Patents by Inventor Mikio Ashikawa

Mikio Ashikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4039888
    Abstract: A face-plate of an image pick-up tube having a plurality of electrodes formed thereon and a plurality of conductors provided for external connection extending from said plurality of electrodes across the outer periphery of the face plate to the outer surface thereof. At least one of the plurality of conductors for said external connection comprises a thin film which is electrically insolated from the other conductors by a thin insulating film formed thereon. This thin insulating film also serves to seal, in an air tight manner, a vacuum envelope together with the conductor or conductors for external connection extending to the outer surface of the face-plate.
    Type: Grant
    Filed: January 31, 1973
    Date of Patent: August 2, 1977
    Assignee: Hitachi, Ltd.
    Inventors: Mikio Ashikawa, Iwao Takemoto
  • Patent number: 4016007
    Abstract: A polycrystalline silicon layer is deposited by chemical vapor deposition method at a predetermined location on an oxide film grown by thermal oxidation on a surface of a monocrystal silicon substrate. Nitrogen ions are implanted in the outer surface of the polycrystalline silicon layer and the exposed surface of the oxide film. The whole surfaces are oxidized by wet oxidation so as to form a thick oxide layer at the surface of the oxide film which is not covered by the polycrystalline silicon layer.
    Type: Grant
    Filed: February 13, 1976
    Date of Patent: April 5, 1977
    Assignee: Hitachi, Ltd.
    Inventors: Yasuo Wada, Hiroo Usui, Mitsumasa Koyanagi, Mikio Ashikawa
  • Patent number: 4011402
    Abstract: In a scanning circuit having a plurality of cascade-connected unit circuits driven only by direct current, each unit circuit consisting of at least a pair of polarity inverting circuits, a train of output pulses shifted by a constant delay one after another depending upon the delay time proper to the unit circuits, are derived from the unit circuits by applying an input pulse to the first stage of the scanning circuit.
    Type: Grant
    Filed: August 19, 1974
    Date of Patent: March 8, 1977
    Assignee: Hitachi, Ltd.
    Inventors: Norio Koike, Takamitsu Kamiyama, Mikio Ashikawa
  • Patent number: 3957609
    Abstract: A thin film mask having a predetermined pattern is formed directly on a thin, transparent, conductive SnO.sub.2 film formed on a dielectric substrate in order to form a fine pattern of the transparent, conductive film and that part of the transparent conductive film which is not covered by the mask is etched away through the bombardment with ions of gas accelerated under the influence of an RF electric field. Suitable masks include photoresists, aluminum, chromium, and manganese.
    Type: Grant
    Filed: September 12, 1974
    Date of Patent: May 18, 1976
    Assignee: Hitachi, Ltd.
    Inventors: Akira Sasano, Kikuo Douta, Mikio Ashikawa
  • Patent number: 3946151
    Abstract: In an image sensor having a large scale array of semiconductor photodetectors, only the noise component is delivered from a first photodetector subsequent to the readout of a stored signal, in synchronism with the readout of a signal of a second photodetector, so that the noise component may be utilized for the cancellation of the noise component in the output from the second photodetector.
    Type: Grant
    Filed: February 14, 1974
    Date of Patent: March 23, 1976
    Assignee: Hitachi, Ltd.
    Inventors: Takamitsu Kamiyama, Mikio Ashikawa
  • Patent number: 3942982
    Abstract: In selectively etching a solid oxide thin film which has chemisorbed water (surface hydroxyl groups) in its surface, the thin film is surface-treated with an organic compound which has within its molecule a functional group to react with the surface hydroxyl groups. Thereafter, photo-etching is performed by the conventional method by applying a thin film of a photosensitive organic polymer onto the treated thin film. Through selection of the sort of the organic compound, the degree of side-etch arising in the process of the selective etch can be controlled.
    Type: Grant
    Filed: May 6, 1974
    Date of Patent: March 9, 1976
    Assignee: Hitachi, Ltd.
    Inventors: Hiroshi Yanazawa, Norikazu Hashimoto, Mikio Ashikawa, Kikuo Douta