Abstract: A photoelectric conversion device comprising: an inorganic photoelectric conversion film; and an organic photoelectric conversion film, wherein an insulating film between the inorganic photoelectric conversion film and the organic photoelectric conversion film has a thickness of from 1 to 6 ?m, wherein the organic photoelectric conversion film has a multilayer structure comprising four or more layers, or wherein a protective film having a multilayer structure comprising three or more layers is provided on the organic photoelectric conversion film.

Abstract: An imaging device comprising: in-substrate photoelectric converting devices arranged on the same plane in a semiconductor substrate; on-substrate photoelectric converting devices, formed on the same plane above the semiconductor substrate, each of which corresponds to each of at least a part of the in-substrate photoelectric converting devices and comprises a first electrode formed above the semiconductor substrate, a photoelectric converting layer formed on the first electrode and a second electrode formed on the photoelectric converting layer; a color filter layer that is formed above the semiconductor substrate and transmits a light in a different wave range from a wave range of a light to be absorbed by the photoelectric converting layer; and a signal reading section that reads a signal corresponding to an electric charge generated in the on-substrate photoelectric converting device and a signal corresponding to an electric charge generated in the in-substrate photoelectric converting device respectively.

Abstract: A photoelectric conversion device comprising: a semiconductor substrate; an inorganic photoelectric conversion layer provided within the semiconductor substrate; and an organic photoelectric conversion layer provided above the inorganic photoelectric conversion layer, wherein the organic photoelectric conversion layer is prepared by a shadow mask method.

Abstract: An image processing apparatus includes a color image data generation section 54 that generates color image data from an image pickup signal of a red component, an image pickup signal of a green component, and an image pickup signal of a blue component which are output from an image pickup device 100; an infrared image data generation section 53 that generates infrared image data from an image pickup signal of an infrared component output from the image pickup device 100; and a high-contrast infrared image data generation section 55 that generates high-contrast infrared image data using the color image data and the infrared image data. Contrast of the high-contrast infrared image data is more enhanced than that of the infrared image data.

Abstract: A photoelectric conversion device comprising: a semiconductor substrate; an inorganic photoelectric conversion layer provided within the semiconductor substrate; and an organic photoelectric conversion layer provided above the inorganic photoelectric conversion layer, wherein the organic photoelectric conversion layer is prepared by a shadow mask method.

Abstract: A photoelectric conversion device comprising: a semiconductor substrate; an inorganic photoelectric conversion layer provided within the semiconductor substrate; and an organic photoelectric conversion layer provided above the inorganic photoelectric conversion layer, wherein the organic photoelectric conversion layer is prepared by a shadow mask method.

Abstract: A silver halide photographic emulsion comprising grains is characterized that 70% or more of the total projected area of the grains are occupied by tabular grains meeting requirements (i) to (v) below: (i) silver bromochloroiodide grains having (111) faces as major surfaces, (ii) hexagonal grains having a ratio of the length of an edge having the maximum length to the length of an edge having the minimum length of not more than 2, (iii) perfect epitaxial grains having a total of six epitaxial junctions each existing only in each of six apex portions of the hexagonal grains, (iv) the silver chloride content is 1 to 6 mol %, and (v) the silver iodide content is 0.5 to 10 mol %.

Abstract: An imaging device comprising: in-substrate photoelectric converting devices arranged on the same plane in a semiconductor substrate; on-substrate photoelectric converting devices, formed on the same plane above the semiconductor substrate, each of which corresponds to each of at least a part of the in-substrate photoelectric converting devices and comprises a first electrode formed above the semiconductor substrate, a photoelectric converting layer formed on the first electrode and a second electrode formed on the photoelectric converting layer; a color filter layer that is formed above the semiconductor substrate and transmits a light in a different wave range from a wave range of a light to be absorbed by the photoelectric converting layer; and a signal reading section that reads a signal corresponding to an electric charge generated in the on-substrate photoelectric converting device and a signal corresponding to an electric charge generated in the in-substrate photoelectric converting device respectively.

Abstract: An image processing apparatus includes a color image data generation section 54 that generates color image data from an image pickup signal of a red component, an image pickup signal of a green component, and an image pickup signal of a blue component which are output from an image pickup device 100; an infrared image data generation section 53 that generates infrared image data from an image pickup signal of an infrared component output from the image pickup device 100; and a high-contrast infrared image data generation section 55 that generates high-contrast infrared image data using the color image data and the infrared image data. Contrast of the high-contrast infrared image data is more enhanced than that of the infrared image data.

Abstract: A silver halide photographic emulsion comprising silver halide grains, wherein a variation coefficient of equivalent-circle diameters of all the silver halide grains is 30% or less, and 70% or more of the total projected area of the silver halide grains are occupied by silver halide grains each meeting requirements (i), (ii), and (iii) below: (i) silver bromochloroiodide grain having (111) faces as main planes, (ii) having an epitaxial portion junctioned to at least one apex portion thereof, and (iii) having at least one dislocation line in an epitaxial portion thereof.

Abstract: A device for DNA analysis includes: an imaging device having a plurality of pixel parts; and microarrays arranged and fixed on a surface on a side of light incidence of the imaging device, wherein each of the plurality of pixel parts includes plural kinds of photoelectric conversion parts stacked on a semiconductor substrate and each capable of detecting light with a different wavelength region from each other to generate a charge corresponding thereto; the plural kinds of photoelectric conversion parts are stacked such that they are able to receive light from the same subject; and the plural kinds of photoelectric conversion parts are each configured of at least one photoelectric conversion device having sensitivity to the light to be detected in the photoelectric conversion part and arranged on a same plane.

Abstract: A silver halide-holographic sensitive material is provided and has a support and at least one photosensitive emulsion layer, with the photosensitive emulsion layer containing silver halide particles whose number average projected-area diameter is from 10 nm to 80 nm.

Abstract: A silver halide-holographic sensitive material is provided and has a support and at least one photosensitive emulsion layer, with the photosensitive emulsion layer containing silver halide particles whose number average projected-area diameter is from 10 nm to 80 nm.

Abstract: A photoelectric conversion device comprising: a semiconductor substrate; an inorganic photoelectric conversion layer provided within the semiconductor substrate; and an organic photoelectric conversion layer provided above the inorganic photoelectric conversion layer, wherein the organic photoelectric conversion layer is prepared by a shadow mask method.

Abstract: A photoelectric conversion device comprising: an inorganic photoelectric conversion film; and an organic photoelectric conversion film, wherein an insulating film between the inorganic photoelectric conversion film and the organic photoelectric conversion film has a thickness of from 1 to 6 ?m, wherein the organic photoelectric conversion film has a multilayer structure comprising four or more layers, or wherein a protective film having a multilayer structure comprising three or more layers is provided on the organic photoelectric conversion film.

Abstract: A silver halide-holographic sensitive material is provided and has a support and at least one photosensitive emulsion layer, with the photosensitive emulsion layer containing silver halide particles whose number average projected-area diameter is from 10 nm to 80 nm.

Abstract: An imaging sensor having a stacked structure of at least three layers capable of absorbing/photoelectrically converting electromagnetic waves of at least blue light, green light and red light, and further comprising at least one construction selected from those where at least one of an ultraviolet absorbing layer, an infrared absorbing layer, a black visible light absorbing layer, a fourth electromagnetic wave absorption/photoelectric conversion layer and a yellow filter layer is provided, or where the electromagnetic wave absorption/photoelectric conversion portion is separated into two layers of high-sensitivity layer and low-sensitivity layer.

Abstract: A silver halide emulsion containing water, dispersion medium comprising modified gelatin whose amino group is chemically modified, and silver halide grains comprising spectrally sensitized silver halide grains each having a multilayer adsorption of dye chromophores on the surface thereof. A method of preparing the silver halide emulsion. A silver halide photosensitive material contains the silver halide emulsion in a light-sensitive silver halide emulsion layer thereof.

Abstract: A silver halide photographic emulsion comprising grains, wherein 50% or more (numerical ratio) of all the grains are occupied by tabular grains with epitaxial junction meeting the requirements (i) to (v): (i) silver iodochlorobromide grains having (111) faces as main planes and having two parallel twin planes, (ii) an equivalent circle diameter of 3.0 ?m or more and an aspect ratio of 8 or more, (iii) each of host tabular grains has six silver halide epitaxial junction portions selectively in apex portions thereof, (iv) at least one of the silver halide epitaxial junction portions has at least one dislocation line, and (v) a spacing between the two parallel twin planes of 0.012 ?m or less.

Abstract: A silver halide emulsion containing water, dispersion medium comprising modified gelatin whose amino group is chemically modified, and silver halide grains comprising spectrally sensitized silver halide grains each having a multilayer adsorption of dye chromophores on the surface thereof. A method of preparing the silver halide emulsion. A silver halide photosensitive material contains the silver halide emulsion in a light-sensitive silver halide emulsion layer thereof.