Abstract: Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure.

Abstract: A piezoelectric element having an improved piezoelectric constant is provided, and a liquid discharge head, an ultrasonic motor, and a dust removing device, each of which uses the above piezoelectric element, are also provided. A piezoelectric element at least includes a pair of electrodes and a piezoelectric material provided in contact with the pair of electrodes, the piezoelectric material is formed of an aggregate of crystal grains containing barium titanate as a primary component, and among the crystal grains of the aggregate, crystal grains at least in contact with the electrodes have dislocation layers in the grains. A liquid discharge head, an ultrasonic motor, and a dust removing device each use the above piezoelectric element.

Abstract: A transistor is constituted of a gate electrode 2, a gate insulation layer 3, a semiconductor layer 4 formed of an amorphous oxide, a source electrode 5, a drain electrode 6 and a protective layer 7. The protective layer 7 is provided on the semiconductor layer 4 in contact with the semiconductor layer 4, and the semiconductor layer 4 includes a first layer at least functioning as a channel layer and a second layer having higher resistance than the first layer. The first layer is provided on the gate electrode 2 side of the semiconductor layer 4 and the second layer is provided on the protective layer 7 side of the semiconductor layer 4.

Abstract: Provided is a piezoelectric material that achieves both high piezoelectric performance and high Curie temperature. In addition, provided are a piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust removing device, which use the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide that is expressed by the following general formula (1): xBaTiO3-yBiFeO3-zBi(M0.5Ti0.5)O3 (1), where M represents at least one type of element selected from the group consisting of Mg and Ni, x satisfies 0.25?x?0.75, y satisfies 0.15?y?0.70, z satisfies 0.05?z?0.60, and x+y+z=1 is satisfied.

Abstract: Provided are a barium titanate-based piezoelectric ceramics having satisfactory piezoelectric performance and a satisfactory mechanical quality factor (Qm), and a piezoelectric element using the same. Specifically provided are a piezoelectric ceramics, including: crystal particles; and a grain boundary between the crystal particles, in which the crystal particles each include barium titanate having a perovskite-type structure and manganese at 0.04% by mass or more and 0.20% by mass or less in terms of a metal with respect to the barium titanate, and the grain boundary includes at least one compound selected from the group consisting of Ba4Ti12O27 and Ba6Ti17O40, and a piezoelectric element using the same.

Abstract: A method of producing a material capable of electrochemically storing and releasing a large amount of lithium ions is provided. The material is used as an electrode material for a negative electrode, and includes silicon or tin primary particles composed of crystal particles each having a specific diameter and an amorphous surface layer formed of at least a metal oxide, having a specific thickness. Gibbs free energy when the metal oxide is produced by oxidation of a metal is smaller than Gibbs free energy when silicon or tin is oxidized, and the metal oxide has higher thermodynamic stability than silicon oxide or tin oxide. The method of producing the electrode material includes reacting silicon or tin with a metal oxide, reacting a silicon oxide or a tin oxide with a metal, or reacting a silicon compound or a tin compound with a metal compound to react with each other.

Abstract: Provided are a piezoelectric thin film having good piezoelectricity in which a rhombohedral structure and a tetragonal structure are mixed, and a piezoelectric element using the piezoelectric thin film. The piezoelectric thin film includes a perovskite type metal oxide, in which the perovskite type metal oxide is a mixed crystal system of at least a rhombohedral structure and a tetragonal structure, and a ratio between an a-axis lattice parameter and a c-axis lattice parameter of the tetragonal structure satisfies 1.15?c/a?1.30. The piezoelectric element includes on a substrate: the above-mentioned piezoelectric thin film; and a pair of electrodes provided in contact with the piezoelectric thin film.

Abstract: A transistor includes a gate electrode, a gate insulating layer, a semiconductor layer including an amorphous oxide, source-drain electrodes, and a protective layer on a substrate. The semiconductor layer includes a first region corresponding to a region in which the source-drain electrodes are formed, and a second region not corresponding to the region in which the source-drain electrodes are formed. At least the first region includes a crystalline component having a composition different from the composition of the amorphous oxide in the second region.

Abstract: A transistor is constituted of a gate electrode 2, a gate insulation layer 3, a semiconductor layer 4 formed of an amorphous oxide, a source electrode 5, a drain electrode 6 and a protective layer 7. The protective layer 7 is provided on the semiconductor layer 4 in contact with the semiconductor layer 4, and the semiconductor layer 4 includes a first layer at least functioning as a channel layer and a second layer having higher resistance than the first layer. The first layer is provided on the gate electrode 2 side of the semiconductor layer 4 and the second layer is provided on the protective layer 7 side of the semiconductor layer 4.

Abstract: Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure.

Abstract: Provided is a ferroelectric thin film formed on a substrate and having an amount of remanent polarization increased in its entirety. The ferroelectric thin film contains a perovskite-type metal oxide formed on a substrate, the ferroelectric thin film containing a column group formed of multiple columns each formed of a spinel-type metal oxide, in which the column group is in a state of standing in a direction perpendicular to a surface of the substrate, or in a state of slanting at a slant angle in a range of ?10° or more to +10° or less with respect to the perpendicular direction.

Abstract: A transistor is constituted of a gate electrode 2, a gate insulation layer 3, a semiconductor layer 4 formed of an amorphous oxide, a source electrode 5, a drain electrode 6 and a protective layer 7. The protective layer 7 is provided on the semiconductor layer 4 in contact with the semiconductor layer 4, and the semiconductor layer 4 includes a first layer at least functioning as a channel layer and a second layer having higher resistance than the first layer. The first layer is provided on the gate electrode 2 side of the semiconductor layer 4 and the second layer is provided on the protective layer 7 side of the semiconductor layer 4.

Abstract: A transistor includes a gate electrode, a gate insulating layer, a semiconductor layer including an amorphous oxide, source-drain electrodes, and a protective layer on a substrate. The semiconductor layer includes a first region corresponding to a region in which the source-drain electrodes are formed, and a second region not corresponding to the region in which the source-drain electrodes are formed. At least the first region includes a crystalline component having a composition different from the composition of the amorphous oxide in the second region.

Abstract: A method of producing a material capable of electrochemically storing and releasing a large amount of lithium ions is provided. The material is used as an electrode material for a negative electrode, and includes silicon or tin primary particles composed of crystal particles each having a specific diameter and an amorphous surface layer formed of at least a metal oxide, having a specific thickness. Gibbs free energy when the metal oxide is produced by oxidation of a metal is smaller than Gibbs free energy when silicon or tin is oxidized, and the metal oxide has higher thermodynamic stability than silicon oxide or tin oxide. The method of producing the electrode material includes reacting silicon or tin with a metal oxide, reacting a silicon oxide or a tin oxide with a metal, or reacting a silicon compound or a tin compound with a metal compound to react with each other.

Abstract: A rearview mirror having an alarm used in a car is disclosed. The rearview mirror comprises a mirror case and a lens. The burglarproofing alarm is disposed in the rearview mirror integrated together with the rearview mirror since a sensor device and an alarm-raising device are communicatively connected to a central control circuit in the mirror case.

Abstract: It is, therefore, an object of the present invention to provide a burglarproofing alarm and particularly a pneumatic pressure burglarproofing alarm in which air pressure is detected to determine if an alarm should be issued. The burglarproofing alarm comprises a body case, a central control circuit, a sensor device and an alarm raising device disposed in the body case.