lower than the frequency of an intermodulation distortion signal generated by the carrier aggregation. When an RF signal of a frequency band is output, the switch element releases parallel connection between the two capacitance elements such that the low pass filter has a second cut-off frequency that is higher than the first cut-off frequency.

Abstract: When a plurality of RF signals having different frequer bands are output at the same time by carrier aggregation, a switch element allows parallel connection between two capacitance elements such that a low pass filter has a first cut-off frequency that is lower than the frequency of an intermodulation distortion signal generated by the carrier aggregation. When an RF signal of a frequency band is output, the switch element releases parallel connection between the two capacitance elements such that the low pass filter has a second cut-off frequency that is higher than the first cut-off frequency.

Abstract: When a plurality of RF signals having different freque bands are output at the same time by carrier aggregation, a switch element allows parallel connection between two capacitance elements such that a low pass filter has a first cut-off frequency that is lower than the frequency of an intermodulation distortion signal generated by the carrier aggregation. When an RF signal of a frequency band is output, the switch element releases parallel connection between the two capacitance elements such that the low pass filter has a second cut-off frequency that is higher than the first cut-off frequency.

Abstract: When a plurality of RF signals having different frequency bands are output at the same time by carrier aggregation, a switch element allows parallel connection between two capacitance elements such that a low pass filter has a first cut-off frequency that is lower than the frequency of an intermodulation distortion signal generated by the carrier aggregation. When an RF signal of a frequency band is output, the switch element releases parallel connection between the two capacitance elements such that the low pass filter has a second cut-off frequency that is higher than the first cut-off frequency.