Abstract: An optical material includes lithium tantalate, and a molar composition ratio of lithium oxide and tantalum oxide (Li2O/Ta2O5) in the lithium tantalate is in the range of 0.975 to 0.982. Since an optical material having a high refractive index is provided in an optical unit, at the same focal distance, a lens thickness can be significantly reduced. As a result, an optical electronic component and an optical electronic device including the optical material has a reduced size and thickness and is highly functional.

Abstract: An optical material includes lithium tantalate, and a molar composition ratio of lithium oxide and tantalum oxide (Li2O/Ta2O5) in the lithium tantalate is in the range of 0.975 to 0.982. Since an optical material having a high refractive index is provided in an optical unit, at the same focal distance, a lens thickness can be significantly reduced. As a result, an optical electronic component and an optical electronic device including the optical material has a reduced size and thickness and is highly functional.

Abstract: A terbium type paramagnetic garnet single crystal having a high Faraday effect and a high light transmission factor even in a visible range, as well as a high Verdet constant. A magneto-optical device containing the terbium type paramagnetic garnet single crystal. The terbium type paramagnetic garnet single crystal contains at least terbium, at least one element of aluminum and gallium, and a part of the terbium is replaced by at least one element of cerium and praseodymium.

Abstract: A photo magnetic field sensor includes a Faraday rotator made of a paramagnetic material, a polarizer, an analyzer, a light-irradiating element, and a light-sensing element. The Faraday rotator is made of a paramagnetic garnet single crystal including at least Tb and Al.

Abstract: The terbium type paramagnetic garnet single crystal with such characteristics as a high Faraday effect and a high light transmission factor even in a visible range has a high Verdet constant. The magneto-optical device contains the terbium type paramagnetic garnet single crystal. The terbium type paramagnetic garnet single crystal contains at least terbium, at least one element of aluminum and gallium, a part of the terbium being replaced by at least one element of cerium and praseodymium.

Abstract: A feed rod for growing a magnetic single crystal having a composition represented by the formula (Y3-aAa)(Fe5-b-cBb)O12-&agr;, wherein A is at least one element selected from the lanthanoide series, B is at least one element selected from the group consisting of Ga, Al, In, and Sc, c is a value for decreasing the Fe content from the stoichiometric amount, &agr; is a value for decreasing the oxygen content to satisfy the chemically neutral condition, and the relationships 0≦a≧0.5; 0≦b≧1.0; 0<c≧0.15 and 0<&agr; are satisfied.

Abstract: A photo magnetic field sensor includes a Faraday rotator made of a paramagnetic material, a polarizer, an analyzer, a light-irradiating element, and a light-sensing element. The Faraday rotator is made of a paramagnetic garnet single crystal including at least Tb and Al.

Abstract: A method for manufacturing a terbium aluminum-based paramagnetic garnet single crystal which can easily produce a TAG single crystal having a large Faraday effect and a high light-transmittance even in the visual light range is provided, and the crystal, therefore is, usable as a material for a magneto-optical device. The method is for manufacturing a terbium aluminum-based paramagnetic garnet single crystal grown by a laser FZ method using a raw material rod made of paramagnetic garnet containing at least Tb and Al and a seed crystal, while at least one of the raw material rod and the seed crystal is porous, and the method can include the steps of preparing the raw material rod, preparing the seed crystal, melt-joining the raw material rod and the seed crystal, heat-melting the joint of the seed crystal and the raw material rod by application of optical energy thereto so as to prepare a melt zone, and cooling the resulting melt zone.

Abstract: A feed rod for growing a magnetic single crystal having a composition represented by the formula (Y3-aAa)(Fe5-b-cBb)O12-&agr;, wherein A is at least one element selected from the lanthanoide series, B is at least one element selected from the group consisting of Ga, Al, In, and Sc, c is a value for decreasing the Fe content from the stoichiometric amount, &agr; is a value for decreasing the oxygen content to satisfy the chemically neutral condition, and the relationships 0≦a≧0.5; 0≦b≧1.0; 0<c≧0.15 and 0<&agr; are satisfied.

Abstract: A method of manufacturing a single crystal, for example, an oxide single crystal, without using any seed crystal, includes the steps of preparing a raw material polycrystalline rod, and then using either the Floating Zone Method or the Laser Heated Pedestal Growth Method heating and melting the raw material polycrystalline rod to form a molten zone and then cooling and solidifying the molten zone successively in the length direction, wherein a fiber-shaped single crystal, which is 3 mm or smaller in diameter, grows in the direction normal to the densest surface.

Abstract: A single crystal producing method for growing a single crystal, comprises the steps of: placing a material at one focal point in a light-condensing and heating furnace having an ellipse in section; placing a heat light source at another focal point; and emitting a laser beam has a wavelength of not less than about 160 nm and not greater than about 1,000 nm, on or near the one focal point to form a melt zone; and moving the melt zone to grow a single crystal.

Abstract: There is provided a magnetostatic wave device which operates even with a substitution R, A:YIG having a small film thickness and which has a wider operational frequency band. A magnetostatic wave device comprising a magnetic garnet film is provided which is made of a material expressed by a general formula: (Y.sub.1-r R.sub.r).sub.3 (Fe.sub.1-a A.sub.a).sub.5 O.sub.12 where R is at least one selected from among La, Bi, Gd and Lu; A is at least one selected from among Al, Ga, In and Sc; r and a are within the ranges 0.ltoreq.r.ltoreq.1 and 0.ltoreq.a<1, respectively; and r and a can not be zero at the same time. Further, the crystal structure of said magnetic garnet film is a superlattice.