Patents by Inventor Mikiko Kobayashi
Mikiko Kobayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10490581Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.Type: GrantFiled: August 28, 2018Date of Patent: November 26, 2019Assignee: Sony CorporationInventors: Mikiko Kobayashi, Kazuyoshi Yamashita
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Publication number: 20180366503Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.Type: ApplicationFiled: August 28, 2018Publication date: December 20, 2018Applicant: Sony CorporationInventors: Mikiko Kobayashi, Kazuyoshi Yamashita
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Patent number: 10084002Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.Type: GrantFiled: February 6, 2018Date of Patent: September 25, 2018Assignee: Sony CorporationInventors: Mikiko Kobayashi, Kazuyoshi Yamashita
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Publication number: 20180166480Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.Type: ApplicationFiled: February 6, 2018Publication date: June 14, 2018Inventors: Mikiko Kobayashi, Kazuyoshi Yamashita
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Patent number: 9929193Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.Type: GrantFiled: November 10, 2016Date of Patent: March 27, 2018Assignee: Sony CorporationInventors: Mikiko Kobayashi, Kazuyoshi Yamashita
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Publication number: 20170062502Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.Type: ApplicationFiled: November 10, 2016Publication date: March 2, 2017Inventors: Mikiko Kobayashi, Kazuyoshi Yamashita
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Patent number: 9530815Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.Type: GrantFiled: June 27, 2016Date of Patent: December 27, 2016Assignee: Sony CorporationInventors: Mikiko Kobayashi, Kazuyoshi Yamashita
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Publication number: 20160307955Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.Type: ApplicationFiled: June 27, 2016Publication date: October 20, 2016Inventors: Mikiko Kobayashi, Kazuyoshi Yamashita
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Patent number: 9419042Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.Type: GrantFiled: February 22, 2016Date of Patent: August 16, 2016Assignee: SONY CORPORATIONInventors: Mikiko Kobayashi, Kazuyoshi Yamashita
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Publication number: 20160172409Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.Type: ApplicationFiled: February 22, 2016Publication date: June 16, 2016Inventors: Mikiko Kobayashi, Kazuyoshi Yamashita
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Patent number: 9356057Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.Type: GrantFiled: August 19, 2015Date of Patent: May 31, 2016Assignee: Sony CorporationInventors: Mikiko Kobayashi, Kazuyoshi Yamashita
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Patent number: 9299867Abstract: A solid-state imaging apparatus includes a transfer gate electrode formed on a semiconductor substrate; a photoelectric conversion unit including an electric charge storage area that is formed from a surface side of the semiconductor substrate in a depth direction, a transfer auxiliary area formed of a second conductive type impurity area that is formed in such a manner as to partially overlap the transfer gate electrode, and a dark current suppression area that is a first dark current suppression area formed in an upper layer of the transfer auxiliary and formed so as to have positional alignment in such a manner that the end portion of the transfer auxiliary area on the transfer gate electrode side is at the same position as the end portion of the transfer auxiliary area; and a signal processing circuit configured to process an output signal output from the solid-state imaging apparatus.Type: GrantFiled: February 24, 2014Date of Patent: March 29, 2016Assignee: Sony CorporationInventors: Mikiko Kobayashi, Sanghoon Ha
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Publication number: 20150357362Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.Type: ApplicationFiled: August 19, 2015Publication date: December 10, 2015Inventors: Mikiko Kobayashi, Kazuyoshi Yamashita
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Patent number: 9184208Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.Type: GrantFiled: March 28, 2013Date of Patent: November 10, 2015Assignee: SONY CORPORATIONInventors: Mikiko Kobayashi, Kazuyoshi Yamashita
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Publication number: 20140167124Abstract: A solid-state imaging apparatus includes a transfer gate electrode formed on a semiconductor substrate; a photoelectric conversion unit including an electric charge storage area that is formed from a surface side of the semiconductor substrate in a depth direction, a transfer auxiliary area formed of a second conductive type impurity area that is formed in such a manner as to partially overlap the transfer gate electrode, and a dark current suppression area that is a first dark current suppression area formed in an upper layer of the transfer auxiliary and formed so as to have positional alignment in such a manner that the end portion of the transfer auxiliary area on the transfer gate electrode side is at the same position as the end portion of the transfer auxiliary area; and a signal processing circuit configured to process an output signal output from the solid-state imaging apparatus.Type: ApplicationFiled: February 24, 2014Publication date: June 19, 2014Applicant: Sony CorporationInventors: Mikiko Kobayashi, Sanghoon Ha
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Patent number: 8710559Abstract: A solid-state imaging apparatus includes a transfer gate electrode formed on a semiconductor substrate; a photoelectric conversion unit including an electric charge storage area that is formed from a surface side of the semiconductor substrate in a depth direction, a transfer auxiliary area formed of a second conductive type impurity area that is formed in such a manner as to partially overlap the transfer gate electrode, and a dark current suppression area that is a first dark current suppression area formed in an upper layer of the transfer auxiliary and formed so as to have positional alignment in such a manner that the end portion of the transfer auxiliary area on the transfer gate electrode side is at the same position as the end portion of the transfer auxiliary area; and a signal processing circuit configured to process an output signal output from the solid-state imaging apparatus.Type: GrantFiled: June 20, 2012Date of Patent: April 29, 2014Assignee: Sony CorporationInventors: Mikiko Kobayashi, Sanghoon Ha
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Publication number: 20130264468Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.Type: ApplicationFiled: March 28, 2013Publication date: October 10, 2013Applicant: Sony CorporationInventors: Mikiko Kobayashi, Kazuyoshi Yamashita
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Publication number: 20130002918Abstract: A solid-state imaging apparatus includes a transfer gate electrode formed on a semiconductor substrate; a photoelectric conversion unit including an electric charge storage area that is formed from a surface side of the semiconductor substrate in a depth direction, a transfer auxiliary area formed of a second conductive type impurity area that is formed in such a manner as to partially overlap the transfer gate electrode, and a dark current suppression area that is a first dark current suppression area formed in an upper layer of the transfer auxiliary and formed so as to have positional alignment in such a manner that the end portion of the transfer auxiliary area on the transfer gate electrode side is at the same position as the end portion of the transfer auxiliary area; and a signal processing circuit configured to process an output signal output from the solid-state imaging apparatus.Type: ApplicationFiled: June 20, 2012Publication date: January 3, 2013Applicant: SONY CORPORATIONInventors: Mikiko Kobayashi, Sanghoon Ha
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Patent number: 6560863Abstract: A method of producing a wiring board having a plurality of wiring layers each being located on an electrical insulation layer, in which an electrical insulation layer is formed on a substrate using a resin material, and a conductor layer is formed on the surface of the electrical insulation layer by successive electroless plating and electroplating with copper, and is patterned to form a wiring layer, wherein, after the formation of the electrical insulation layer on the substrate, the electrical insulation layer is subjected to a plasma treatment and a subsequent ultraviolet treatment, and the electroless plating and the electroplating are then performed.Type: GrantFiled: August 8, 2001Date of Patent: May 13, 2003Assignee: Shinko Electric Industries, Co., Ltd.Inventors: Toshinori Koyama, Mikiko Kobayashi, Atsuhiko Hattori