Abstract: A plurality of finger electrodes are disposed on a surface of a photoelectric conversion layer 60 and extend in a first direction. The plurality of finger electrodes are arranged in a second direction in which an inter-cell wiring member adapted to be disposed on the surface of the photoelectric conversion layer extends. A height of each of those of the plurality of finger electrodes disposed toward ends in the second direction from a part of the photoelectric conversion layer where the inter-cell wiring member is adapted to be disposed is larger than a height of the finger electrode disposed at a center in the second direction from the part of the photoelectric conversion layer where the inter-cell wiring member is adapted to be disposed.

Abstract: A plurality of finger electrodes are disposed on a surface of a photoelectric conversion layer 60 and extend in a first direction. The plurality of finger electrodes are arranged in a second direction in which an inter-cell wiring member adapted to be disposed on the surface of the photoelectric conversion layer extends. A height of each of those of the plurality of finger electrodes disposed toward ends in the second direction from a part of the photoelectric conversion layer where the inter-cell wiring member is adapted to be disposed is larger than a height of the finger electrode disposed at a center in the second direction from the part of the photoelectric conversion layer where the inter-cell wiring member is adapted to be disposed.

Abstract: According to one example of an embodiment of the present invention, a solar cell is provided with an n-type crystalline silicon wafer; a first passivation layer, which is formed on the light receiving surface of the n-type crystalline silicon wafer, and which is configured by having, as a main component, silicon oxide, silicon carbide, or silicon nitride; an n-type crystalline silicon layer formed on the first passivation layer; a second passivation layer formed on the rear surface of the n-type crystalline silicon wafer; and a p-type amorphous silicon layer formed on the second passivation layer.

Abstract: A solar cell and a sealing material provided on a light entering side of the solar cell are included. The solar cell includes a photoelectric conversion body and a fine line-shaped electrode formed on a light receiving surface of the photoelectric conversion body so as to extend in one direction. Additionally, a low-refractive-index layer having a refractive index lower than a refractive index of the sealing material is provided between a light receiving surface of the fine line-shaped electrode and the sealing material so as to cover the light receiving surface of the fine line-shaped electrode. The low-refractive-index layer has an inclined surface whose central portion projects in a cross section of the low-refractive-index layer taken along a different direction perpendicular to the one direction, and the inclined surface is inclined toward the light receiving surface of the photoelectric conversion body.

Abstract: A solar cell module includes high refractivity layers each being formed between a light-receiving surface of a solar cell and a sealing member and having a refractive index higher than that of the sealing member. The high refractivity layers each have a pair of first tilted surfaces provided on a thin wire electrode (a collecting electrode) and tilted relative to the light-receiving surface.

Abstract: In a photovoltaic device comprising a thin intrinsic amorphous semiconductor film inserted in a junction portion of a crystalline semiconductor substrate and an amorphous semiconductor film which have conductive types reverse to each other, an optical band gap of the intrinsic amorphous semiconductor film is expanded on a side in contact with the amorphous semiconductor film.

Abstract: A photovoltaic device having a crystalline semiconductor and an amorphous semiconductor thin film so that junction characteristics can be upgraded. The photovoltaic device includes an i-type amorphous silicon thin film and a p-type amorphous silicon thin layer laminated in this order on a front surface of an n-type single crystalline silicon substrate, and an i-type amorphous silicon layer and an n-type amorphous silicon layer laminated in this order on a rear surface of the single crystalline silicon substrate, wherein an i-type amorphous silicon film is formed after the front surface of the single crystalline silicon substrate is exposed to a plasma discharge using mixed gas of hydrogen gas and a gas containing boron so that atoms of boron may be interposed on an interface between the single crystalline silicon substrate and the i-type amorphous silicon layer.

Abstract: The present invention was made to improve interface characteristics between a crystalline semiconductor and an amorphous semiconductor thin film so that junction characteristics can be upgraded. A manufacturing method of a photovoltaic device comprising an i-type amorphous silicon thin film (12) and a p-type amorphous silicon thin layer (13) laminated in this order on a front surface of an n-type single crystalline silicon substrate (11), and an i-type amorphous silicon layer (14) and an n-type amorphous silicon layer (15) laminated in this order on a rear surface of the single crystalline silicon substrate, wherein an i-type amorphous silicon layer (12) is formed after the front surface of the single crystalline silicon substrate (11) is exposed to a plasma discharge using mixed gas of hydrogen gas and a gas containing boron so that atoms of boron may be interposed on an interface between the single crystalline silicon substrate (11) and the i-type amorphous silicon layer (12).

Abstract: In a photovoltaic device comprising a thin intrinsic amorphous semiconductor film inserted in a junction portion of a crystalline semiconductor substrate and an amorphous semiconductor film which have conductive types reverse to each other, an optical band gap of the intrinsic amorphous semiconductor film is expanded on a side in contact with the amorphous semiconductor film.