Abstract: A semiconductor device test apparatus according to the present invention includes a circuit board 103 and a film 105. A plurality of electrodes 103c are formed at the circuit board 103 at positions that face opposite a plurality of electrodes 201a at a device to be measured 201, whereas bumps 105b are formed at the surface of the film 105 located toward the device to be measured 201, at positions that face opposite the plurality of electrodes 201a at the device to be measured 201 and electrodes 105c are formed at the surface of the film 105 located toward the circuit board 103 at positions that face opposite the plurality of electrodes 103c at the circuit board 103. The bumps 105b formed at one surface of the film 105 and the electrodes 105c formed at another surface of the film 105 are electrically connected with each other via through holes 105d to support semiconductor devices having electrodes provided at a fine pitch and to improve durability.

Abstract: A semiconductor device test apparatus according to the present invention includes a circuit board 103 and a film 105. A plurality of electrodes 103c are formed at the circuit board 103 at positions that face opposite a plurality of electrodes 201a at a device to be measured 201, whereas bumps 105b are formed at the surface of the film 105 located toward the device to be measured 201, at positions that face opposite the plurality of electrodes 201a at the device to be measured 201 and electrodes 105c are formed at the surface of the film 105 located toward the circuit board 103 at positions that face opposite the plurality of electrodes 103c at the circuit board 103. The bumps 105b formed at one surface of the film 105 and the electrodes 105c formed at another surface of the film 105 are electrically connected with each other via through holes 105d to support semiconductor devices having electrodes provided at a fine pitch and to improve durability.

Abstract: A semiconductor device test apparatus according to the present invention includes a circuit board 103 and a film 105. A plurality of electrodes 103c are formed at the circuit board 103 at positions that face opposite a plurality of electrodes 201a at a device to be measured 201, whereas bumps 105b are formed at the surface of the film 105 located toward the device to be measured 201, at positions that face opposite the plurality of electrodes 201a at the device to be measured 201 and electrodes 105c are formed at the surface of the film 105 located toward the circuit board 103 at positions that face opposite the plurality of electrodes 103c at the circuit board 103. The bumps 105b formed at one surface of the film 105 and the electrodes 105c formed at another surface of the film 105 are electrically connected with each other via through holes 105d to support semiconductor devices having electrodes provided at a fine pitch and to improve durability.

Abstract: A semiconductor device test apparatus according to the present invention includes a circuit board 103 and a film 105. A plurality of electrodes 103c are formed at the circuit board 103 at positions that face opposite a plurality of electrodes 201a at a device to be measured 201, whereas bumps 105b are formed at the surface of the film 105 located toward the device to be measured 201, at positions that face opposite the plurality of electrodes 201a at the device to be measured 201 and electrodes 105c are formed at the surface of the film 105 located toward the circuit board 103 at positions that face opposite the plurality of electrodes 103c at the circuit board 103. The bumps 105b formed at one surface of the film 105 and the electrodes 105c formed at another surface of the film 105 are electrically connected with each other via through holes 105d to support semiconductor devices having electrodes provided at a fine pitch and to improve durability.

Abstract: A semiconductor device test apparatus according to the present invention includes a circuit board 103 and a film 105. A plurality of electrodes 103c are formed at the circuit board 103 at positions that face opposite a plurality of electrodes 201a at a device to be measured 201, whereas bumps 105b are formed at the surface of the film 105 located toward the device to be measured 201, at positions that face opposite the plurality of electrodes 201a at the device to be measured 201 and electrodes 105c are formed at the surface of the film 105 located toward the circuit board 103 at positions that face opposite the plurality of electrodes 103c at the circuit board 103. The bumps 105b formed at one surface of the film 105 and the electrodes 105c formed at another surface of the film 105 are electrically connected with each other via through holes 105d to support semiconductor devices having electrodes provided at a fine pitch and to improve durability.

Abstract: A semiconductor device test apparatus (a coupling device thereof) includes a circuit board 103 and film 105. A plurality of electrodes 103c are formed at the circuit board 103 at positions that face opposite a plurality of electrodes 201a at a device to be measured 201, whereas bumps 105b are formed at the surface of the film 105 located toward the device to be measured 201, at positions that face opposite the plurality of electrodes 201a at the device to be measured 201 and electrodes 105c are formed at the surface of the film 105 located toward the circuit board 103 at positions that face opposite the plurality of electrodes 103c at the circuit board 103. The bumps 105b formed at one surface of the film 105 and the electrodes 105c formed at another surface of the film 105 are electrically connected with each other via through holes 105d to support semiconductor devices having electrodes provided at a fine pitch and to improve durability.

Abstract: A semiconductor device test apparatus according to the present invention includes a circuit board 103 and a film 105. A plurality of electrodes 103c are formed at the circuit board 103 at positions that face opposite a plurality of electrodes 201a at a device to be measured 201, whereas bumps 105b are formed at the surface of the film 105 located toward the device to be measured 201, at positions that face opposite the plurality of electrodes 201a at the device to be measured 201 and electrodes 105c are formed at the surface of the film 105 located toward the circuit board 103 at positions that face opposite the plurality of electrodes 103c at the circuit board 103. The bumps 105b formed at one surface of the film 105 and the electrodes 105c formed at another surface of the film 105 are electrically connected with each other via through holes 105d to support semiconductor devices having electrodes provided at a fine pitch and to improve durability.

Abstract: A semiconductor device test apparatus according to the present invention includes a circuit board 103 and a film 105. A plurality of electrodes 103c are formed at the circuit board 103 at positions that face opposite a plurality of electrodes 201a at a device to be measured 201, whereas bumps 105b are formed at the surface of the film 105 located toward the device to be measured 201, at positions that face opposite the plurality of electrodes 201a at the device to be measured 201 and electrodes 105c are formed at the surface of the film 105 located toward the circuit board 103 at positions that face opposite the plurality of electrodes 103c at the circuit board 103. The bumps 105b formed at one surface of the film 105 and the electrode 105c formed at another surface of the film 105 are electrically connected with each other via through holes 105d to support semiconductor devices having electrodes provided at a fine pitch and to improve durability.