Abstract: There is provided a substrate processing apparatus including: a process chamber configured to accommodate and process a plurality of substrates arranged with intervals therebetween; a first nozzle extending along a stacking direction of the substrates and configured to supply a hydrogen-containing gas into the process chamber; and a second nozzle extending along the stacking direction of the substrates and configured to supply an oxygen-containing gas into the process chamber, wherein the first nozzle includes a plurality of first gas supply holes disposed in a region extending from an upper portion to a lower portion of the first nozzle corresponding to a substrate arrangement region where the substrates are arranged, and the second nozzle includes a plurality of second gas supply holes disposed at an upper portion and a lower portion of the second nozzle to correspond to upper substrates and lower substrates of the substrates.

Abstract: There is provided a gas supply system including a supplying part connected to a reaction vessel and a blocking part provided at an upstream side of the supplying part and directly connected to the supplying part without providing a pipe between the blocking part and the supplying part. The gas supply system further including a switching part provided at an upstream side of the blocking part and configured to supply a gas into the reaction vessel in cooperation with the blocking part and an exhaust part configured to exhaust an inside of a pipe provided between the switching part and the blocking part.

Abstract: There is provided a substrate processing apparatus including a process chamber defined at least by a reaction tube and a furnace opening part provided at a lower portion of the reaction tube; a nozzle provided at the furnace opening part and extending from the furnace opening part to an inside of the reaction tube; a gas supply system provided at an upstream side of the nozzle; a blocking part provided at a boundary between the gas supply system and the nozzle; and a controller configured to control the gas supply system and the blocking part such that the blocking part co-operates with the gas supply system to supply gases into the process chamber through the nozzle.

Abstract: Described herein is a technique capable of suppressing an air atmosphere from entering a process chamber. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate support configured to support a substrate; a process chamber having a first space where the substrate is processed; an exhaust part configured to exhaust atmosphere of the first space; and a gas supply system including: a gas introduction pipe configured to supply gas to the first space; a process gas transfer pipe configured to communicate with the gas introduction pipe; a joint part configured to cover an adjacent part provided adjacent to the gas introduction pipe and the process gas transfer pipe in a second space outside the first space, and configured to fix the gas introduction pipe with the process gas transfer pipe; and a pressure adjustment part provided between the adjacent part and the second space.

Abstract: There is installed a configuration that includes a process container; a heater chamber exhaust duct configured to discharge an air that has cooled a space at which a heater is installed; a gas box exhaust duct configured to suck and discharge an atmosphere in a gas box; a scavenger exhaust duct configured to suck and discharge an atmosphere in a scavenger; a local exhaust duct configured to suck and discharge an atmosphere in a local exhaust port installed in a transfer chamber; an exhaust damper valve including an opening degree variable mechanism installed in at least one selected from the group of the heater chamber exhaust duct, the gas box exhaust duct, the scavenger exhaust duct, and the local exhaust duct; and a controller configured to remotely control an opening degree of the exhaust damper valve.

Abstract: There is installed a configuration that includes a process container; a heater chamber exhaust duct configured to discharge an air that has cooled a space at which a heater is installed; a gas box exhaust duct configured to suck and discharge an atmosphere in a gas box; a scavenger exhaust duct configured to suck and discharge an atmosphere in a scavenger; a local exhaust duct configured to suck and discharge an atmosphere in a local exhaust port installed in a transfer chamber; an exhaust damper valve including an opening degree variable mechanism installed in at least one selected from the group of the heater chamber exhaust duct, the gas box exhaust duct, the scavenger exhaust duct, and the local exhaust duct; and a controller configured to remotely control an opening degree of the exhaust damper valve.

Abstract: There is provided a substrate processing apparatus including a process chamber defined at least by a reaction tube and a furnace opening part provided at a lower portion of the reaction tube; a nozzle provided at the furnace opening part and extending from the furnace opening part to an inside of the reaction tube; a gas supply system provided at an upstream side of the nozzle; a blocking part provided at a boundary between the gas supply system and the nozzle; and a controller configured to control the gas supply system and the blocking part such that the blocking part co-operates with the gas supply system to supply gases into the process chamber through the nozzle.

Abstract: There is provided a substrate processing apparatus including a process chamber defined at least by a reaction tube and a furnace opening part provided at a lower portion of the reaction tube; a nozzle provided at the furnace opening part and extending from the furnace opening part to an inside of the reaction tube; a gas supply system provided at an upstream side of the nozzle; a blocking part provided at a boundary between the gas supply system and the nozzle; and a controller configured to control the gas supply system and the blocking part such that the blocking part co-operates with the gas supply system to supply gases into the process chamber through the nozzle.

Abstract: Described herein is a technique capable of suppressing an air atmosphere from entering a process chamber. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate support configured to support a substrate; a process chamber having a first space where the substrate is processed; an exhaust part configured to exhaust atmosphere of the first space; and a gas supply system including: a gas introduction pipe configured to supply gas to the first space; a process gas transfer pipe configured to communicate with the gas introduction pipe; a joint part configured to cover an adjacent part provided adjacent to the gas introduction pipe and the process gas transfer pipe in a second space outside the first space, and configured to fix the gas introduction pipe with the process gas transfer pipe; and a pressure adjustment part provided between the adjacent part and the second space.

Abstract: There is provided a substrate processing apparatus including a process chamber defined at least by a reaction tube and a furnace opening part provided at a lower portion of the reaction tube; a nozzle provided at the furnace opening part and extending from the furnace opening part to an inside of the reaction tube; a gas supply system provided at an upstream side of the nozzle; a blocking part provided at a boundary between the gas supply system and the nozzle; and a controller configured to control the gas supply system and the blocking part such that the blocking part co-operates with the gas supply system to supply gases into the process chamber through the nozzle.

Abstract: A configuration including a process chamber for processing a substrate, a gas supply system including supply pipe for supplying a source gas into the process chamber, and an exhaust system including exhaust pipe for discharging an exhaust gas containing the source gas from the process chamber, in which at least one of the supply pipe and the exhaust pipe includes an inner pipe constituting a first flow path of the source gas or the exhaust gas, a member provided outside the inner pipe and constituting a second flow path between the member and an outer wall of the inner pipe, and an outer pipe provided surrounding the inner pipe in order to provide a space between the outer pipe and an outside of the member.

Abstract: There is provided a substrate processing apparatus including: a process chamber configured to accommodate and process a plurality of substrates arranged with intervals therebetween; a first nozzle extending along a stacking direction of the substrates and configured to supply a hydrogen-containing gas into the process chamber; and a second nozzle extending along the stacking direction of the substrates and configured to supply an oxygen-containing gas into the process chamber, wherein the first nozzle includes a plurality of first gas supply holes disposed in a region extending from an upper portion to a lower portion of the first nozzle corresponding to a substrate arrangement region where the substrates are arranged, and the second nozzle includes a plurality of second gas supply holes disposed at an upper portion and a lower portion of the second nozzle to correspond to upper substrates and lower substrates of the substrates.

Abstract: Provided is a method for producing a high-purity tungsten powder having a phosphorus content of less than 1 wtppm; wherein an ammonium tungstate solution containing 1 wtppm or more of phosphorus as an impurity in terms of the inclusion in tungsten is used as a starting material, this solution is neutralized with hydrochloric acid at a temperature of 50° C. or less to adjust the pH at 4 or more and less than 7 so as to precipitate ammonium paratungstate undecahydrate crystals, the resulting solution is heated to 70 to 90° C. and filtered in a high-temperature state so as to obtain ammonium paratungstate pentahydrate crystals, the obtained crystals are calcined so as to form a tungsten oxide, and the tungsten oxide is subject to hydrogen reduction so as to obtain a high-purity tungsten powder. Additionally provided is a method for producing a high-purity tungsten powder having a phosphorus content of 0.

Abstract: Provided is a method for producing a high-purity tungsten powder having a phosphorus content of less than 1 wtppm; wherein an ammonium tungstate solution containing 1 wtppm or more of phosphorus as an impurity in terms of the inclusion in tungsten is used as a starting material, this solution is neutralized with hydrochloric acid at a temperature of 50° C. or less to adjust the pH at 4 or more and less than 7 so as to precipitate ammonium paratungstate undecahydrate crystals, the resulting solution is heated to 70 to 90° C. and filtered in a high-temperature state so as to obtain ammonium paratungstate pentahydrate crystals, the obtained crystals are calcined so as to form a tungsten oxide, and the tungsten oxide is subject to hydrogen reduction so as to obtain a high-purity tungsten powder. Additionally provided is a method for producing a high-purity tungsten powder having a phosphorus content of 0.

Abstract: Stagnation of gas used for substrate processing in an exhaust trap is prevented, and localized precipitation of components in the gas used for substrate processing is reduced.

Abstract: A leader tape has, on at least one face of a support, a coating layer that contains a powder and a binder, which is characterized in that the center line average roughness (Ra) of at least one face of the leader tape is from 10 to 60 nm, the leader tape is used in a magnetic recording and reproduction device where the line recording density is at least 100 kfci, and the difference between the recording track width and the reproduction track width is from 0 to 16 ?m.

Abstract: The magnetic recording medium comprises a magnetic layer comprising a ferromagnetic powder and a binder on a nonmagnetic support. The magnetic layer has an average surface roughness Ra, measured by an atomic force microscope, ranging from 2.0 to 3.5 nm and an indentation hardness ranging from 0.49 GPa to 0.78 GPa, as well as further comprises a carbonic ester having a molecular weight of 360 to 460 that is denoted by general formula (1). In general formula (1), R1 denotes a saturated hydrocarbon group having a branched structure, and R2 denotes a saturated hydrocarbon group having a linear structure with 14 to 20 carbon atoms.

Abstract: A leader tape where an non-magnetic under layer that contains a powder and a binder and a magnetic upper layer are sequentially laminated on at least one face of a support, in which F5 values of the support in a machine direction (MD) and in a transverse direction (TD) are from 80 to 120 MPa respectively, the F5 value in MD is larger than that in TD, and a difference between the F5 value in MD and that in TD is 15 MPa or less.

Abstract: Stagnation of gas used for substrate processing in an exhaust trap is prevented, and localized precipitation of components in the gas used for substrate processing is reduced.

Abstract: A magnetic recording tape comprising a nonmagnetic support and a magnetic layer containing ferromagnetic powder and a binder, wherein the nonmagnetic support has an intrinsic viscosity of from 0.40 to 0.60 dl/g and a number average molecular weight of from 12,000 to 24,000, and a distance between an apex of a maximum convexity and a valley of a maximum concavity of the nonmagnetic support on a cross section of an edge of the tape made by cutting the tape in a transverse direction is 2 ?m or less in the transverse direction.