Abstract: A magnetic memory device includes a memory cell array comprising memory cells including magnetic tunnel junction elements. Each memory cell is electrically connected between a source line and a bit line. A control circuit is configured to perform a screening test on the memory cell array before writing data to the memory cell array. The screening test determines whether an abnormal cell is present in the memory cell array. The controller applies a first writing voltage to the write data to the memory cell array if the abnormal cell is not present, or applies a second writing voltage to write data to the memory cell array if the abnormal cell is present. The second writing voltage is different from the first writing voltage.

Abstract: According to one embodiment, a memory includes a magnetoresistive element, a reference cell, a sense amplifier comparing a first current flowing in the magnetoresistive element with a second current flowing in the reference cell, a first transistor having a first control terminal controlling a value of the first current, a second transistor having a second control terminal controlling a value of the second current, and a controller applying a first potential to the first control terminal and a second potential to the second control terminal in a first operation, and applying the first potential to the first control terminal and a third potential larger than the second potential to the second control terminal in a second operation.

Abstract: A magnetic memory device includes a memory cell array comprising memory cells including magnetic tunnel junction elements. Each memory cell is electrically connected between a source line and a bit line. A control circuit is configured to perform a screening test on the memory cell array before writing data to the memory cell array. The screening test determines whether an abnormal cell is present in the memory cell array. The controller applies a first writing voltage to the write data to the memory cell array if the abnormal cell is not present, or applies a second writing voltage to write data to the memory cell array if the abnormal cell is present. The second writing voltage is different from the first writing voltage.

Abstract: According to one embodiment, a memory includes a magnetoresistive element, a reference cell, a sense amplifier comparing a first current flowing in the magnetoresistive element with a second current flowing in the reference cell, a first transistor having a first control terminal controlling a value of the first current, a second transistor having a second control terminal controlling a value of the second current, and a controller applying a first potential to the first control terminal and a second potential to the second control terminal in a first operation, and applying the first potential to the first control terminal and a third potential larger than the second potential to the second control terminal in a second operation.

Abstract: According to one embodiment, a memory device includes a first memory element being able to store data, and a second memory element storing information relating to the first memory element, wherein the information of the second memory element is rewritten by a power amount, which is greater than a power amount at a time when the data is written in the first memory element, being supplied to the second memory element.

Abstract: According to one embodiment, a magnetic field applying apparatus includes a stage on which a semiconductor wafer having a major surface provided with a magnetoresistive effect element is placed, and an external magnetic field supplying unit configured to supply an external magnetic field to the semiconductor wafer planed on the stage. The external magnetic field supplying unit is provided on a reverse surface side or a lateral surface side of the semiconductor wafer placed on the stage.

Abstract: A semiconductor device that generates a desired internal power supply by using, as a reference potential, a potential obtained by adjusting a preset standard potential, the semiconductor device comprises; a reference potential selection circuit selecting the reference potential on the basis of digital data from among a plurality of potentials of different levels which are obtained by dividing a power supply voltage, and outputting the reference potential instead of the standard potential; a first decision circuit deciding bits of the digital data; a second decision circuit deciding the bits of the digital data, separately from the first decision circuit; and a data transfer circuit transferring to the reference potential selection circuit the digital data which is decided by either one of the first and second decision circuits.

Abstract: A semiconductor device that generates a desired internal power supply by using, as a reference potential, a potential obtained by adjusting a preset standard potential, the semiconductor device comprises; a reference potential selection circuit selecting said reference potential on the basis of digital data from among a plurality of potentials of different levels which are obtained by dividing a power supply voltage, and outputting said reference potential in place of said standard potential; a first decision circuit deciding bits of said digital data; a second decision circuit deciding the bits of said digital data, separately from said first decision circuit; and a data transfer circuit transferring to said reference potential selection circuit said digital data which is decided by either one of said first and second decision circuits.

Abstract: The present invention is to provide a highly effective agent for preventing and treating opacity of lens, containing the organic germanium compound represented by the fornula (1); ##STR1## (wherein R1 to R3 represent hydrogen atoms, lower alkyl groups each of which may be the same or different and selected from the group consisting of methyl group, ethyl group, etc., or phenyl groups substituted or unsubstituted; X represents a hydroxyl group, an O-lower alkyl group, an amino group or O.sup.- Y.sup.+ {Y represents a metal such as sodium, potassium, etc., or a compound having a basic group such as lysozyme and basic amino acid, etc.})or (2) a combination of the organic germanium compound and aminoguanidien, or (3) a combination of the organic germanium compound specifically defined above and the specific phenoxazine derivative.