Abstract: To provide a field-effect transistor, containing: a substrate; a protective layer; a gate insulating layer formed between the substrate and the protective layer; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed at least between the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is formed at an opposite side to the side where the semiconductor layer is provided, with the gate insulating layer being between the gate electrode and the semiconductor layer, and is in contact with the gate insulating layer, wherein the protective layer contains a metal oxide composite, which contains at least Si and alkaline earth metal.

Abstract: A field-effect transistor, which contains: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, which are configured to extract electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor is a triclinic crystal compound, a monoclinic crystal compound, or a trigonal crystal compound, each of which is substitutionally doped with at least one dopant selected from the group consisting of a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, and a hexavalent cation, and wherein a valence of the dopant is greater than a valence of a metal ion constituting the n-type oxide semiconductor, excluding the dopant.

Abstract: A nozzle plate having a nozzle hole that penetrates through the nozzle plate in a thickness direction is disclosed. The nozzle plate includes a discharge outlet that is formed at the nozzle hole, and provided curvatures of four corner portions of an opening shape of the discharge outlet are denoted as R1, R2, R3, and R4, the opening shape of the discharge outlet is configured to approximate the equation R1=R2?R3=R4?0.

Abstract: To provide an electroconductive thin film, containing: a metal oxide containing indium and tin; and gold.

Abstract: A field-effect transistor, which contains: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, which are configured to extract electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor is a triclinic crystal compound, a monoclinic crystal compound, or a trigonal crystal compound, each of which is substitutionally doped with at least one dopant selected from the group consisting of a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, and a hexavalent cation, and wherein a valence of the dopant is greater than a valence of a metal ion constituting the n-type oxide semiconductor, excluding the dopant.

Abstract: To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type oxide is amorphous.

Abstract: A coating liquid for forming a metal oxide thin film includes: an inorganic indium compound; an inorganic calcium compound or an inorganic strontium compound, or both thereof; and an organic solvent.

Abstract: A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu2O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and x and y satisfy the following expressions: 0?x<100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.

Abstract: A two-photon absorption material represented by the following General Formula (I): where R1 to R8 each represent hydrogen, halogen, a carboxyl group, a carboxylic acid ester group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted alkyl group; one to three of X1 to X4 each represent a substituted or unsubstituted amino group, a substituted or unsubstituted aminophenyl group, a substituted or unsubstituted dialkylaminophenyl group, a substituted or unsubstituted N,N-diphenyl-aminophenyl group, a substituted or unsubstituted indolyl group, or a substituted or unsubstituted azulenyl group, and the other represents or the others each represent hydrogen, halogen, a carboxyl group, a carboxylic acid ester group, a substituted or unsubstituted aryl group, a substituted or unsubstituted pyridinyl group, a substituted or unsubstituted alkyl group or a perhalogenoalkyl group; and M represents two hydrogen atoms or a divalent, trivalent or tetravalent metal atom which may have oxygen or

Abstract: A photosensitized composite material and a material, an element, a device, and the like, which employ the photosensitized composite material, are provided. In the photosensitized composite material, multiphoton absorption compounds are highly sensitized for practical use by utilizing an enhanced plasmon field. The photosensitized composite material has a structure where the multiphoton absorption compounds are linked to the surface of a fine metal particle through linking groups. The fine metal particle generates an enhanced surface plasmon field in resonance with a multiphoton excitation wavelength. The multiphoton absorption compounds have a molecular structure enabling multiphoton absorption.

Abstract: An optical recording medium contains a recording layer being composed of a phase-change recording material where at least four elements, Ga, Sb, Sn and Ge are contained and the transfer linear velocity is 20 m/s to 30 m/s, and when the wavelength of a recording/reproducing light is within the range of 650 nm to 665 nm and the recording linear velocity is 20 m/s to 28 m/s, the refractive index Nc and the extinction coefficient Kc in a crystalline state and the refractive index Na and the extinction coefficient Ka in an amorphous state in the recording layer respectively satisfy the following numerical expressions: 2.0?Nc?3.0, 4.0?Kc?5.0, 4.0?Na?5.0, and 2.5?Ka?3.1, and information is recordable at the range of 20 m/s to 28 m/s of recording linear velocity.

Abstract: A recording method of an optical recording medium comprises irradiating the medium with a laser having m pulse sets each comprising a heating pulse and a cooling pulse, in which m is a natural number; and scanning the medium with the laser at a scanning speed v to record marks each of a length nT, in which n is a natural number of 3 or more and T is a clock cycle, wherein a length TCPn of a final cooling pulse is determined in accordance with the scanning speed v using the following functions, in v<v0, TCPn/T=f1,n(v) in v v0, TCPn/T=f2,n(v), where the f1,n(v) and f2,n(v) each represents a continuous function of the scanning speed v and satisfies the condition where an existence ratio of abnormal marks is 1.0×10?4 or less, and v0 is a selectable scanning speed.

Abstract: A two-photon absorption material represented by the following General Formula (I): where R1 to R8 each represent hydrogen, halogen, a carboxyl group, a carboxylic acid ester group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted alkyl group; one to three of X1 to X4 each represent a substituted or unsubstituted amino group, a substituted or unsubstituted aminophenyl group, a substituted or unsubstituted dialkylaminophenyl group, a substituted or unsubstituted N,N-diphenyl-aminophenyl group, a substituted or unsubstituted indolyl group, or a substituted or unsubstituted azulenyl group, and the other represents or the others each represent hydrogen, halogen, a carboxyl group, a carboxylic acid ester group, a substituted or unsubstituted aryl group, a substituted or unsubstituted pyridinyl group, a substituted or unsubstituted alkyl group or a perhalogenoalkyl group; and M represents two hydrogen atoms or a divalent, trivalent or tetravalent metal atom which may have oxygen or

Abstract: A multiphoton absorption functional material including one of: fine particles of metal, and fine particles partly coated with the metal, the metal generating enhanced surface plasmon field on a metal surface, wherein the fine particles or the fine particles partly coated with the metal are dispersed in a multiphoton absorption material, and wherein the multiphoton absorption functional material is a bulk body.

Abstract: A photosensitized composite material and a material, an element, a device, and the like, which employ the photosensitized composite material, are provided. In the photosensitized composite material, multiphoton absorption compounds are highly sensitized for practical use by utilizing an enhanced plasmon field. The photosensitized composite material has a structure where the multiphoton absorption compounds are linked to the surface of a fine metal particle through linking groups. The fine metal particle generates an enhanced surface plasmon field in resonance with a multiphoton excitation wavelength. The multiphoton absorption compounds have a molecular structure enabling multiphoton absorption.

Abstract: An optical recording method to record information with a mark length recording method, where an amorphous mark and a crystal space are recorded only in the groove of a substrate having a guide groove, with the temporal length of the mark and the space of nT (T denotes a reference clock period; n denotes a natural number). The space is formed at least by an erase pulse of power Pe; all the marks of 4T or longer are formed by a multi pulse alternatively irradiating a heating pulse of power Pw and a cooling pulse of power Pb while Pw>Pb; and the Pe and the Pw satisfy the following relations: 0.15?Pe/Pw?0.4, and 0.4??w/(?w+?b)?0.8, where ?w denotes the sum of the length of the heating pulses, and ?b denotes the sum of the length of the cooling pulses.

Abstract: A method of recording on an optical recording medium which comprises a multi-photon absorption material and fine particles which have an sensitizing effect of enhancing a multi-photon absorption process of the multi-photon absorption material by a plasmon-enhanced field having anisotropy, the method including: deactivating the sensitizing effect of a part of the fine particles by deforming the part of the fine particles.

Abstract: A recording method of an optical recording medium comprises irradiating the medium with a laser having m pulse sets each comprising a heating pulse and a cooling pulse, in which m is a natural number; and scanning the medium with the laser at a scanning speed v to record marks each of a length nT, in which n is a natural number of 3 or more and T is a clock cycle, wherein a length TCPn of a final cooling pulse is determined in accordance with the scanning speed v using the following functions, in v<v0, TCPn/T=f1,n(v) in v v0, TCPn/T=f2,n(v), where the f1,n(v) and f2,n(v) each represents a continuous function of the scanning speed v and satisfies the condition where an existence ratio of abnormal marks is 1.0×10?4 or less, and v0 is a selectable scanning speed.

Abstract: An optical recording medium including: a substrate having translucency; a first protective layer thereon; a recording layer composed of a phase-change material; a second protective layer; and a reflective layer, wherein laser beam irradiation causes phase-change of the recording layer between a crystalline phase and an amorphous phase thereby at least one of to rewrite and to record information, wherein the phase-change material comprises Ga, Sb and Sn, Ga content, Sb content, and Sn content satisfy the following formula, and the total content of Ga, Sb and Sn is at least 80 atomic % of the entire phase-change material: Ga?Sb?Sn?(where, ?+?+?=100 atomic %), where 20??2.75?+0.708?+1.18??7.56?43, and ?/(?+?)?0.12.

Abstract: To provide a dye material containing fine particles and a multiphoton absorbent material, wherein the fine particles are fine metal particles that generate enhanced surface plasmon field or fine particles partially coated with a metal that generates enhanced surface plasmon field. Also provided is a multiphoton absorbent material which can obtain the irradiation effect more intense than the irradiation light using the dye material.