Patents by Inventor Mikio Nakasuji

Mikio Nakasuji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Organic EL element and organic EL display
    Patent number: 7157157
    Abstract: There is provided an organic EL element including an anode, a cathode, and an organic layer, wherein the cathode includes a protective conductor layer which faces the organic layer, a main conductor layer which is interposed between the protective conductor layer and the organic layer, and a barrier layer which is interposed between the protective conductor layer and the main conductor layer and made of an insulator or a semiconductor.
    Type: Grant
    Filed: May 19, 2005
    Date of Patent: January 2, 2007
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Matsushita Display Technology Co., Ltd.
    Inventors: Kazushige Yamamoto, Mikio Nakasuji
  • Organic EL element and organic EL display
    Publication number: 20050214578
    Abstract: There is provided an organic EL element including an anode, a cathode, and an organic layer, wherein the cathode includes a protective conductor layer which faces the organic layer, a main conductor layer which is interposed between the protective conductor layer and the organic layer, and a barrier layer which is interposed between the protective conductor layer and the main conductor layer and made of an insulator or a semiconductor.
    Type: Application
    Filed: May 19, 2005
    Publication date: September 29, 2005
    Inventors: Kazushige Yamamoto, Mikio Nakasuji
  • Semiconductor laser using gallium nitride series compound semiconductor
    Patent number: 6252894
    Abstract: A semiconductor laser is formed of gallium nitride series compound semiconductor and has a double hetero structure including an MQW (multiple quantum well) active layer held between p-type and n-type AlGaN clad layers. The double hetero structure is held between p-type and n-type contact layers. An InGaN optical absorption layer having an optical absorption coefficient larger than the clad layer which has the same conductivity type as the contact layer and is formed adjacent to the contact layer is formed in at least one of the contact layers and an InAlGaN optical guided mode control layer (layer of small refractive index) having an refractive index smaller than the clad layer is formed on the exterior of the optical absorption layer.
    Type: Grant
    Filed: March 5, 1999
    Date of Patent: June 26, 2001
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Katsunobu Sasanuma, Shinji Saito, Genichi Hatakoshi, Kazuhiko Itaya, Masaaki Onomura, Risa Sugiura, Mikio Nakasuji, Hidetoshi Fujimoto, Masahiro Yamamoto, Shinya Nunoue