Abstract: A light-emitting device includes a transparent substrate, a thin line structure formed on a portion of the transparent substrate and including thin lines which are formed in a stripe or lattice pattern, a transparent conductive layer formed on the portion of the transparent substrate where the thin line structure is formed, a light-emitting functional layer formed on a portion of the transparent conductive layer located in a light-emitting region, an electrode positioned on the light-emitting functional layer on an opposite side of the transparent conductive layer in the light-emitting region, and a sealing substrate positioned over the electrode and attached to the transparent substrate via an adhesive. The adhesive is applied to the transparent substrate such that the transparent conductive layer is not interposed between the adhesive and the transparent substrate, and that the adhesive is formed around the light-emitting region in plan view.

Abstract: A dye-sensitized solar cell includes a first electrode, a second electrode, an electron-collector/dye layer, and an electron donor. The second electrode faces the first electrode. The electron-collector/dye layer provided on the first electrode includes an electron collector and dye. The electron collector includes first electron collector grains and second electron collector grains. The first electron collector grains have a diameter or diameters within a first diameter range and the second electron collector grains have a diameter or diameters within a second diameter range. A minimum value of the second diameter range is greater than a maximum value of the first diameter range. The electron donor is provided between the electron-collector/dye layer and the second electrode.

Abstract: A semiconductor device having one or more semiconductor chips and chip components and a manufacturing method. In the semiconductor device, electrical short of the chip components and the like can be effectively avoided, and break away of the chip components from a substrate can be avoided. The semiconductor device comprises: one or more semiconductor chips each of which is flip chip bonded at a first surface thereof to the substrate; at least one chip components mounted on the substrate and in the proximity of the semiconductor chips; insulating underfill resin which covers the chip components and which fills at least part of a portion between the first surface of each of the semiconductor chips and the substrate; and a lid member which is bonded to a second surface of each of the semiconductor devices opposite to the first surface, via conductive adhesive resin.

Abstract: The semiconductor package according to the present invention includes an insulating substrate, a reinforcing plate formed in an annular form in the periphery on the surface of the insulating substrate, a semiconductor chip installed face down on the insulating substrate, a reinforcing plate, and a heat radiating plate formed over the semiconductor chip, wherein the height of the back face of the semiconductor chip as measured from the surface of the insulating substrate is larger than the height of the surface of the reinforcing plate, which is brought into contact with the radiating plate, as measured from the surface of the insulating substrate.

Abstract: A method of assembling a semiconductor device dissipates the stress of hardening an underfill resin injected between the wiring board and a semiconductor chip mounted on the wiring board. The underfill resin and a sealing member bonding resin are simultaneously hardened. Alternatively, a sealing space sealed by the sealing member is filled with the underfill resin.

Abstract: Insulating resin layers are formed respectively so as to cover electrical pads for the purpose of connecting metal bumps of a semiconductor device and a mounting board, metal bump electrode pads being formed on the surface of these insulating resin layers, so that the electrode pads are electrically connected to one another. Thermal stress between the semiconductor device and the mounting board is absorbed by the insulating resin layers, the influence felt on the metal bumps being alleviated, thereby achieving an improvement in the reliability of the connection made by the metal bumps.

Abstract: Disclosed is a multi-chip module. According to the present invention, the multi-chip module comprises: a first insulating board having a first surface and a second surface that is positioned opposite to the first surface; at least one semiconductor chip mounted on the first surface of the first insulating board; a plurality of metal connection members arranged on the second surface of the first insulating board; a second insulating board that is connected to the plurality of metal connection members; a metal plate that is securely attached to one part of the second surface of the first insulating board through an opening in the second insulating board; and electric components mounted on a surface of the second insulating board.

Abstract: A multi-chip module includes an insulating board, a semiconductor chip, a plurality of carriers, and semiconductor devices. The insulating board has a recess portion formed in a central portion of a lower surface. A wiring pattern is formed on the insulating board. The semiconductor chip is mounted in the recess portion in the insulating board. Each carrier is mounted on the upper surface of the insulating board and has a leg portion with a side-surface electrode formed on a side surface. The resin-sealed semiconductor devices are respectively mounted on the carriers. The resin-sealed semiconductor devices are mounted in a stacked state.