Patents by Inventor Mikio Higuchi

Mikio Higuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9625586
    Abstract: [Problem] To provide a scintillator plate capable of improving the accuracy of radiation detection, and expanding the surface area for practical use while suppressing manufacturing costs, and also provide a radiation measuring apparatus, a radiation imaging apparatus, and a scintillator plate manufacturing method. [Solution] A scintillator plate (1) includes a scintillator (2) that generates scintillation light when excited by incident radiation. The scintillator plate (1) includes a scintillator layer (22) covered with scintillator powder (21) having an average particle diameter equal to or greater than the range of the radiation within the scintillator (2) when the radiation to be measured is either alpha rays, electron beams, or ion beams.
    Type: Grant
    Filed: March 30, 2012
    Date of Patent: April 18, 2017
    Assignee: JAPAN ATOMIC ENERGY AGENCY
    Inventors: Junichi Kaneko, Mikio Higuchi, Takehiro Shimaoka, Youichi Tsubota, Kenji Izaki
  • Publication number: 20140014846
    Abstract: [Problem] To provide a scintillator plate capable of improving the accuracy of radiation detection, and expanding the surface area for practical use while suppressing manufacturing costs, and also provide a radiation measuring apparatus, a radiation imaging apparatus, and a scintillator plate manufacturing method. [Solution] A scintillator plate (1) includes a scintillator (2) that generates scintillation light when excited by incident radiation. The scintillator plate (1) includes a scintillator layer (22) covered with scintillator powder (21) having an average particle diameter equal to or greater than the range of the radiation within the scintillator (2) when the radiation to be measured is either alpha rays, electron beams, or ion beams.
    Type: Application
    Filed: March 30, 2012
    Publication date: January 16, 2014
    Applicant: JAPAN ATOMIC ENERGY AGENCY
    Inventors: Junichi Kaneko, Mikio Higuchi, Takehiro Shimaoka, Youichi Tsubota, Kenji Izaki
  • Patent number: 6937630
    Abstract: To provide a laser oscillation method and a laser device, which use a laser medium such as an Nd:GdVO4 crystal to which neodymium is doped in high concentration exceeding 1% in atomicity ratio, the laser medium comprised of the gadolinium-vanadate crystal to which neodymium as laser active ion is doped by a floating zone method such that concentration becomes exceeding 1% in atomicity ratio.
    Type: Grant
    Filed: September 10, 2002
    Date of Patent: August 30, 2005
    Assignees: Riken, NEC Tokin Corporation, Megaopto Co., Ltd.
    Inventors: Satoshi Wada, Takayo Ogawa, Hideo Tashiro, Hiroshi Machida, Mikio Higuchi, Kohei Kodaira, Tomohiro Shonai
  • Publication number: 20030147444
    Abstract: To provide a laser oscillation method and a laser device, which use a laser medium such as an Nd:GdVO4 crystal to which neodymium is doped in high concentration exceeding 1% in atomicity ratio, the laser medium comprised of the gadolinium-vanadate crystal to which neodymium as laser active ion is doped by a floating zone method such that concentration becomes exceeding 1% in atomicity ratio.
    Type: Application
    Filed: September 10, 2002
    Publication date: August 7, 2003
    Inventors: Satoshi Wada, Takayo Ogawa, Hideo Tashiro, Hiroshi Machida, Mikio Higuchi, Kohei Kodaira, Tomohiro Shonai