Abstract: There is provided a plasma processing apparatus including: a chamber having a processing space in which a plasma processing is performed on a substrate and a synthetic space in which electromagnetic waves are synthesized; a dielectric window configured to partition the processing space and the synthetic space; an antenna unit including a plurality of antennas configured to radiate the electromagnetic waves to the synthetic space; an electromagnetic wave output part configured to output the electromagnetic waves to the antenna unit; and a controller configured to control the antenna unit to function as the phased array antenna, wherein the plurality of antennas are helical antennas.

Abstract: An indirect agglutination immunoassay includes the steps of providing, in a container, an immunoassay system comprising a test sample containing a desired analyte, and a reagent composed of magnetic particles or magnetic-material containing particles containing iron therein, wherein the magnetic particles or magnetic-material containing particles have been sensitized to allow specific binding to the desired analyte, and have a particle size in the range of 1 to 5 &mgr;m, with the content of the iron being in the range of 8 to 20 wt. %, precipitating the magnetic particles or magnetic-material containing particles by the application of magnetic force, allowing the container to stand at an inclination, and detecting the presence or absence of an immune reaction from the absence or presence of slippage observed of the precipitated magnetic particles or magnetic-material containing particles on the bottom of the container.

Abstract: In a miniaturized complete CMOS SRAM of a TFT load type, a field effect thin-film transistor (TFT) can achieve stable reading and writing operation of a memory cell and can reduce power consumption thereof. The field effect thin-film transistor formed on an insulator includes an active layer and a gate electrode. The gate electrode is formed on a channel region of the active layer with a gate insulating film therebetween. The active layer is formed of a channel region and source/drain regions. The channel region is formed of a monocrystal silicon layer and does not includes a grain boundary. The source/drain regions is formed of a polysilicon layer. The channel region has a density of crystal defects of less than 10.sup.9 pieces/cm.sup.2. The thin film transistor shows an ON current of 0.25 .mu.A/.mu.m per channel width of 1 .mu.m and an OFF current of 15 fA/.mu.m. The thin-film transistor can be applied to a p-channel MOS transistor serving as a load transistor in a memory cell of a CMOS type SRAM.

Abstract: In a miniaturized complete CMOS SRAM of a TFT load type, a field effect thin-film transistor (TFT) can achieve stable reading and writing operation of a memory cell and can reduce power consumption thereof. The field effect thin-film transistor formed on an insulator includes an active layer and a gate electrode. The gate electrode is formed on a channel region of the active layer with a gate insulating film therebetween. The active layer is formed of a channel region and source/drain regions. The channel region is formed of a monocrystal silicon layer and does not includes a grain boundary. The source/drain regions is formed of a polysilicon layer. The channel region has a density of crystal defects of less than 10.sup.9 pieces/cm.sup.2. The thin film transistor shows an ON current of 0.25 .mu.A/.mu.m per channel width of 1 .mu.m and an OFF current of 15 fA/.mu.m. The thin-film transistor can be applied to a p-channel MOS transistor serving as a load transistor in a memory cell of a CMOS type SRAM.

Abstract: A method of logic simulation includes the steps of reading delay time of a logic element itself calculated in advance, converting output logic value of the logic element to a voltage value, forming a circuit equation based on connection information of an output impedance circuit of the logic element, calculating a voltage value at an arbitrary node of the output impedance circuit by solving the circuit equation, and converting a voltage value of an input node of a logic element of the succeeding stage to a logic value.

Abstract: A rust removing agent for a stainless steel surface of an aqueous solution of phosphoric acid, a polyhydroxymonocarboxylic acid or a salt thereof and a surfactant.

Abstract: An artificial carrier for immobilization of biological proteins, which are composed of particles comprising gelatin, an alkali metal metaphosphate and an anionic high-molecular electrolyte, said particles being water-insolubilized by a treatment with an aldehyde.

Abstract: A magnetic particulate comprising gelatin, water-soluble polysaccharide, sodium polymetaphosphate and ferromagnetic substance, which is used as a carrier for immobilization of biological proteins such as antigens, antibodies or enzymes, and a process of producing the magnetic particulate.

Abstract: A novel artificial carrier is disclosed which is prepared from gelatin, a water-soluble polysaccharide, a sodium metaphosphate and an aldehyde. The carrier can be used to immobilize antibodies, antigens or enzymes. Immobilized antigens and antibodies can be used as a diagnostic reagent in assays involving antigen-antibody reactions.

Abstract: The invention discloses a low NO.sub.x emission burner for use with an apparatus in which the material or materials are heated by the heat radiated from the radiation surface which is heated by the combustion by the burners. The secondary air injection ports or outlets are so arranged as to inject the secondary air upon the radiation surface to control the combustion, thereby reducing the release of NO.sub.x without producing CO and soot.