Abstract: A semiconductor memory device according to the embodiments includes a first laminated body, a second laminated body, an intermediate insulation layer, and a columnar body. The intermediate insulation layer is positioned between the first laminated body and the second laminated body. A plurality of conductive layers of the second laminated body include a first conductive layer which is positioned closest to the intermediate insulation layer among the plurality of conductive layers of the second laminated body. The first conductive layer has a main body part having a first end surface facing the columnar body, and a protrusion part which protrudes from the main body part to the first laminated body, and has a second end surface facing the columnar body. The first end surface and the second end surface are continuous with each other.

Abstract: A semiconductor memory device according to the embodiments includes a first laminated body, a second laminated body, an intermediate insulation layer, and a columnar body. The intermediate insulation layer is positioned between the first laminated body and the second laminated body. A plurality of conductive layers of the second laminated body include a first conductive layer which is positioned closest to the intermediate insulation layer among the plurality of conductive layers of the second laminated body. The first conductive layer has a main body part having a first end surface facing the columnar body, and a protrusion part which protrudes from the main body part to the first laminated body, and has a second end surface facing the columnar body. The first end surface and the second end surface are continuous with each other.

Abstract: A semiconductor memory device includes a substrate with a first insulating film thereon, a wiring in the first insulating film, a first electrode film on the first insulating film, a stacked body on the first electrode film, made of alternating second insulating films and second electrode films, a first insulating member extending in a direction to penetrate the stacked body, a first semiconductor film around the first insulating member and connected to the first electrode film, a third insulating film around the first semiconductor film, a first conductive member extending in the direction to penetrate the stacked body and the first electrode film, and connected to the wiring, and a fourth insulating film around the first conductive member. The fourth insulating film has the same film structure as the third insulating film.

Abstract: A semiconductor memory device includes a substrate with a first insulating film thereon, a wiring in the first insulating film, a first electrode film on the first insulating film, a stacked body on the first electrode film, made of alternating second insulating films and second electrode films, a first insulating member extending in a direction to penetrate the stacked body, a first semiconductor film around the first insulating member and connected to the first electrode film, a third insulating film around the first semiconductor film, a first conductive member extending in the direction to penetrate the stacked body and the first electrode film, and connected to the wiring, and a fourth insulating film around the first conductive member. The fourth insulating film has the same film structure as the third insulating film.