Patents by Inventor Mikio Kinka
Mikio Kinka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 5296405Abstract: An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.Type: GrantFiled: August 24, 1992Date of Patent: March 22, 1994Assignee: Semiconductor Energy Laboratory Co.., Ltd.Inventors: Shunpei Yamazaki, Kunio Suzuki, Susumu Nagayama, Takashi Inujima, Masayoshi Abe, Takeshi Fukada, Mikio Kinka, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Kaoru Koyanagi
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Patent number: 5171710Abstract: An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.Type: GrantFiled: May 9, 1990Date of Patent: December 15, 1992Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Kunio Suzuki, Susumu Nagayama, Takashi Inujima, Masayoshi Abe, Takeshi Fukada, Mikio Kinka, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Kaoru Koyanagi
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Patent number: 5089426Abstract: An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for provessing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. By virtue of this configuration, short current paths do not result even if transparent electrode is provided on the semiconductor layer.Type: GrantFiled: January 16, 1990Date of Patent: February 18, 1992Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Kunio Suzuki, Masato Susukida, Mikio Kinka, Takeshi Fukada, Masayoshi Abe, Ippei Kobayashi, Katsuhiko Shibata, Kaoru Koyanagi, Susumu Nagayama
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Patent number: 5039928Abstract: A portable electric appliance is provided with a solar energy accumulator. The accumulator is integrally mounted on the electric appliance when the appliance is desired to operate or be transported. When the portable electric appliance is not used, the accumulator is removed from the appliance and moved to a bright place.Type: GrantFiled: December 11, 1989Date of Patent: August 13, 1991Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kazuo Nishi, Kunio Suzuki, Mikio Kinka, Akemi Satake, Shuichi Kugawa
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Patent number: 5035753Abstract: A solar cell comprises a plurality of series connected photoelectric conversion structures formed on a substrate. The conversion structure consists of a first semiconductor film on a P-type, an intrinsic semiconductor film formed on the first semiconductor film such that one end thereof extends beyond an end of the first semiconductor film and a second semiconductor film of a second, opposite conductivity type formed on the intrinsic semiconductor film such that one end thereof extends beyond the extended end of the intrinsic semiconductor film and makes direct electrical contact with an end of the first semiconductor film of the adjacent structure.Type: GrantFiled: December 22, 1989Date of Patent: July 30, 1991Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kunio Suzuki, Masayoshi Abe, Mikio Kinka, Yasuyuki Arai, Akemi Satake, Kazuo Nishi, Shuichi Kugawa, Noriya Ishida
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Patent number: 4986213Abstract: An improved semiconductor processing is desclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.Type: GrantFiled: September 28, 1988Date of Patent: January 22, 1991Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Kunio Suzuki, Susumu Nagayama, Takashi Inujima, Masayoshi Abe, Takeshi Fukada, Mikio Kinka, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Kaoru Koyanagi
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Patent number: 4987005Abstract: An improved method for manufacturing uniform films or etching uniformly on a plurality of substrates is shown. The substrates are vertically placed in a reaction chamber so as to be treated at once. A chemical vapor reaction takes place by virtue of a high frequency electric power which is modulated in its amplitude. By this modulation, the deposition or etching can be carried out over the surface of a susbtrate.Type: GrantFiled: August 21, 1989Date of Patent: January 22, 1991Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kunio Suzuki, Takeshi Fukada, Mikio Kinka, Masayoshi Abe, Katsuhiko Shibata, Masato Susukida, Noriya Ishida, Akemi Satake, Yasuyuki Arai
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Patent number: 4937651Abstract: An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes.Type: GrantFiled: August 22, 1986Date of Patent: June 26, 1990Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Kunio Suzuki, Mikio Kinka, Takeshi Fukada, Masayoshi Abe, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Susumu Nagayama, Kaoru Koyanagi
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Patent number: 4888305Abstract: An improved semiconductor processing is disclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.Type: GrantFiled: March 9, 1989Date of Patent: December 19, 1989Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Kunio Suzuki, Susumu Nagayama, Takashi Inujima, Masayoshi Abe, Takeshi Fukada, Mikio Kinka, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Kaoru Koyanagi
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Patent number: 4847669Abstract: An improved tandem photoelectric conversion device is shown. The device comprises at least two photoelectric conversion semiconductor assemblies. The assembly located behind the other has higher crystallinity then the other, so that light with a long wavelength passing through the front assembly be converted into electricity at the back assembly. In the device, an intrinsic semiconductor layer is formed by an ECR CVD system.Type: GrantFiled: December 17, 1986Date of Patent: July 11, 1989Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masayoshi Abe, Susumu Nagayama, Kunio Suzuki, Takeshi Fukada, Mikio Kinka, Katsuhiko Shibata, Masato Susukida
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Patent number: 4828668Abstract: An improved sputtering system for depositing film on a substrate is disclosed. The system comprises a vacuum chamber, a pair of electrodes with a target inbetween, a cart on which a plurality of substrates are mounted and a transportation mechanism for transporting the cart passing through the deposition space between the electrodes. The substrates are mounted perpendicular to the electric field induced by the pair of electrodes.Type: GrantFiled: March 9, 1987Date of Patent: May 9, 1989Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Kunio Suzuki, Mikio Kinka, Takeshi Fukada, Masayoshi Abe, Katsuhiko Shibata, Hisato Shinohara, Masato Susukida
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Patent number: 4812415Abstract: An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced during the fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. By virtue of this configuration, short current paths do not result when electrodes are provided on the semiconductor layer.Type: GrantFiled: August 6, 1987Date of Patent: March 14, 1989Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Kunio Suzuki, Mikio Kinka, Takeshi Fukada, Masayoshi Abe, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Susumu Nagayama, Kaoru Koyanagi
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Patent number: 4806496Abstract: Photoelectric conversion devices are manufactured at high yield by repairing the devices during the final steps of the manufacuturing process. Short current paths resulting from the formation process of semiconductor layers can be eliminated by applying a reverse voltage to the layers, which thus are heated and made insulating. After the elimination of the short current paths, the reverse current no longer passes beyond 15 mA on a reverse voltage of 8 V.Type: GrantFiled: January 28, 1987Date of Patent: February 21, 1989Assignee: Semiconductor Energy Laboratory Co. Ltd.Inventors: Kunio Suzuki, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Mikio Kinka, Takeshi Fukada, Susumu Nagayama, Masayoshi Abe, Shunpei Yamazaki
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Patent number: 4786607Abstract: An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processsing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes.Type: GrantFiled: September 4, 1987Date of Patent: November 22, 1988Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shumpei Yamazaki, Kunio Suzuki, Mikio Kinka, Takeshi Fukada, Masayoshi Abe, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Susumu Nagayama, Kaoru Koyanagi
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Patent number: 4725558Abstract: An improved semiconductor defects curing method and apparatus are disclosed which is free from current leakage due to pin-holes or other defects. Also an improved method for processing a semiconductor device is shown. According to the invention, the gaps or holes in the semiconductor layer produced in the fabrication process are filled with insulator in advance of deposition of electrodes.Type: GrantFiled: November 6, 1986Date of Patent: February 16, 1988Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Kunio Suzuki, Mikio Kinka, Takeshi Fukada, Masayoshi Abe, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Susumu Nagayama, Kaoru Koyanagi