Patents by Inventor Mikio Yukawa

Mikio Yukawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170309905
    Abstract: Provided is a method for manufacturing a power storage device in which a crystalline silicon layer including a whisker-like crystalline silicon region is formed as an active material layer over a current collector by a low-pressure CVD method in which heating is performed using a deposition gas containing silicon. The power storage device includes the current collector, a mixed layer formed over the current collector, and the crystalline silicon layer functioning as the active material layer formed over the mixed layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions which project over the crystalline silicon region.
    Type: Application
    Filed: June 16, 2017
    Publication date: October 26, 2017
    Inventors: Kazutaka KURIKI, Mikio YUKAWA, Yuji ASANO
  • Patent number: 9734901
    Abstract: The present invention provides a display device including a nonvolatile memory circuit to which data can be added without increasing the number of manufacturing steps, and an electronic appliance using the display device. A display device of the present invention has a memory circuit that includes a memory element with a simple structure in which an organic compound layer is interposed between a pair of conductive layers. According to the present invention having the above mentioned structure, a display device having a nonvolatile memory circuit to which data can be added can be provided without increasing the number of manufacturing steps.
    Type: Grant
    Filed: October 14, 2005
    Date of Patent: August 15, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuko Watanabe, Yasuyuki Arai, Hiroko Abe, Yuji Iwaki, Mikio Yukawa, Shunpei Yamazaki
  • Patent number: 9685275
    Abstract: Provided is a method for manufacturing a power storage device in which a crystalline silicon layer including a whisker-like crystalline silicon region is formed as an active material layer over a current collector by a low-pressure CVD method in which heating is performed using a deposition gas containing silicon. The power storage device includes the current collector, a mixed layer formed over the current collector, and the crystalline silicon layer functioning as the active material layer formed over the mixed layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions which project over the crystalline silicon region. With the protrusions, the surface area of the crystalline silicon layer functioning as the active material layer can be increased.
    Type: Grant
    Filed: April 18, 2011
    Date of Patent: June 20, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazutaka Kuriki, Mikio Yukawa, Yuji Asano
  • Patent number: 9685277
    Abstract: An electrode which can have an improved performance such as higher discharge capacity and in which deterioration due to peeling of an active material layer or the like is difficult to occur are provided. The electrode includes an active material layer including a first protrusion, a second protrusion and a continuous active material film, a metal oxide layer, and a continuous mixed layer. The first protrusion, the second protrusion and the continuous active material film includes silicon. The metal oxide layer includes oxygen and a metal element which is capable of forming silicide by reacting with silicon. The continuous mixed layer includes silicon and the metal element.
    Type: Grant
    Filed: February 1, 2016
    Date of Patent: June 20, 2017
    Assignee: Semiconductor Energy Laboratory Co., LTD.
    Inventors: Satoshi Murakami, Kazutaka Kuriki, Mikio Yukawa
  • Publication number: 20170054140
    Abstract: To provide a storage battery electrode including an active material layer with high density that contains a smaller percentage of conductive additive. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of the electrode for a storage battery. A slurry that contains an active material and graphene oxide is applied to a current collector and dried to form an active material layer over the current collector, the active material layer over the current collector is rolled up together with a spacer, and a rolled electrode which includes the spacer are immersed in a reducing solution so that graphene oxide is reduced.
    Type: Application
    Filed: November 4, 2016
    Publication date: February 23, 2017
    Inventors: Kenryo NANBA, Mikio YUKAWA
  • Publication number: 20170040590
    Abstract: To provide a method for forming a storage battery electrode including an active material layer with high density in which the proportion of conductive additive is low and the proportion of the active material is high. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of a storage battery electrode formed by the formation method. A method for forming a storage battery electrode includes the steps of forming a mixture including an active material, graphene oxide, and a binder; providing a mixture over a current collector; and immersing the mixture provided over the current collector in a polar solvent containing a reducer, so that the graphene oxide is reduced.
    Type: Application
    Filed: October 24, 2016
    Publication date: February 9, 2017
    Inventor: Mikio YUKAWA
  • Publication number: 20160358977
    Abstract: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.
    Type: Application
    Filed: June 6, 2016
    Publication date: December 8, 2016
    Inventors: Shunpei YAMAZAKI, Hiroko ABE, Yukie NEMOTO, Ryoji NOMURA, Mikio YUKAWA
  • Patent number: 9490472
    Abstract: To provide a storage battery electrode including an active material layer with high density that contains a smaller percentage of conductive additive. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of the electrode for a storage battery. A slurry that contains an active material and graphene oxide is applied to a current collector and dried to form an active material layer over the current collector, the active material layer over the current collector is rolled up together with a spacer, and a rolled electrode which includes the spacer are immersed in a reducing solution so that graphene oxide is reduced.
    Type: Grant
    Filed: March 20, 2014
    Date of Patent: November 8, 2016
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Kenryo Nanba, Mikio Yukawa
  • Patent number: 9478807
    Abstract: To provide a method for forming a storage battery electrode including an active material layer with high density in which the proportion of conductive additive is low and the proportion of the active material is high. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of a storage battery electrode formed by the formation method. A method for forming a storage battery electrode includes the steps of forming a mixture including an active material, graphene oxide, and a binder; providing a mixture over a current collector; and immersing the mixture provided over the current collector in a polar solvent containing a reducer, so that the graphene oxide is reduced.
    Type: Grant
    Filed: December 16, 2015
    Date of Patent: October 25, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Mikio Yukawa
  • Publication number: 20160204440
    Abstract: A graphene oxide used as a raw material of a conductive additive for forming an active material layer with high electron conductivity with a small amount of a conductive additive is provided. A positive electrode for a nonaqueous secondary battery using the graphene oxide as a conductive additive is provided. The graphene oxide is used as a raw material of a conductive additive in a positive electrode for a nonaqueous secondary battery and, in the graphene oxide, the weight ratio of oxygen to carbon is greater than or equal to 0.405.
    Type: Application
    Filed: March 21, 2016
    Publication date: July 14, 2016
    Inventors: Hiroatsu TODORIKI, Mikio YUKAWA, Yumiko SAITO, Masaki YAMAKAJI, Rika YATABE, Tatsuya IKENUMA
  • Publication number: 20160163470
    Abstract: A power storage device which can have an improved performance such as higher discharge capacity and in which deterioration due to peeling of an active material layer or the like is difficult to occur, and a method for manufacturing the power storage device are provided. The power storage device includes a current collector, a mixed layer formed over the current collector, and a crystalline silicon layer which is formed over the mixed layer and functions as an active material layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions projecting over the crystalline silicon region. The whisker-like crystalline silicon region includes a protrusion having a bending or branching portion.
    Type: Application
    Filed: February 1, 2016
    Publication date: June 9, 2016
    Inventors: Satoshi MURAKAMI, Kazutaka KURIKI, Mikio YUKAWA
  • Patent number: 9362339
    Abstract: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.
    Type: Grant
    Filed: February 5, 2015
    Date of Patent: June 7, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hiroko Abe, Yukie Nemoto, Ryoji Nomura, Mikio Yukawa
  • Publication number: 20160104892
    Abstract: To provide a method for forming a storage battery electrode including an active material layer with high density in which the proportion of conductive additive is low and the proportion of the active material is high. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of a storage battery electrode formed by the formation method. A method for forming a storage battery electrode includes the steps of forming a mixture including an active material, graphene oxide, and a binder; providing a mixture over a current collector; and immersing the mixture provided over the current collector in a polar solvent containing a reducer, so that the graphene oxide is reduced.
    Type: Application
    Filed: December 16, 2015
    Publication date: April 14, 2016
    Inventor: Mikio YUKAWA
  • Patent number: 9293770
    Abstract: A graphene oxide used as a raw material of a conductive additive for forming an active material layer with high electron conductivity with a small amount of a conductive additive is provided. A positive electrode for a nonaqueous secondary battery using the graphene oxide as a conductive additive is provided. The graphene oxide is used as a raw material of a conductive additive in a positive electrode for a nonaqueous secondary battery and, in the graphene oxide, the atomic ratio of oxygen to carbon is greater than or equal to 0.405.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: March 22, 2016
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hiroatsu Todoriki, Mikio Yukawa, Yumiko Saito, Masaki Yamakaji, Rika Yatabe, Tatsuya Ikenuma
  • Patent number: 9281134
    Abstract: A power storage device which can have an improved performance such as higher discharge capacity and in which deterioration due to peeling of an active material layer or the like is difficult to occur, and a method for manufacturing the power storage device are provided. The power storage device includes a current collector, a mixed layer formed over the current collector, and a crystalline silicon layer which is formed over the mixed layer and functions as an active material layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions projecting over the crystalline silicon region. The whisker-like crystalline silicon region includes a protrusion having a bending or branching portion.
    Type: Grant
    Filed: May 19, 2011
    Date of Patent: March 8, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Murakami, Kazutaka Kuriki, Mikio Yukawa
  • Patent number: 9225003
    Abstract: To provide a method for forming a storage battery electrode including an active material layer with high density in which the proportion of conductive additive is low and the proportion of the active material is high. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of a storage battery electrode formed by the formation method. A method for forming a storage battery electrode includes the steps of forming a mixture including an active material, graphene oxide, and a binder; providing a mixture over a current collector; and immersing the mixture provided over the current collector in a polar solvent containing a reducer, so that the graphene oxide is reduced.
    Type: Grant
    Filed: June 10, 2013
    Date of Patent: December 29, 2015
    Assignee: Semiconductor Energy Laboratory Co., LTD.
    Inventor: Mikio Yukawa
  • Publication number: 20150303142
    Abstract: A semiconductor substrate provided with an integrated circuit is polished by CMP or the like, and the semiconductor substrate is made into a thin film by forming an embrittlement layer in the semiconductor substrate and separating a part of the semiconductor substrate; thus, semiconductor chips such as IC chips and LSI chips which are thinner than ever are obtained. Moreover, such thinned LSI chips are stacked and electrically connected through wirings penetrating through the semiconductor substrate; thus, a three dimensional semiconductor integrated circuit with improved packing density is obtained.
    Type: Application
    Filed: June 30, 2015
    Publication date: October 22, 2015
    Inventors: Shunpei YAMAZAKI, Mikio YUKAWA
  • Patent number: 9129754
    Abstract: To provide an electrode for a power storage device, which has high reliability and can be miniaturized. To provide a power storage device including the electrode. In the electrode, a stress-relieving layer which relieves internal stress of an active material layer including a whisker is provided over a current collector. By the stress-relieving layer, deformation of the current collector can be suppressed and the productivity of the power storage device can be increased. In addition, the size of the power storage device can be reduced and the reliability thereof can be increased. Graphene may be formed so as to cover the active material layer including a whisker.
    Type: Grant
    Filed: August 29, 2012
    Date of Patent: September 8, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazutaka Kuriki, Mikio Yukawa, Nobuhiro Inoue
  • Publication number: 20150166348
    Abstract: Graphene that is formed from graphene oxide and has high conductivity and a method for forming the graphene are provided. A power storage device with high charge discharge capacity and favorable electric properties such as high reliability and high durability and a method for fabricating the power storage device are provided. Chemical reduction and thermal reduction are performed on graphene oxide in this order to form graphene. In the method for fabricating the power storage device including at least a positive electrode, a negative electrode, an electrolytic solution, and a separator, graphene of one or both of a positive electrode and a negative electrode is formed by the forming method of graphene.
    Type: Application
    Filed: December 11, 2014
    Publication date: June 18, 2015
    Inventors: Tatsuya IKENUMA, Mikio YUKAWA
  • Publication number: 20150144858
    Abstract: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.
    Type: Application
    Filed: February 5, 2015
    Publication date: May 28, 2015
    Inventors: Shunpei YAMAZAKI, Hiroko ABE, Yukie NEMOTO, Ryoji NOMURA, Mikio YUKAWA