Patents by Inventor Mikio Ichihashi
Mikio Ichihashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6750451Abstract: Disclosed is an observation apparatus and method using an electron beam, capable of measuring stress and strain information on a crystal structure in a specimen using electron beam diffraction images. A method according to the invention includes mounting a specimen on a specimen stage; irradiating a predetermined area in the specimen with an electron beam while scanning the electron beam, and acquiring an enlarged image of a specimen internal structure in the predetermined area; irradiating a specific portion included in the predetermined area and acquiring a diffraction image showing the crystal structure in the specimen; extracting information on the crystal structure in the specimen; displaying the information of the crystal structure in the specimen so as to be superimposed on the acquired enlarged image. The observation method according to the invention can obtain information on the crystal structure in a specimen with a high degree of sensitivity and with a high level of resolution.Type: GrantFiled: June 28, 2002Date of Patent: June 15, 2004Assignee: Hitachi, Ltd.Inventors: Masanari Koguchi, Kuniyasu Nakamura, Kaoru Umemura, Yoshifumi Taniguchi, Mikio Ichihashi
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Publication number: 20040061053Abstract: A method and apparatus for measuring the physical properties of a micro region measures the two-dimensional distribution of stress/strain in real time at high resolution and sensitivity and with a high level of measuring position matching. A sample is scanned and irradiated with a finely focused electron beam (23, 26), and the displacement of position of a diffraction spot (32, 33) is measured by a two-dimensional position-sensitive electron detector (13). The displacement amount is outputted as a voltage value that is then converted into the magnitude of the stress/strain according to the principle of a nano diffraction method, and the magnitude is displayed in synchronism with a sample position signal.Type: ApplicationFiled: August 7, 2003Publication date: April 1, 2004Inventors: Yoshifumi Taniguchi, Mikio Ichihashi, Masanari Kouguchi
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Publication number: 20030127595Abstract: A scanning transmission electron microscope (STEM) offering substantially the same ease of operation as that of a scanning electron microscope (SEM) and providing substantially the same degree of resolution as that of a transmission electron microscope (TEM). The STEM of the invention is constituted based on the constitution of the SEM.Type: ApplicationFiled: January 17, 2003Publication date: July 10, 2003Applicant: Hitachi, Ltd.Inventors: Kuniyasu Nakamura, Hiroshi Kakibayashi, Mikio Ichihashi, Shigeto Isakozawa, Yuji Sato, Takahito Hashimoto
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Patent number: 6531697Abstract: A scanning transmission electron microscope (STEM) has an electron source for generating a primary electron beam and an electron illuminating lens system for converging the primary electron beam from the electron source onto a specimen for illumination. An electron deflecting system is provided for scanning the specimen with the primary electron beam. The STEM also has a scattered electron detector for detecting scattered electrons transmitted through the specimen. A projection lens system projects the scattered electrons onto a detection surface of the scattered electron detector. An image displaying device displays the scanning transmission electron microscope image of the specimen using a detection signal from the scattered electron detector. A detection angle changing device for establishes the range of the scattering angle of the scattered electrons detected by the scattered electron detector.Type: GrantFiled: March 1, 1999Date of Patent: March 11, 2003Assignee: Hitachi, Ltd.Inventors: Kuniyasu Nakamura, Hiroshi Kakibayashi, Mikio Ichihashi, Shigeto Isakozawa, Yuji Sato, Takahito Hashimoto
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Patent number: 6512227Abstract: An object of the present invention is to provide an inspection method using an electron beam and an inspection apparatus therefor, which are capable of enhancing the resolution, improving the inspection speed and reliability, and realizing miniaturization the apparatus.Type: GrantFiled: October 22, 2001Date of Patent: January 28, 2003Assignee: Hitachi, Ltd.Inventors: Yuko Iwabuchi, Hideo Todokoro, Hiroyoshi Mori, Mitsugu Sato, Yasutsugu Usami, Mikio Ichihashi, Satoru Fukuhara, Hiroyuki Shinada, Yutaka Kaneko, Atsuko Takafuji, Hiroshi Toyama, Katsuya Sugiyama
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Publication number: 20030006373Abstract: Disclosed is an observation apparatus and method using an electron beam, capable of measuring information regarding a crystal structure in a specimen (such as information regarding stress and strain in the specimen) with high sensitivity and high resolution from an electron beam diffraction image obtained by irradiating the specimen with an electron beam.Type: ApplicationFiled: June 28, 2002Publication date: January 9, 2003Applicant: Hitachi. Ltd.Inventors: Masanari Koguchi, Kuniyasu Nakamura, Kaoru Umemura, Yoshifumi Taniguchi, Mikio Ichihashi
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Patent number: 6452178Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.Type: GrantFiled: June 19, 2001Date of Patent: September 17, 2002Assignee: Hitachi, Ltd.Inventors: Yuko Iwabuchi, Hideo Todokoro, Hiroyoshi Mori, Mitsugu Sato, Yasutsugu Usami, Mikio ichihashi, Satoru Fukuhara, Hiroyuki Shinada, Yutaka Kaneko, Katsuya Sugiyama, Atsuko Takafuji, Hiroshi Toyama
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Publication number: 20020092986Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.Type: ApplicationFiled: February 27, 2002Publication date: July 18, 2002Inventors: Yuko Iwabuchi, Hideo Todokoro, Hiroyoshi Mori, Mitsugu Sato, Yasutsugu Usami, Mikio Ichihashi, Satoru Fukuhara, Hiroyuki Shinada, Yutaka Kaneko, Katsuya Sugiyama, Atsuko Takafuji, Hiroshi Toyama
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Publication number: 20020024021Abstract: An object of the present invention is to provide an inspection method using an electron beam and an inspection apparatus therefor, which are capable of enhancing the resolution, improving the inspection speed and reliability, and realizing miniaturization the apparatus.Type: ApplicationFiled: October 22, 2001Publication date: February 28, 2002Applicant: Hitachi, Ltd.Inventors: Yuko Iwabuchi, Hideo Todokoro, Hiroyoshi Mori, Mitsugu Sato, Yasutsugu Usami, Mikio Ichihashi, Satoru Fukuhara, Hiroyuki Shinada, Yutaka Kaneko, Atsuko Takafuji, Hiroshi Toyama, Katsuya Sugiyama
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Patent number: 6348690Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The novel inspection method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.Type: GrantFiled: August 7, 1998Date of Patent: February 19, 2002Assignee: Hitachi, Ltd.Inventors: Yuko Iwabuchi, Hideo Todokoro, Hiroyoshi Mori, Mitsugu Sato, Yasutsugu Usami, Mikio Ichihashi, Satoru Fukuhara, Hiroyuki Shinada, Yutaka Kaneko, Katsuya Sugiyama, Atsuko Takafuji, Hiroshi Toyama
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Publication number: 20010030294Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.Type: ApplicationFiled: June 19, 2001Publication date: October 18, 2001Applicant: Hitachi, Ltd.Inventors: Yuko Iwabuchi, Hideo Todokoro, Hiroyoshi Mori, Mitsugu Sato, Yasutsugu Usami, Mikio Ichihashi, Satoru Fukuhara, Hiroyuki Shinada, Yutaka Kaneko, Katsuya Sugiyama, Atsuko Takafuji, Hiroshi Toyama
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Patent number: 6051834Abstract: 3-dimensional observation on the atomic arrangement and atomic species in a thin-film specimen are carried out at high speed and accuracy by an electron microscope which measures electrons emitted at high angle from the specimen. A scanning transmission electron microscope has an electron detection device comprising a scintillator converting electrons detected thereby to photons, a photoconductive-film converting photons from the scintillator detected thereby to c.a. 1000 times as many electron-hole pairs as these photons.Type: GrantFiled: July 30, 1998Date of Patent: April 18, 2000Assignee: Hitachi, Ltd.Inventors: Hiroshi Kakibayashi, Yasuhiro Mitsui, Hideo Todokoro, Katsuhiro Kuroda, Masanari Koguchi, Kazutaka Tsuji, Tatsuo Makishima, Mikio Ichihashi, Shigeto Isakozawa, Ruriko Tsuneta, Kuniyasu Nakamura, Kensuke Sekihara, Jun Motoike
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Patent number: 5866905Abstract: A scanning transmission electron microscope including an electron detection system having a scattering angle limiting aperture (for the inner angle) and a scattering angle limiting aperture (for the outer angle) between a specimen and an electron detector (comprising a scintillator and a light guide) and only one electron detector is installed.Type: GrantFiled: July 26, 1996Date of Patent: February 2, 1999Assignee: Hitachi, Ltd.Inventors: Hiroshi Kakibayashi, Yasuhiro Mitsui, Hideo Todokoro, Katsuhiro Kuroda, Masanari Koguchi, Kazutaka Tsuji, Tatsuo Makishima, Mikio Ichihashi, Shigeto Isakozawa, Ruriko Tsuneta, Kuniyasu Nakamura, Kensuke Sekihara, Jun Motoike
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Patent number: 5813776Abstract: A split seal paper sheet in which the width of split seals composing the split seal paper sheet in the direction of conveyance of the paper sheet is smaller than the print width of a serial head is used. One or more of the split seals is/are positioned in one scanning region of the serial head, to print an image on the split seals. Line feed for printing on one or more split seals in the subsequent line is performed in such a manner that the line feed width is the same as the print width of the serial head. Consequently, the entire image is formed on one split seal without conveying the paper sheet (performing line feed). Even if a pitch between lines becomes non-uniform in conveyance of the paper sheet, the image on the split seal is not degraded.Type: GrantFiled: November 5, 1997Date of Patent: September 29, 1998Assignee: Sanyo Electric Co., Ltd.Inventors: Susumu Fujiwara, Toshiyuki Watanabe, Yoshiaki Ishikawa, Mikio Ichihashi, Shigeki Shibuya, Nobuo Iwatsuki
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Patent number: 5783830Abstract: A sample evaluation/process observation system includes a common sample stage which accommodates a plurality of samples to be processed. The common sample stage is provided with a processing/observing notch and also with a movement mechanism. The movement mechanism functions to sequentially move the plurality of samples to the notch to cause the samples to be exposed to a predetermined processing beam and observing beam. The system further includes a beam processing device in which the common sample stage can be mounted and which functions to irradiate the predetermined processing beam on the plurality of samples through the notch to thereby sequentially perform beam processing operation over the samples. The system further includes a beam observation device in which the common sample stage can be mounted and which functions to irradiate the predetermined observing beam on the plurality of samples through the notch to sequentially observe and evaluate shapes of the plurality of samples.Type: GrantFiled: June 12, 1997Date of Patent: July 21, 1998Assignee: Hitachi, Ltd.Inventors: Hiroshi Hirose, Hidemi Koike, Shigeto Isakozawa, Yuji Sato, Mikio Ichihashi, Motohide Ukiana
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Patent number: 5552602Abstract: 3-dimensional observation on the atomic arrangement and atomic species in a thin-film specimen as well as conventional electron microscope observations is carried out at high speed and accuracy by an electron microscope which measures electrons emitted at high angle from the specimen. For that purpose, the present invention provides a scanning transmission electron microscope having an electron detection device comprising a scintillator converting electrons detected thereby to photons, a photoconductive-film converting photons from the scintillator detected thereby to c.a. 1000 times as many electron-hole pairs as these photons (i.d. avalanche multiplication), an electron gun emitting an electron beam toward the photoconductive-film to detect the holes generated therein, and electron deflector electrodes deflecting the electron beam on the photoconductive-film.Type: GrantFiled: March 6, 1995Date of Patent: September 3, 1996Assignee: Hitachi, Ltd.Inventors: Hiroshi Kakibayashi, Yasuhiro Mitsui, Hideo Tadokoro, Katsuhiro Kuroda, Masanari Koguchi, Kazutaka Tsuji, Tatsuo Makishima, Mikio Ichihashi, Shigeto Isakozawa
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Patent number: 5442183Abstract: A charged particle beam apparatus includes a charged particle beam generating system for causing a charged particle source to generate a charged particle beam. A focusing system focuses the charged particle beam onto a sample. A deflecting system causes the focused charged particle beam to scan the surface of the sample. An evacuating system evacuates a space through which the charged particle beam passes. A detector detects information obtained by irradiating the charged particle beam onto the sample. An image display system displays as an image the status of distribution of the information over the sample surface based on a detection signal forwarded from the detector. The focusing system is entirely constituted by an electrostatic lens containing a plurality of lens electrodes, one of the lens electrodes being a final electrode located closest to the sample.Type: GrantFiled: October 19, 1993Date of Patent: August 15, 1995Assignee: Hitachi, Ltd.Inventors: Hironobu Matsui, Mikio Ichihashi, Shinjiroo Ueda, Tadashi Otaka, Kazue Takahashi, Toshiaki Kobari, Kenji Odaka
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Patent number: 5442182Abstract: An electron lens comprising a first exciting coil, a second exciting coil, a casing for encompassing the first and second exciting coils, and an excitation control apparatus for controlling the excitation state of at least the first exciting coil independently of the second exciting coil. The excitation control apparatus independently controls currents applied to the first and second exciting coils, respectively. At this time, exothermy of each coil can be kept constant and thermal deformation of the casing can be prevented by keeping the sum of the absolute values of the currents applied to the coils.Type: GrantFiled: November 3, 1993Date of Patent: August 15, 1995Assignee: Hitachi, Ltd.Inventors: Toshiro Kubo, Toshiyuki Ohashi, Mikio Ichihashi, Yuji Sato
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Patent number: 5373158Abstract: An object of the present invention is to realize a field-emission transmission electron microscope which is able to cope with both observation of an electron-microscopic image of a high brightness and microanalysis. A low aberration condenser lens 4 is disposed at the farthest position from a specimen 7, and a short focal length lens 5 is disposed at the midpoint between the specimen 7 and the condenser lens 4. In the case of an observation of an electron-microscopic image, the condenser lens unit is operated for enlargement in which the condenser lens 4 and the condenser lens 5 are driven in an interlocking motion. When the size of a beam spot on a specimen is to be reduced, a condenser lens 6 disposed close to the specimen between the condenser lens 5 and the specimen 7 is driven to make the condenser lens unit be operated for reduction.Type: GrantFiled: June 1, 1993Date of Patent: December 13, 1994Assignee: Hitachi, Ltd.Inventors: Hisaya Murakoshi, Mikio Ichihashi
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Patent number: 5324950Abstract: Improvements in a charged particle beam apparatus are contemplated and especially a column structure incorporating a superhigh vacuum evacuation system is provided which is reduced in size and weight and has high performance. In order to evacuate surrounding space of a charged particle source to superhigh vacuum, ion pumps are built in a vacuum enclosure of a column. Each ion pump includes a magnet unit 15, a yoke and an electrode, and the magnet unit per se is built in the vacuum enclosure. A charged particle beam focusing optics for focusing and deflecting a charged particle beam from the charged particle beam source is arranged in a space which is defined interiorly of the yoke. The column structure can be reduced in size and weight and a charged particle beam apparatus having high performance can be obtained.Type: GrantFiled: July 15, 1992Date of Patent: June 28, 1994Assignee: Hitachi, Ltd.Inventors: Tadashi Otaka, Mikio Ichihashi