Abstract: An aspect of the present invention relates to a resin composition containing a radical polymerizable compound (A), an inorganic filler (B) containing boron nitride (B-1) and silica (B-2), and a free radical compound (C) having at least one free radical group selected from the group consisting of structures represented by Formulas (1), (2), (3) and (4) in the molecule.

Abstract: There is provided a plasma processing method in a plasma processing apparatus including a chamber, a stage on which a substrate is placed in the chamber, a plurality of radiating devices configured to radiate a plurality of electromagnetic waves, and a dielectric window disposed between the plurality of radiating devices and the stage. The method comprises: preparing the substrate on the stage; controlling a phase of at least one of the plurality of electromagnetic waves radiated from the plurality of radiating devices; radiating the plurality of electromagnetic waves into the chamber from the plurality of radiating devices; and processing the substrate using localized plasma generated from a gas supplied between the dielectric window and the stage.

Abstract: A shield member includes a die-cast member and a plating layer provided on a surface of the die-cast member. The die-cast member contains zinc. The plating layer includes a third layer provided in an outermost surface of the plating layer. The third layer is made of pure tin. A thickness of the third layer is less than 5 ?m.

Abstract: Measuring a plasma state using a probe device in the case of performing plasma processing on a substrate by introducing process gas into a processing container accommodating the substrate and by producing pulsed plasma using an electromagnetic wave pulse obtained by processing an electromagnetic wave generated from an electromagnetic wave oscillator using a pulsing device. An AC voltage to the pulsed plasma is applied via the probe device; transmitting a signal from the pulsed plasma based on the AC voltage via the probe device and measuring data including a current value; and obtaining a state of the pulsed plasma by analyzing the measured data. The frequency of the AC voltage deviates from a frequency of the electromagnetic wave pulse so that the number of data required for the measurement of the pulsed plasma within one cycle of the electromagnetic wave pulse is obtained within allowable time.

Abstract: A copper clad laminate includes: an insulating layer containing a cured product of a resin composition; and a surface treated copper foil on one surface or both surfaces of the insulating layer, the resin composition containing a polymer, and the surface treated copper foil including a finely roughened particle treatment layer of copper on at least one surface side of a copper foil, the finely roughened particle treatment layer being formed of fine copper particles having a particle size of 40 to 200 nm, a heat resistance treatment layer containing nickel provided on the finely roughened particle treatment layer, a rust prevention treatment layer containing at least chromium provided on the heat resistance treatment layer, a silane coupling agent layer provided on the rust prevention treatment layer, and an amount of nickel attached in the heat resistance treatment layer being 30 to 60 mg/m2.

Abstract: A plasma processing apparatus includes a control device and configured to plasmarize a gas supplied to an interior of a processing container to perform a plasma processing on an object to be processed, wherein the control device includes: a measurer configured to measure an electron energy distribution function of plasma in the interior of the processing container, and a parameter changer configured to change parameters relating to the plasma processing so that the electron energy distribution function measured by the measurer during the plasma processing approaches a target electron energy distribution function.

Abstract: An aspect of the present invention is a resin composition containing a compound (A) having at least one group represented by the following Formula (1) in a molecule and an acenaphthylene compound (B). In Formula (1), n represents 0 to 10, Z represents an arylene group, and R1 to R3 each independently represent a hydrogen atom or an alkyl group.

Abstract: A prepreg includes: a resin composition or a semi-cured product thereof; and a fibrous base material, wherein the resin composition contains a polymer having a structural unit expressed by the formula (1) in a molecule, and a curing agent each at a predetermined content rate. A cured product of the resin composition has a Dk of 2.6 to 3.8, and the fibrous base material includes a glass cloth having a Dk of 4.7 or less and a Df of 0.0033 or less. A cured product of the prepreg has a Dk of 2.7 to 3.8, and a Df of 0.002 or less. In the formula (1), Z represents an arylene group, R1 to R3 each independently represents a hydrogen atom or an alkyl group, and R4 to R6 each independently represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms.

Abstract: There is provided a plasma processing apparatus including: a chamber having a processing space in which a plasma processing is performed on a substrate and a synthetic space in which electromagnetic waves are synthesized; a dielectric window configured to partition the processing space and the synthetic space; an antenna unit including a plurality of antennas configured to radiate the electromagnetic waves to the synthetic space; an electromagnetic wave output part configured to output the electromagnetic waves to the antenna unit; and a controller configured to control the antenna unit to function as the phased array antenna, wherein the plurality of antennas are helical antennas.

Abstract: A pin terminal includes a bar-like base material and a plating layer covering a predetermined region of the base material. A constituent material of the base material is pure copper or a copper alloy. The plating layer includes a tin-based layer made of metal containing tin. One end side of the base material includes a tip covering portion covering an entire region in a circumferential direction of the base material. The tin-based layer includes the tip covering portion. The tip covering portion includes a thin film portion and a thick film portion at positions different in the circumferential direction of the base material. The thin film portion is provided in contact with the base material. The number of whiskers present on a surface of the thin film portion is 15 or less in a square visual field having one side length of 0.35 mm.

Abstract: A method of controlling a scanning-type plasma processing apparatus using a phased array antenna, includes observing light emission of plasma generated inside a processing container through observation windows provided at multiple positions in the processing container, calculating an in-plane distribution of values representing characteristics of the plasma on a substrate, based on data on the observed light emission of the plasma, and correcting a scanning pattern and/or a plasma density distribution of the plasma based on the calculated in-plane distribution of the values representing the characteristics of the plasma on the substrate.

Abstract: A copper-clad laminate includes an insulating layer formed of a cured product of a resin composition and a surface treated copper foil in contact with the insulating layer, in which the resin composition contains a compound having at least one group specified in the present application and a crosslinking type curing agent; and the surface treated copper foil is a surface treated copper foil including a finely roughened particle treatment layer of copper on at least one surface side of copper foil.

Abstract: One aspect of the present invention is a prepreg including a resin composition or a semi-cured product of the resin composition and a fibrous base material, in which the resin composition contains a modified polyphenylene ether compound terminally modified with a substituent having an unsaturated carbon-carbon double bond, and a crosslinkable curing agent having an unsaturated carbon-carbon double bond in a molecule, the fibrous base material is quartz glass cloth, the prepreg contains a silane coupling agent having an unsaturated carbon-carbon double bond in a molecule, in an amount of 0.01% by mass or more and less than 3% by mass with respect to the prepreg, and a cured product of the prepreg has a dielectric loss tangent of 0.002 or less at 10 GHz.

Abstract: A plasma observation system includes a plasma processing apparatus which includes a processing container in which a substrate is processed with plasma, and a plurality of observation windows each capable of observing an emission state of the plasma in the processing container; and a measuring device including a light receiver configured to receive a plurality of light beams intersecting in the processing container through a plurality of observation windows, and a controller configured to specify an observation point of the plasma and determine a state of the plasma at the observation point based on the plurality of light beams received by the light receiver.

Abstract: A resin composition includes: a polyphenylene ether compound having at least one of groups expressed by formulas (1) and (2), a curing agent reactable with the polyphenylene ether compound, a styrene-based polymer having structural units expressed by formulas (3) and (4); and an inorganic filler containing boron nitride, wherein a content of the inorganic filler is 100 to 320 parts by mass relative to 100 parts by mass of a total of the polyphenylene ether compound, the curing agent, and the styrene-based polymer.

Abstract: A resin composition includes: a polyphenylene ether compound; a curing agent reactable with the polyphenylene ether compound; and an inorganic filler including a boron nitride filler, wherein a particle size distribution of the inorganic filler, which is measured by a laser diffraction-based particle size distribution measuring method, has at least two peaks in a particle diameter range of 0.8 to 30.0 ?m, the peaks including at least one peak in a particle diameter range of 0.8 to 5.0 ?m and at least one peak in a particle diameter range of 5.0 to 30.0 ?m.

Abstract: There is provided a plasma processing apparatus including: a processing container; a first electrode provided inside the processing container and connected to a high-frequency power supply; a second electrode provided inside the processing container to face the first electrode, the second electrode being grounded; and a film thickness calculator connected to at least one of the first electrode and the second electrode and configured to calculate a thickness of a film deposited on the at least one of the first electrode and the second electrode.

Abstract: A plasma probe device includes: an antenna installed in an opening portion formed in a wall of a processing container via a seal member that seals between a vacuum space and an atmospheric space; and a light transmission portion installed inside the antenna or forming at least a portion of the antenna, and configured to transmit emission of plasma generated in the vacuum space to the atmospheric space.

Abstract: A plasma processing apparatus includes a main container, one or more radio frequency antennas, a plurality of metal windows, and a plasma detector. The one or more radio frequency antennas are configured to generate inductively coupled plasma in a plasma generation region in the main container. The metal windows are disposed between the plasma generation region and the radio frequency antennas while being insulated from each other and from the main container. Further, a plasma detector is connected to each of the metal windows and configured to detect a plasma state.

Abstract: Measuring a plasma state using a probe device in the case of performing plasma processing on a substrate by introducing process gas into a processing container accommodating the substrate and by producing pulsed plasma using an electromagnetic wave pulse obtained by processing an electromagnetic wave generated from an electromagnetic wave oscillator using a pulsing device. An AC voltage to the pulsed plasma is applied via the probe device; transmitting a signal from the pulsed plasma based on the AC voltage via the probe device and measuring data including a current value; and obtaining a state of the pulsed plasma by analyzing the measured data. The frequency of the AC voltage deviates from a frequency of the electromagnetic wave pulse so that the number of data required for the measurement of the pulsed plasma within one cycle of the electromagnetic wave pulse is obtained within allowable time.